Investigation of the properties of a-C:H coatings with graded metal interlayers
Abstract A combined PVD-/CVD-process was used to deposit Al interlayers with mixed interface to a-C:H coatings on Si (100) and steel substrates. The Al interlayers had a typical thickness of 100 nm to 1 µm with a-C:H layers of 0.5 to 3 µm thickness. As a reference some substrates were coated directl...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1999 |
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| Umfang: |
6 |
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| Reproduktion: |
Springer Online Journal Archives 1860-2002 |
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| Übergeordnetes Werk: |
in: Fresenius' journal of analytical chemistry - 1995, 365(1999) vom: Jan./März, Seite 249-254 |
| Übergeordnetes Werk: |
volume:365 ; year:1999 ; month:01/03 ; pages:249-254 ; extent:6 |
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| 520 | |a Abstract A combined PVD-/CVD-process was used to deposit Al interlayers with mixed interface to a-C:H coatings on Si (100) and steel substrates. The Al interlayers had a typical thickness of 100 nm to 1 µm with a-C:H layers of 0.5 to 3 µm thickness. As a reference some substrates were coated directly with a-C:H films. TEM element mappings and SIMS analyses showed that the Al- and C-distributions overlap, indicating the formation of a compositionally graded interlayer. SEM fracture cross sections indicated that delamination of a-C:H coatings with metal interlayer occurs preferently near the substrate metal interface. Using a low bias voltage (lower than –100 V) during the a-C:H deposition leads to a columnar structure of the coating, higher bias voltages lead to coatings with amorphous structure by the fracture cross sections. | ||
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| 700 | 1 | |a Penkalla, H. J. |4 oth | |
| 700 | 1 | |a Rehbach, W. P. |4 oth | |
| 700 | 1 | |a Bolt, H. |4 oth | |
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(DE-627)NLEJ201845830 DE-627 ger DE-627 rakwb eng Investigation of the properties of a-C:H coatings with graded metal interlayers 1999 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Abstract A combined PVD-/CVD-process was used to deposit Al interlayers with mixed interface to a-C:H coatings on Si (100) and steel substrates. The Al interlayers had a typical thickness of 100 nm to 1 µm with a-C:H layers of 0.5 to 3 µm thickness. As a reference some substrates were coated directly with a-C:H films. TEM element mappings and SIMS analyses showed that the Al- and C-distributions overlap, indicating the formation of a compositionally graded interlayer. SEM fracture cross sections indicated that delamination of a-C:H coatings with metal interlayer occurs preferently near the substrate metal interface. Using a low bias voltage (lower than –100 V) during the a-C:H deposition leads to a columnar structure of the coating, higher bias voltages lead to coatings with amorphous structure by the fracture cross sections. Springer Online Journal Archives 1860-2002 Nöthe, M. oth Buuron, A. oth Koch, F. oth Penkalla, H. J. oth Rehbach, W. P. oth Bolt, H. oth in Fresenius' journal of analytical chemistry 1995 365(1999) vom: Jan./März, Seite 249-254 (DE-627)NLEJ18899033X (DE-600)2160093-4 1432-1130 nnns volume:365 year:1999 month:01/03 pages:249-254 extent:6 http://dx.doi.org/10.1007/s002160051482 GBV_USEFLAG_U ZDB-1-SOJ GBV_NL_ARTICLE AR 365 1999 1/3 249-254 6 |
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(DE-627)NLEJ201845830 DE-627 ger DE-627 rakwb eng Investigation of the properties of a-C:H coatings with graded metal interlayers 1999 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Abstract A combined PVD-/CVD-process was used to deposit Al interlayers with mixed interface to a-C:H coatings on Si (100) and steel substrates. The Al interlayers had a typical thickness of 100 nm to 1 µm with a-C:H layers of 0.5 to 3 µm thickness. As a reference some substrates were coated directly with a-C:H films. TEM element mappings and SIMS analyses showed that the Al- and C-distributions overlap, indicating the formation of a compositionally graded interlayer. SEM fracture cross sections indicated that delamination of a-C:H coatings with metal interlayer occurs preferently near the substrate metal interface. Using a low bias voltage (lower than –100 V) during the a-C:H deposition leads to a columnar structure of the coating, higher bias voltages lead to coatings with amorphous structure by the fracture cross sections. Springer Online Journal Archives 1860-2002 Nöthe, M. oth Buuron, A. oth Koch, F. oth Penkalla, H. J. oth Rehbach, W. P. oth Bolt, H. oth in Fresenius' journal of analytical chemistry 1995 365(1999) vom: Jan./März, Seite 249-254 (DE-627)NLEJ18899033X (DE-600)2160093-4 1432-1130 nnns volume:365 year:1999 month:01/03 pages:249-254 extent:6 http://dx.doi.org/10.1007/s002160051482 GBV_USEFLAG_U ZDB-1-SOJ GBV_NL_ARTICLE AR 365 1999 1/3 249-254 6 |
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(DE-627)NLEJ201845830 DE-627 ger DE-627 rakwb eng Investigation of the properties of a-C:H coatings with graded metal interlayers 1999 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Abstract A combined PVD-/CVD-process was used to deposit Al interlayers with mixed interface to a-C:H coatings on Si (100) and steel substrates. The Al interlayers had a typical thickness of 100 nm to 1 µm with a-C:H layers of 0.5 to 3 µm thickness. As a reference some substrates were coated directly with a-C:H films. TEM element mappings and SIMS analyses showed that the Al- and C-distributions overlap, indicating the formation of a compositionally graded interlayer. SEM fracture cross sections indicated that delamination of a-C:H coatings with metal interlayer occurs preferently near the substrate metal interface. Using a low bias voltage (lower than –100 V) during the a-C:H deposition leads to a columnar structure of the coating, higher bias voltages lead to coatings with amorphous structure by the fracture cross sections. Springer Online Journal Archives 1860-2002 Nöthe, M. oth Buuron, A. oth Koch, F. oth Penkalla, H. J. oth Rehbach, W. P. oth Bolt, H. oth in Fresenius' journal of analytical chemistry 1995 365(1999) vom: Jan./März, Seite 249-254 (DE-627)NLEJ18899033X (DE-600)2160093-4 1432-1130 nnns volume:365 year:1999 month:01/03 pages:249-254 extent:6 http://dx.doi.org/10.1007/s002160051482 GBV_USEFLAG_U ZDB-1-SOJ GBV_NL_ARTICLE AR 365 1999 1/3 249-254 6 |
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(DE-627)NLEJ201845830 DE-627 ger DE-627 rakwb eng Investigation of the properties of a-C:H coatings with graded metal interlayers 1999 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Abstract A combined PVD-/CVD-process was used to deposit Al interlayers with mixed interface to a-C:H coatings on Si (100) and steel substrates. The Al interlayers had a typical thickness of 100 nm to 1 µm with a-C:H layers of 0.5 to 3 µm thickness. As a reference some substrates were coated directly with a-C:H films. TEM element mappings and SIMS analyses showed that the Al- and C-distributions overlap, indicating the formation of a compositionally graded interlayer. SEM fracture cross sections indicated that delamination of a-C:H coatings with metal interlayer occurs preferently near the substrate metal interface. Using a low bias voltage (lower than –100 V) during the a-C:H deposition leads to a columnar structure of the coating, higher bias voltages lead to coatings with amorphous structure by the fracture cross sections. Springer Online Journal Archives 1860-2002 Nöthe, M. oth Buuron, A. oth Koch, F. oth Penkalla, H. J. oth Rehbach, W. P. oth Bolt, H. oth in Fresenius' journal of analytical chemistry 1995 365(1999) vom: Jan./März, Seite 249-254 (DE-627)NLEJ18899033X (DE-600)2160093-4 1432-1130 nnns volume:365 year:1999 month:01/03 pages:249-254 extent:6 http://dx.doi.org/10.1007/s002160051482 GBV_USEFLAG_U ZDB-1-SOJ GBV_NL_ARTICLE AR 365 1999 1/3 249-254 6 |
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(DE-627)NLEJ201845830 DE-627 ger DE-627 rakwb eng Investigation of the properties of a-C:H coatings with graded metal interlayers 1999 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Abstract A combined PVD-/CVD-process was used to deposit Al interlayers with mixed interface to a-C:H coatings on Si (100) and steel substrates. The Al interlayers had a typical thickness of 100 nm to 1 µm with a-C:H layers of 0.5 to 3 µm thickness. As a reference some substrates were coated directly with a-C:H films. TEM element mappings and SIMS analyses showed that the Al- and C-distributions overlap, indicating the formation of a compositionally graded interlayer. SEM fracture cross sections indicated that delamination of a-C:H coatings with metal interlayer occurs preferently near the substrate metal interface. Using a low bias voltage (lower than –100 V) during the a-C:H deposition leads to a columnar structure of the coating, higher bias voltages lead to coatings with amorphous structure by the fracture cross sections. Springer Online Journal Archives 1860-2002 Nöthe, M. oth Buuron, A. oth Koch, F. oth Penkalla, H. J. oth Rehbach, W. P. oth Bolt, H. oth in Fresenius' journal of analytical chemistry 1995 365(1999) vom: Jan./März, Seite 249-254 (DE-627)NLEJ18899033X (DE-600)2160093-4 1432-1130 nnns volume:365 year:1999 month:01/03 pages:249-254 extent:6 http://dx.doi.org/10.1007/s002160051482 GBV_USEFLAG_U ZDB-1-SOJ GBV_NL_ARTICLE AR 365 1999 1/3 249-254 6 |
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Investigation of the properties of a-C:H coatings with graded metal interlayers |
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Abstract A combined PVD-/CVD-process was used to deposit Al interlayers with mixed interface to a-C:H coatings on Si (100) and steel substrates. The Al interlayers had a typical thickness of 100 nm to 1 µm with a-C:H layers of 0.5 to 3 µm thickness. As a reference some substrates were coated directly with a-C:H films. TEM element mappings and SIMS analyses showed that the Al- and C-distributions overlap, indicating the formation of a compositionally graded interlayer. SEM fracture cross sections indicated that delamination of a-C:H coatings with metal interlayer occurs preferently near the substrate metal interface. Using a low bias voltage (lower than –100 V) during the a-C:H deposition leads to a columnar structure of the coating, higher bias voltages lead to coatings with amorphous structure by the fracture cross sections. |
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Abstract A combined PVD-/CVD-process was used to deposit Al interlayers with mixed interface to a-C:H coatings on Si (100) and steel substrates. The Al interlayers had a typical thickness of 100 nm to 1 µm with a-C:H layers of 0.5 to 3 µm thickness. As a reference some substrates were coated directly with a-C:H films. TEM element mappings and SIMS analyses showed that the Al- and C-distributions overlap, indicating the formation of a compositionally graded interlayer. SEM fracture cross sections indicated that delamination of a-C:H coatings with metal interlayer occurs preferently near the substrate metal interface. Using a low bias voltage (lower than –100 V) during the a-C:H deposition leads to a columnar structure of the coating, higher bias voltages lead to coatings with amorphous structure by the fracture cross sections. |
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Abstract A combined PVD-/CVD-process was used to deposit Al interlayers with mixed interface to a-C:H coatings on Si (100) and steel substrates. The Al interlayers had a typical thickness of 100 nm to 1 µm with a-C:H layers of 0.5 to 3 µm thickness. As a reference some substrates were coated directly with a-C:H films. TEM element mappings and SIMS analyses showed that the Al- and C-distributions overlap, indicating the formation of a compositionally graded interlayer. SEM fracture cross sections indicated that delamination of a-C:H coatings with metal interlayer occurs preferently near the substrate metal interface. Using a low bias voltage (lower than –100 V) during the a-C:H deposition leads to a columnar structure of the coating, higher bias voltages lead to coatings with amorphous structure by the fracture cross sections. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">NLEJ201845830</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230505192826.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">070527s1999 xx |||||o 00| ||eng c</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)NLEJ201845830</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Investigation of the properties of a-C:H coatings with graded metal interlayers</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1999</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">6</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract A combined PVD-/CVD-process was used to deposit Al interlayers with mixed interface to a-C:H coatings on Si (100) and steel substrates. The Al interlayers had a typical thickness of 100 nm to 1 µm with a-C:H layers of 0.5 to 3 µm thickness. As a reference some substrates were coated directly with a-C:H films. TEM element mappings and SIMS analyses showed that the Al- and C-distributions overlap, indicating the formation of a compositionally graded interlayer. SEM fracture cross sections indicated that delamination of a-C:H coatings with metal interlayer occurs preferently near the substrate metal interface. Using a low bias voltage (lower than –100 V) during the a-C:H deposition leads to a columnar structure of the coating, higher bias voltages lead to coatings with amorphous structure by the fracture cross sections.</subfield></datafield><datafield tag="533" ind1=" " ind2=" "><subfield code="f">Springer Online Journal Archives 1860-2002</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Nöthe, M.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Buuron, A.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Koch, F.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Penkalla, H. J.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Rehbach, W. P.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Bolt, H.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">in</subfield><subfield code="t">Fresenius' journal of analytical chemistry</subfield><subfield code="d">1995</subfield><subfield code="g">365(1999) vom: Jan./März, Seite 249-254</subfield><subfield code="w">(DE-627)NLEJ18899033X</subfield><subfield code="w">(DE-600)2160093-4</subfield><subfield code="x">1432-1130</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:365</subfield><subfield code="g">year:1999</subfield><subfield code="g">month:01/03</subfield><subfield code="g">pages:249-254</subfield><subfield code="g">extent:6</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://dx.doi.org/10.1007/s002160051482</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-1-SOJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_NL_ARTICLE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">365</subfield><subfield code="j">1999</subfield><subfield code="c">1/3</subfield><subfield code="h">249-254</subfield><subfield code="g">6</subfield></datafield></record></collection>
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