Carbon-stimulated increase in the concentration of gallium divacancies in semi-insulating undoped GaAs crystals
Abstract It is shown that an increase in carbon content in semi-insulating undoped GaAs crystals leads to a substantial rise of the concentration of gallium divacancies in these crystals. This effect seems to be related to the process of carbon atoms occupying the arsenic vacancies involved in the A...
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2000 |
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| Umfang: |
3 |
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| Reproduktion: |
Springer Online Journal Archives 1860-2002 |
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| Übergeordnetes Werk: |
in: Semiconductors - 1997, 34(2000) vom: Mai, Seite 514-516 |
| Übergeordnetes Werk: |
volume:34 ; year:2000 ; month:05 ; pages:514-516 ; extent:3 |
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| 520 | |a Abstract It is shown that an increase in carbon content in semi-insulating undoped GaAs crystals leads to a substantial rise of the concentration of gallium divacancies in these crystals. This effect seems to be related to the process of carbon atoms occupying the arsenic vacancies involved in the As-divacancy-Ga-divacancy complex. | ||
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| 700 | 1 | |a Litovchenko, N. M. |4 oth | |
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| 700 | 1 | |a Stril’chuk, O. N. |4 oth | |
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(DE-627)NLEJ198789246 DE-627 ger DE-627 rakwb eng Carbon-stimulated increase in the concentration of gallium divacancies in semi-insulating undoped GaAs crystals 2000 3 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Abstract It is shown that an increase in carbon content in semi-insulating undoped GaAs crystals leads to a substantial rise of the concentration of gallium divacancies in these crystals. This effect seems to be related to the process of carbon atoms occupying the arsenic vacancies involved in the As-divacancy-Ga-divacancy complex. Springer Online Journal Archives 1860-2002 Glinchuk, K. D. oth Litovchenko, N. M. oth Prokhorovich, A. V. oth Stril’chuk, O. N. oth in Semiconductors 1997 34(2000) vom: Mai, Seite 514-516 (DE-627)NLEJ188985646 (DE-600)1473824-7 1063-7826 nnns volume:34 year:2000 month:05 pages:514-516 extent:3 http://dx.doi.org/10.1134/1.1188017 GBV_USEFLAG_U ZDB-1-SOJ GBV_NL_ARTICLE AR 34 2000 5 514-516 3 |
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(DE-627)NLEJ198789246 DE-627 ger DE-627 rakwb eng Carbon-stimulated increase in the concentration of gallium divacancies in semi-insulating undoped GaAs crystals 2000 3 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Abstract It is shown that an increase in carbon content in semi-insulating undoped GaAs crystals leads to a substantial rise of the concentration of gallium divacancies in these crystals. This effect seems to be related to the process of carbon atoms occupying the arsenic vacancies involved in the As-divacancy-Ga-divacancy complex. Springer Online Journal Archives 1860-2002 Glinchuk, K. D. oth Litovchenko, N. M. oth Prokhorovich, A. V. oth Stril’chuk, O. N. oth in Semiconductors 1997 34(2000) vom: Mai, Seite 514-516 (DE-627)NLEJ188985646 (DE-600)1473824-7 1063-7826 nnns volume:34 year:2000 month:05 pages:514-516 extent:3 http://dx.doi.org/10.1134/1.1188017 GBV_USEFLAG_U ZDB-1-SOJ GBV_NL_ARTICLE AR 34 2000 5 514-516 3 |
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(DE-627)NLEJ198789246 DE-627 ger DE-627 rakwb eng Carbon-stimulated increase in the concentration of gallium divacancies in semi-insulating undoped GaAs crystals 2000 3 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Abstract It is shown that an increase in carbon content in semi-insulating undoped GaAs crystals leads to a substantial rise of the concentration of gallium divacancies in these crystals. This effect seems to be related to the process of carbon atoms occupying the arsenic vacancies involved in the As-divacancy-Ga-divacancy complex. Springer Online Journal Archives 1860-2002 Glinchuk, K. D. oth Litovchenko, N. M. oth Prokhorovich, A. V. oth Stril’chuk, O. N. oth in Semiconductors 1997 34(2000) vom: Mai, Seite 514-516 (DE-627)NLEJ188985646 (DE-600)1473824-7 1063-7826 nnns volume:34 year:2000 month:05 pages:514-516 extent:3 http://dx.doi.org/10.1134/1.1188017 GBV_USEFLAG_U ZDB-1-SOJ GBV_NL_ARTICLE AR 34 2000 5 514-516 3 |
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(DE-627)NLEJ198789246 DE-627 ger DE-627 rakwb eng Carbon-stimulated increase in the concentration of gallium divacancies in semi-insulating undoped GaAs crystals 2000 3 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Abstract It is shown that an increase in carbon content in semi-insulating undoped GaAs crystals leads to a substantial rise of the concentration of gallium divacancies in these crystals. This effect seems to be related to the process of carbon atoms occupying the arsenic vacancies involved in the As-divacancy-Ga-divacancy complex. Springer Online Journal Archives 1860-2002 Glinchuk, K. D. oth Litovchenko, N. M. oth Prokhorovich, A. V. oth Stril’chuk, O. N. oth in Semiconductors 1997 34(2000) vom: Mai, Seite 514-516 (DE-627)NLEJ188985646 (DE-600)1473824-7 1063-7826 nnns volume:34 year:2000 month:05 pages:514-516 extent:3 http://dx.doi.org/10.1134/1.1188017 GBV_USEFLAG_U ZDB-1-SOJ GBV_NL_ARTICLE AR 34 2000 5 514-516 3 |
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(DE-627)NLEJ198789246 DE-627 ger DE-627 rakwb eng Carbon-stimulated increase in the concentration of gallium divacancies in semi-insulating undoped GaAs crystals 2000 3 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Abstract It is shown that an increase in carbon content in semi-insulating undoped GaAs crystals leads to a substantial rise of the concentration of gallium divacancies in these crystals. This effect seems to be related to the process of carbon atoms occupying the arsenic vacancies involved in the As-divacancy-Ga-divacancy complex. Springer Online Journal Archives 1860-2002 Glinchuk, K. D. oth Litovchenko, N. M. oth Prokhorovich, A. V. oth Stril’chuk, O. N. oth in Semiconductors 1997 34(2000) vom: Mai, Seite 514-516 (DE-627)NLEJ188985646 (DE-600)1473824-7 1063-7826 nnns volume:34 year:2000 month:05 pages:514-516 extent:3 http://dx.doi.org/10.1134/1.1188017 GBV_USEFLAG_U ZDB-1-SOJ GBV_NL_ARTICLE AR 34 2000 5 514-516 3 |
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carbon-stimulated increase in the concentration of gallium divacancies in semi-insulating undoped gaas crystals |
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Carbon-stimulated increase in the concentration of gallium divacancies in semi-insulating undoped GaAs crystals |
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Abstract It is shown that an increase in carbon content in semi-insulating undoped GaAs crystals leads to a substantial rise of the concentration of gallium divacancies in these crystals. This effect seems to be related to the process of carbon atoms occupying the arsenic vacancies involved in the As-divacancy-Ga-divacancy complex. |
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Abstract It is shown that an increase in carbon content in semi-insulating undoped GaAs crystals leads to a substantial rise of the concentration of gallium divacancies in these crystals. This effect seems to be related to the process of carbon atoms occupying the arsenic vacancies involved in the As-divacancy-Ga-divacancy complex. |
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Abstract It is shown that an increase in carbon content in semi-insulating undoped GaAs crystals leads to a substantial rise of the concentration of gallium divacancies in these crystals. This effect seems to be related to the process of carbon atoms occupying the arsenic vacancies involved in the As-divacancy-Ga-divacancy complex. |
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Carbon-stimulated increase in the concentration of gallium divacancies in semi-insulating undoped GaAs crystals |
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