Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition

Gespeichert in:

Autor*in:	Nishio, Johji [verfasserIn] Kushibe, Mitsuhiro Masahara, Koh Kojima, Kazutoshi Ohno, Toshiyuki Ishida, Yuuki Takahashi, Tetsuo Suzuki, Takaya Tanaka, Tomoyuki Yoshida, Sadafumi Arai, Kazuo

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	s.l. Stafa-Zurich, Switzerland: 2002

Anmerkung:	https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.389-393.215
Umfang:	Online-Ressource (4 pages)

Reproduktion:	Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Übergeordnetes Werk:	In: Materials science forum - Uetikon : Trans Tech Publ., 1984, Vol. 389-393 (Apr. 2002), p. 215-218
Übergeordnetes Werk:	volume:389-393 ; year:2002 ; pages:215-218

Links:	Volltext Volltext

DOI / URN:	10.4028/www.scientific.net/MSF.389-393.215

Katalog-ID:	NLEJ237919702

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allfields	10.4028/www.scientific.net/MSF.389-393.215 doi (DE-627)NLEJ237919702 DE-627 ger DE-627 rakwb eng Nishio, Johji verfasserin aut Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition s.l. Stafa-Zurich, Switzerland 2002 Online-Ressource (4 pages) nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.389-393.215 Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008 Kushibe, Mitsuhiro oth Masahara, Koh oth Kojima, Kazutoshi oth Ohno, Toshiyuki oth Ishida, Yuuki oth Takahashi, Tetsuo oth Suzuki, Takaya oth Tanaka, Tomoyuki oth Yoshida, Sadafumi oth Arai, Kazuo oth In Materials science forum Uetikon : Trans Tech Publ., 1984 Vol. 389-393 (Apr. 2002), p. 215-218 Online-Ressource (DE-627)NLEJ237794969 (DE-600)2047372-2 1662-9752 nnns volume:389-393 year:2002 pages:215-218 https://www.tib.eu/de/openurl/search/?pid=doi:10.4028/www.scientific.net/MSF.389-393.215 text/html Deutschlandweit zugänglich Volltext https://doi.org//10.4028/www.scientific.net/MSF.389-393.215 text/html Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-SNT GBV_NL_ARTICLE AR 389-393 2002 215-218 Vol. 389-393 (Apr. 2002), p. 215-218
spelling	10.4028/www.scientific.net/MSF.389-393.215 doi (DE-627)NLEJ237919702 DE-627 ger DE-627 rakwb eng Nishio, Johji verfasserin aut Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition s.l. Stafa-Zurich, Switzerland 2002 Online-Ressource (4 pages) nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.389-393.215 Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008 Kushibe, Mitsuhiro oth Masahara, Koh oth Kojima, Kazutoshi oth Ohno, Toshiyuki oth Ishida, Yuuki oth Takahashi, Tetsuo oth Suzuki, Takaya oth Tanaka, Tomoyuki oth Yoshida, Sadafumi oth Arai, Kazuo oth In Materials science forum Uetikon : Trans Tech Publ., 1984 Vol. 389-393 (Apr. 2002), p. 215-218 Online-Ressource (DE-627)NLEJ237794969 (DE-600)2047372-2 1662-9752 nnns volume:389-393 year:2002 pages:215-218 https://www.tib.eu/de/openurl/search/?pid=doi:10.4028/www.scientific.net/MSF.389-393.215 text/html Deutschlandweit zugänglich Volltext https://doi.org//10.4028/www.scientific.net/MSF.389-393.215 text/html Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-SNT GBV_NL_ARTICLE AR 389-393 2002 215-218 Vol. 389-393 (Apr. 2002), p. 215-218
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allfieldsGer	10.4028/www.scientific.net/MSF.389-393.215 doi (DE-627)NLEJ237919702 DE-627 ger DE-627 rakwb eng Nishio, Johji verfasserin aut Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition s.l. Stafa-Zurich, Switzerland 2002 Online-Ressource (4 pages) nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.389-393.215 Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008 Kushibe, Mitsuhiro oth Masahara, Koh oth Kojima, Kazutoshi oth Ohno, Toshiyuki oth Ishida, Yuuki oth Takahashi, Tetsuo oth Suzuki, Takaya oth Tanaka, Tomoyuki oth Yoshida, Sadafumi oth Arai, Kazuo oth In Materials science forum Uetikon : Trans Tech Publ., 1984 Vol. 389-393 (Apr. 2002), p. 215-218 Online-Ressource (DE-627)NLEJ237794969 (DE-600)2047372-2 1662-9752 nnns volume:389-393 year:2002 pages:215-218 https://www.tib.eu/de/openurl/search/?pid=doi:10.4028/www.scientific.net/MSF.389-393.215 text/html Deutschlandweit zugänglich Volltext https://doi.org//10.4028/www.scientific.net/MSF.389-393.215 text/html Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-SNT GBV_NL_ARTICLE AR 389-393 2002 215-218 Vol. 389-393 (Apr. 2002), p. 215-218
allfieldsSound	10.4028/www.scientific.net/MSF.389-393.215 doi (DE-627)NLEJ237919702 DE-627 ger DE-627 rakwb eng Nishio, Johji verfasserin aut Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition s.l. Stafa-Zurich, Switzerland 2002 Online-Ressource (4 pages) nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.389-393.215 Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008 Kushibe, Mitsuhiro oth Masahara, Koh oth Kojima, Kazutoshi oth Ohno, Toshiyuki oth Ishida, Yuuki oth Takahashi, Tetsuo oth Suzuki, Takaya oth Tanaka, Tomoyuki oth Yoshida, Sadafumi oth Arai, Kazuo oth In Materials science forum Uetikon : Trans Tech Publ., 1984 Vol. 389-393 (Apr. 2002), p. 215-218 Online-Ressource (DE-627)NLEJ237794969 (DE-600)2047372-2 1662-9752 nnns volume:389-393 year:2002 pages:215-218 https://www.tib.eu/de/openurl/search/?pid=doi:10.4028/www.scientific.net/MSF.389-393.215 text/html Deutschlandweit zugänglich Volltext https://doi.org//10.4028/www.scientific.net/MSF.389-393.215 text/html Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-SNT GBV_NL_ARTICLE AR 389-393 2002 215-218 Vol. 389-393 (Apr. 2002), p. 215-218
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title_auth	Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition
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title_short	Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition
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Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition

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