The APD Annihilation Mechanism of 3C-SiC Hetero-Epilayer on Si(001) Substrate

Gespeichert in:

Autor*in:	Ishida, Yuuki [verfasserIn] Takahashi, Tetsuo Okumura, Hajime Sekigawa, Toshihiro Yoshida, Sadafumi

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	s.l. Stafa-Zurich, Switzerland: 2000

Anmerkung:	https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.338-342.253
Umfang:	Online-Ressource (4 pages)

Reproduktion:	Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Übergeordnetes Werk:	In: Materials science forum - Uetikon : Trans Tech Publ., 1984, Vol. 338-342 (May 2000), p. 253-256
Übergeordnetes Werk:	volume:338-342 ; year:2000 ; pages:253-256

Links:	Volltext Volltext

DOI / URN:	10.4028/www.scientific.net/MSF.338-342.253

Katalog-ID:	NLEJ23789694X

Internformat


LEADER	01000caa a22002652 4500
001	NLEJ23789694X
003	DE-627
005	20210707043747.0
007	cr uuu---uuuuu
008	120216s2000 xx \|\|\|\|\|o 00\| \|\|eng c
024	7		\|a 10.4028/www.scientific.net/MSF.338-342.253 \|2 doi
035			\|a (DE-627)NLEJ23789694X
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
041			\|a eng
100	1		\|a Ishida, Yuuki \|e verfasserin \|4 aut
245	1	0	\|a The APD Annihilation Mechanism of 3C-SiC Hetero-Epilayer on Si(001) Substrate
264		1	\|a s.l. \|a Stafa-Zurich, Switzerland \|c 2000
300			\|a Online-Ressource (4 pages)
336			\|a nicht spezifiziert \|b zzz \|2 rdacontent
337			\|a nicht spezifiziert \|b z \|2 rdamedia
338			\|a nicht spezifiziert \|b zu \|2 rdacarrier
500			\|a https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.338-342.253
533			\|f Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
700	1		\|a Takahashi, Tetsuo \|4 oth
700	1		\|a Okumura, Hajime \|4 oth
700	1		\|a Sekigawa, Toshihiro \|4 oth
700	1		\|a Yoshida, Sadafumi \|4 oth
773	0	8	\|i In \|t Materials science forum \|d Uetikon : Trans Tech Publ., 1984 \|g Vol. 338-342 (May 2000), p. 253-256 \|h Online-Ressource \|w (DE-627)NLEJ237794969 \|w (DE-600)2047372-2 \|x 1662-9752 \|7 nnns
773	1	8	\|g volume:338-342 \|g year:2000 \|g pages:253-256
856	4	0	\|u https://www.tib.eu/de/openurl/search/?pid=doi:10.4028/www.scientific.net/MSF.338-342.253 \|q text/html \|z Deutschlandweit zugänglich \|3 Volltext
856	4	0	\|u https://doi.org//10.4028/www.scientific.net/MSF.338-342.253 \|q text/html \|z Deutschlandweit zugänglich \|3 Volltext
912			\|a GBV_USEFLAG_U
912			\|a ZDB-1-SNT
912			\|a GBV_NL_ARTICLE
951			\|a AR
952			\|d 338-342 \|j 2000 \|h 253-256 \|y Vol. 338-342 (May 2000), p. 253-256

Indexfelder

author_variant	y i yi
matchkey_str	article:16629752:2000----::hadniiainehnso3sceeoplyr
hierarchy_sort_str	2000
publishDate	2000
allfields	10.4028/www.scientific.net/MSF.338-342.253 doi (DE-627)NLEJ23789694X DE-627 ger DE-627 rakwb eng Ishida, Yuuki verfasserin aut The APD Annihilation Mechanism of 3C-SiC Hetero-Epilayer on Si(001) Substrate s.l. Stafa-Zurich, Switzerland 2000 Online-Ressource (4 pages) nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.338-342.253 Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008 Takahashi, Tetsuo oth Okumura, Hajime oth Sekigawa, Toshihiro oth Yoshida, Sadafumi oth In Materials science forum Uetikon : Trans Tech Publ., 1984 Vol. 338-342 (May 2000), p. 253-256 Online-Ressource (DE-627)NLEJ237794969 (DE-600)2047372-2 1662-9752 nnns volume:338-342 year:2000 pages:253-256 https://www.tib.eu/de/openurl/search/?pid=doi:10.4028/www.scientific.net/MSF.338-342.253 text/html Deutschlandweit zugänglich Volltext https://doi.org//10.4028/www.scientific.net/MSF.338-342.253 text/html Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-SNT GBV_NL_ARTICLE AR 338-342 2000 253-256 Vol. 338-342 (May 2000), p. 253-256
spelling	10.4028/www.scientific.net/MSF.338-342.253 doi (DE-627)NLEJ23789694X DE-627 ger DE-627 rakwb eng Ishida, Yuuki verfasserin aut The APD Annihilation Mechanism of 3C-SiC Hetero-Epilayer on Si(001) Substrate s.l. Stafa-Zurich, Switzerland 2000 Online-Ressource (4 pages) nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.338-342.253 Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008 Takahashi, Tetsuo oth Okumura, Hajime oth Sekigawa, Toshihiro oth Yoshida, Sadafumi oth In Materials science forum Uetikon : Trans Tech Publ., 1984 Vol. 338-342 (May 2000), p. 253-256 Online-Ressource (DE-627)NLEJ237794969 (DE-600)2047372-2 1662-9752 nnns volume:338-342 year:2000 pages:253-256 https://www.tib.eu/de/openurl/search/?pid=doi:10.4028/www.scientific.net/MSF.338-342.253 text/html Deutschlandweit zugänglich Volltext https://doi.org//10.4028/www.scientific.net/MSF.338-342.253 text/html Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-SNT GBV_NL_ARTICLE AR 338-342 2000 253-256 Vol. 338-342 (May 2000), p. 253-256
allfields_unstemmed	10.4028/www.scientific.net/MSF.338-342.253 doi (DE-627)NLEJ23789694X DE-627 ger DE-627 rakwb eng Ishida, Yuuki verfasserin aut The APD Annihilation Mechanism of 3C-SiC Hetero-Epilayer on Si(001) Substrate s.l. Stafa-Zurich, Switzerland 2000 Online-Ressource (4 pages) nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.338-342.253 Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008 Takahashi, Tetsuo oth Okumura, Hajime oth Sekigawa, Toshihiro oth Yoshida, Sadafumi oth In Materials science forum Uetikon : Trans Tech Publ., 1984 Vol. 338-342 (May 2000), p. 253-256 Online-Ressource (DE-627)NLEJ237794969 (DE-600)2047372-2 1662-9752 nnns volume:338-342 year:2000 pages:253-256 https://www.tib.eu/de/openurl/search/?pid=doi:10.4028/www.scientific.net/MSF.338-342.253 text/html Deutschlandweit zugänglich Volltext https://doi.org//10.4028/www.scientific.net/MSF.338-342.253 text/html Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-SNT GBV_NL_ARTICLE AR 338-342 2000 253-256 Vol. 338-342 (May 2000), p. 253-256
allfieldsGer	10.4028/www.scientific.net/MSF.338-342.253 doi (DE-627)NLEJ23789694X DE-627 ger DE-627 rakwb eng Ishida, Yuuki verfasserin aut The APD Annihilation Mechanism of 3C-SiC Hetero-Epilayer on Si(001) Substrate s.l. Stafa-Zurich, Switzerland 2000 Online-Ressource (4 pages) nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.338-342.253 Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008 Takahashi, Tetsuo oth Okumura, Hajime oth Sekigawa, Toshihiro oth Yoshida, Sadafumi oth In Materials science forum Uetikon : Trans Tech Publ., 1984 Vol. 338-342 (May 2000), p. 253-256 Online-Ressource (DE-627)NLEJ237794969 (DE-600)2047372-2 1662-9752 nnns volume:338-342 year:2000 pages:253-256 https://www.tib.eu/de/openurl/search/?pid=doi:10.4028/www.scientific.net/MSF.338-342.253 text/html Deutschlandweit zugänglich Volltext https://doi.org//10.4028/www.scientific.net/MSF.338-342.253 text/html Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-SNT GBV_NL_ARTICLE AR 338-342 2000 253-256 Vol. 338-342 (May 2000), p. 253-256
allfieldsSound	10.4028/www.scientific.net/MSF.338-342.253 doi (DE-627)NLEJ23789694X DE-627 ger DE-627 rakwb eng Ishida, Yuuki verfasserin aut The APD Annihilation Mechanism of 3C-SiC Hetero-Epilayer on Si(001) Substrate s.l. Stafa-Zurich, Switzerland 2000 Online-Ressource (4 pages) nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.338-342.253 Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008 Takahashi, Tetsuo oth Okumura, Hajime oth Sekigawa, Toshihiro oth Yoshida, Sadafumi oth In Materials science forum Uetikon : Trans Tech Publ., 1984 Vol. 338-342 (May 2000), p. 253-256 Online-Ressource (DE-627)NLEJ237794969 (DE-600)2047372-2 1662-9752 nnns volume:338-342 year:2000 pages:253-256 https://www.tib.eu/de/openurl/search/?pid=doi:10.4028/www.scientific.net/MSF.338-342.253 text/html Deutschlandweit zugänglich Volltext https://doi.org//10.4028/www.scientific.net/MSF.338-342.253 text/html Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-SNT GBV_NL_ARTICLE AR 338-342 2000 253-256 Vol. 338-342 (May 2000), p. 253-256
language	English
source	In Materials science forum Vol. 338-342 (May 2000), p. 253-256 volume:338-342 year:2000 pages:253-256
sourceStr	In Materials science forum Vol. 338-342 (May 2000), p. 253-256 volume:338-342 year:2000 pages:253-256
format_phy_str_mv	Article
institution	findex.gbv.de
isfreeaccess_bool	false
container_title	Materials science forum
authorswithroles_txt_mv	Ishida, Yuuki @@aut@@ Takahashi, Tetsuo @@oth@@ Okumura, Hajime @@oth@@ Sekigawa, Toshihiro @@oth@@ Yoshida, Sadafumi @@oth@@
publishDateDaySort_date	2000-01-01T00:00:00Z
hierarchy_top_id	NLEJ237794969
id	NLEJ23789694X
language_de	englisch
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">NLEJ23789694X</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20210707043747.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">120216s2000 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.4028/www.scientific.net/MSF.338-342.253</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)NLEJ23789694X</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Ishida, Yuuki</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">The APD Annihilation Mechanism of 3C-SiC Hetero-Epilayer on Si(001) Substrate</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">s.l.</subfield><subfield code="a">Stafa-Zurich, Switzerland</subfield><subfield code="c">2000</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">Online-Ressource (4 pages)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.338-342.253</subfield></datafield><datafield tag="533" ind1=" " ind2=" "><subfield code="f">Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Takahashi, Tetsuo</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Okumura, Hajime</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sekigawa, Toshihiro</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yoshida, Sadafumi</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">Materials science forum</subfield><subfield code="d">Uetikon : Trans Tech Publ., 1984</subfield><subfield code="g">Vol. 338-342 (May 2000), p. 253-256</subfield><subfield code="h">Online-Ressource</subfield><subfield code="w">(DE-627)NLEJ237794969</subfield><subfield code="w">(DE-600)2047372-2</subfield><subfield code="x">1662-9752</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:338-342</subfield><subfield code="g">year:2000</subfield><subfield code="g">pages:253-256</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://www.tib.eu/de/openurl/search/?pid=doi:10.4028/www.scientific.net/MSF.338-342.253</subfield><subfield code="q">text/html</subfield><subfield code="z">Deutschlandweit zugänglich</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org//10.4028/www.scientific.net/MSF.338-342.253</subfield><subfield code="q">text/html</subfield><subfield code="z">Deutschlandweit zugänglich</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-1-SNT</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_NL_ARTICLE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">338-342</subfield><subfield code="j">2000</subfield><subfield code="h">253-256</subfield><subfield code="y">Vol. 338-342 (May 2000), p. 253-256</subfield></datafield></record></collection>
series2	Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
author	Ishida, Yuuki
spellingShingle	Ishida, Yuuki The APD Annihilation Mechanism of 3C-SiC Hetero-Epilayer on Si(001) Substrate
authorStr	Ishida, Yuuki
ppnlink_with_tag_str_mv	@@773@@(DE-627)NLEJ237794969
format	electronic Article
delete_txt_mv	keep
author_role	aut
collection	NL
publishPlace	s.l. Stafa-Zurich, Switzerland
remote_str	true
illustrated	Not Illustrated
issn	1662-9752
topic_title	The APD Annihilation Mechanism of 3C-SiC Hetero-Epilayer on Si(001) Substrate
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	zu
author2_variant	t t tt h o ho t s ts s y sy
hierarchy_parent_title	Materials science forum
hierarchy_parent_id	NLEJ237794969
hierarchy_top_title	Materials science forum
isfreeaccess_txt	false
familylinks_str_mv	(DE-627)NLEJ237794969 (DE-600)2047372-2
title	The APD Annihilation Mechanism of 3C-SiC Hetero-Epilayer on Si(001) Substrate
ctrlnum	(DE-627)NLEJ23789694X
title_full	The APD Annihilation Mechanism of 3C-SiC Hetero-Epilayer on Si(001) Substrate
author_sort	Ishida, Yuuki
journal	Materials science forum
journalStr	Materials science forum
lang_code	eng
isOA_bool	false
recordtype	marc
publishDateSort	2000
contenttype_str_mv	zzz
container_start_page	253
author_browse	Ishida, Yuuki
container_volume	338-342
physical	Online-Ressource (4 pages)
format_se	Elektronische Aufsätze
author-letter	Ishida, Yuuki
doi_str_mv	10.4028/www.scientific.net/MSF.338-342.253
title_sort	the apd annihilation mechanism of 3c-sic hetero-epilayer on si(001) substrate
title_auth	The APD Annihilation Mechanism of 3C-SiC Hetero-Epilayer on Si(001) Substrate
abstract	https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.338-342.253
abstractGer	https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.338-342.253
abstract_unstemmed	https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.338-342.253
collection_details	GBV_USEFLAG_U ZDB-1-SNT GBV_NL_ARTICLE
title_short	The APD Annihilation Mechanism of 3C-SiC Hetero-Epilayer on Si(001) Substrate
url	https://www.tib.eu/de/openurl/search/?pid=doi:10.4028/www.scientific.net/MSF.338-342.253 https://doi.org//10.4028/www.scientific.net/MSF.338-342.253
remote_bool	true
author2	Takahashi, Tetsuo Okumura, Hajime Sekigawa, Toshihiro Yoshida, Sadafumi
author2Str	Takahashi, Tetsuo Okumura, Hajime Sekigawa, Toshihiro Yoshida, Sadafumi
ppnlink	NLEJ237794969
mediatype_str_mv	z
isOA_txt	false
hochschulschrift_bool	false
author2_role	oth oth oth oth
doi_str	10.4028/www.scientific.net/MSF.338-342.253
up_date	2024-07-06T03:09:36.498Z
_version_	1803797530146766848
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">NLEJ23789694X</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20210707043747.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">120216s2000 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.4028/www.scientific.net/MSF.338-342.253</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)NLEJ23789694X</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Ishida, Yuuki</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">The APD Annihilation Mechanism of 3C-SiC Hetero-Epilayer on Si(001) Substrate</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">s.l.</subfield><subfield code="a">Stafa-Zurich, Switzerland</subfield><subfield code="c">2000</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">Online-Ressource (4 pages)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.338-342.253</subfield></datafield><datafield tag="533" ind1=" " ind2=" "><subfield code="f">Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Takahashi, Tetsuo</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Okumura, Hajime</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sekigawa, Toshihiro</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yoshida, Sadafumi</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">Materials science forum</subfield><subfield code="d">Uetikon : Trans Tech Publ., 1984</subfield><subfield code="g">Vol. 338-342 (May 2000), p. 253-256</subfield><subfield code="h">Online-Ressource</subfield><subfield code="w">(DE-627)NLEJ237794969</subfield><subfield code="w">(DE-600)2047372-2</subfield><subfield code="x">1662-9752</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:338-342</subfield><subfield code="g">year:2000</subfield><subfield code="g">pages:253-256</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://www.tib.eu/de/openurl/search/?pid=doi:10.4028/www.scientific.net/MSF.338-342.253</subfield><subfield code="q">text/html</subfield><subfield code="z">Deutschlandweit zugänglich</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org//10.4028/www.scientific.net/MSF.338-342.253</subfield><subfield code="q">text/html</subfield><subfield code="z">Deutschlandweit zugänglich</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-1-SNT</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_NL_ARTICLE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">338-342</subfield><subfield code="j">2000</subfield><subfield code="h">253-256</subfield><subfield code="y">Vol. 338-342 (May 2000), p. 253-256</subfield></datafield></record></collection>
score	7.402936

Nicht das Richtige dabei?

Schreiben Sie uns!

The APD Annihilation Mechanism of 3C-SiC Hetero-Epilayer on Si(001) Substrate

Nicht das Richtige dabei?

Zugang & Verfügbarkeit

Vorhandene Bände

Nicht das Richtige dabei?