Influence of heat treatment on luminescence of semi-insulating undoped GaAs crystals
Abstract Variations in the spectra of edge-emission photoluminescence of semi-insulating undoped GaAs crystals as a result of heat treatment for 20–90 min at 900°C were studied. It is shown that heat treatment substantially affects (transforms) the excitonic component of the spectrum. The observed c...
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2000 |
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| Umfang: |
5 |
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| Reproduktion: |
Springer Online Journal Archives 1860-2002 |
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| Übergeordnetes Werk: |
in: Semiconductors - 1997, 34(2000) vom: Nov., Seite 1259-1263 |
| Übergeordnetes Werk: |
volume:34 ; year:2000 ; month:11 ; pages:1259-1263 ; extent:5 |
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| 520 | |a Abstract Variations in the spectra of edge-emission photoluminescence of semi-insulating undoped GaAs crystals as a result of heat treatment for 20–90 min at 900°C were studied. It is shown that heat treatment substantially affects (transforms) the excitonic component of the spectrum. The observed changes in the spectra are related to variations in the impurity composition of the crystals studied. These variations are shown to be caused by heat treatment. | ||
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| 700 | 1 | |a Glinchuk, K. D. |4 oth | |
| 700 | 1 | |a Litovchenko, N. M. |4 oth | |
| 700 | 1 | |a Prokhorovich, A. V. |4 oth | |
| 700 | 1 | |a Stril’chuk, O. N. |4 oth | |
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(DE-627)NLEJ198788207 DE-627 ger DE-627 rakwb eng Influence of heat treatment on luminescence of semi-insulating undoped GaAs crystals 2000 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Abstract Variations in the spectra of edge-emission photoluminescence of semi-insulating undoped GaAs crystals as a result of heat treatment for 20–90 min at 900°C were studied. It is shown that heat treatment substantially affects (transforms) the excitonic component of the spectrum. The observed changes in the spectra are related to variations in the impurity composition of the crystals studied. These variations are shown to be caused by heat treatment. Springer Online Journal Archives 1860-2002 Glinchuk, K. D. oth Litovchenko, N. M. oth Prokhorovich, A. V. oth Stril’chuk, O. N. oth in Semiconductors 1997 34(2000) vom: Nov., Seite 1259-1263 (DE-627)NLEJ188985646 (DE-600)1473824-7 1063-7826 nnns volume:34 year:2000 month:11 pages:1259-1263 extent:5 http://dx.doi.org/10.1134/1.1325419 GBV_USEFLAG_U ZDB-1-SOJ GBV_NL_ARTICLE AR 34 2000 11 1259-1263 5 |
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(DE-627)NLEJ198788207 DE-627 ger DE-627 rakwb eng Influence of heat treatment on luminescence of semi-insulating undoped GaAs crystals 2000 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Abstract Variations in the spectra of edge-emission photoluminescence of semi-insulating undoped GaAs crystals as a result of heat treatment for 20–90 min at 900°C were studied. It is shown that heat treatment substantially affects (transforms) the excitonic component of the spectrum. The observed changes in the spectra are related to variations in the impurity composition of the crystals studied. These variations are shown to be caused by heat treatment. Springer Online Journal Archives 1860-2002 Glinchuk, K. D. oth Litovchenko, N. M. oth Prokhorovich, A. V. oth Stril’chuk, O. N. oth in Semiconductors 1997 34(2000) vom: Nov., Seite 1259-1263 (DE-627)NLEJ188985646 (DE-600)1473824-7 1063-7826 nnns volume:34 year:2000 month:11 pages:1259-1263 extent:5 http://dx.doi.org/10.1134/1.1325419 GBV_USEFLAG_U ZDB-1-SOJ GBV_NL_ARTICLE AR 34 2000 11 1259-1263 5 |
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(DE-627)NLEJ198788207 DE-627 ger DE-627 rakwb eng Influence of heat treatment on luminescence of semi-insulating undoped GaAs crystals 2000 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Abstract Variations in the spectra of edge-emission photoluminescence of semi-insulating undoped GaAs crystals as a result of heat treatment for 20–90 min at 900°C were studied. It is shown that heat treatment substantially affects (transforms) the excitonic component of the spectrum. The observed changes in the spectra are related to variations in the impurity composition of the crystals studied. These variations are shown to be caused by heat treatment. Springer Online Journal Archives 1860-2002 Glinchuk, K. D. oth Litovchenko, N. M. oth Prokhorovich, A. V. oth Stril’chuk, O. N. oth in Semiconductors 1997 34(2000) vom: Nov., Seite 1259-1263 (DE-627)NLEJ188985646 (DE-600)1473824-7 1063-7826 nnns volume:34 year:2000 month:11 pages:1259-1263 extent:5 http://dx.doi.org/10.1134/1.1325419 GBV_USEFLAG_U ZDB-1-SOJ GBV_NL_ARTICLE AR 34 2000 11 1259-1263 5 |
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(DE-627)NLEJ198788207 DE-627 ger DE-627 rakwb eng Influence of heat treatment on luminescence of semi-insulating undoped GaAs crystals 2000 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Abstract Variations in the spectra of edge-emission photoluminescence of semi-insulating undoped GaAs crystals as a result of heat treatment for 20–90 min at 900°C were studied. It is shown that heat treatment substantially affects (transforms) the excitonic component of the spectrum. The observed changes in the spectra are related to variations in the impurity composition of the crystals studied. These variations are shown to be caused by heat treatment. Springer Online Journal Archives 1860-2002 Glinchuk, K. D. oth Litovchenko, N. M. oth Prokhorovich, A. V. oth Stril’chuk, O. N. oth in Semiconductors 1997 34(2000) vom: Nov., Seite 1259-1263 (DE-627)NLEJ188985646 (DE-600)1473824-7 1063-7826 nnns volume:34 year:2000 month:11 pages:1259-1263 extent:5 http://dx.doi.org/10.1134/1.1325419 GBV_USEFLAG_U ZDB-1-SOJ GBV_NL_ARTICLE AR 34 2000 11 1259-1263 5 |
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(DE-627)NLEJ198788207 DE-627 ger DE-627 rakwb eng Influence of heat treatment on luminescence of semi-insulating undoped GaAs crystals 2000 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Abstract Variations in the spectra of edge-emission photoluminescence of semi-insulating undoped GaAs crystals as a result of heat treatment for 20–90 min at 900°C were studied. It is shown that heat treatment substantially affects (transforms) the excitonic component of the spectrum. The observed changes in the spectra are related to variations in the impurity composition of the crystals studied. These variations are shown to be caused by heat treatment. Springer Online Journal Archives 1860-2002 Glinchuk, K. D. oth Litovchenko, N. M. oth Prokhorovich, A. V. oth Stril’chuk, O. N. oth in Semiconductors 1997 34(2000) vom: Nov., Seite 1259-1263 (DE-627)NLEJ188985646 (DE-600)1473824-7 1063-7826 nnns volume:34 year:2000 month:11 pages:1259-1263 extent:5 http://dx.doi.org/10.1134/1.1325419 GBV_USEFLAG_U ZDB-1-SOJ GBV_NL_ARTICLE AR 34 2000 11 1259-1263 5 |
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influence of heat treatment on luminescence of semi-insulating undoped gaas crystals |
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Influence of heat treatment on luminescence of semi-insulating undoped GaAs crystals |
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Abstract Variations in the spectra of edge-emission photoluminescence of semi-insulating undoped GaAs crystals as a result of heat treatment for 20–90 min at 900°C were studied. It is shown that heat treatment substantially affects (transforms) the excitonic component of the spectrum. The observed changes in the spectra are related to variations in the impurity composition of the crystals studied. These variations are shown to be caused by heat treatment. |
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Abstract Variations in the spectra of edge-emission photoluminescence of semi-insulating undoped GaAs crystals as a result of heat treatment for 20–90 min at 900°C were studied. It is shown that heat treatment substantially affects (transforms) the excitonic component of the spectrum. The observed changes in the spectra are related to variations in the impurity composition of the crystals studied. These variations are shown to be caused by heat treatment. |
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Abstract Variations in the spectra of edge-emission photoluminescence of semi-insulating undoped GaAs crystals as a result of heat treatment for 20–90 min at 900°C were studied. It is shown that heat treatment substantially affects (transforms) the excitonic component of the spectrum. The observed changes in the spectra are related to variations in the impurity composition of the crystals studied. These variations are shown to be caused by heat treatment. |
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