Effective Normal Field Dependence of Inversion Channel Mobility in 4H-SiC MOSFETs on the (11-20) Face
Autor*in: |
Senzaki, Junji [verfasserIn] |
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Format: |
E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
s.l. Stafa-Zurich, Switzerland: 2003 |
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Anmerkung: |
https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.433-436.613 |
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Umfang: |
Online-Ressource (4 pages) |
Reproduktion: |
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008 |
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Übergeordnetes Werk: |
In: Materials science forum - Uetikon : Trans Tech Publ., 1984, Vol. 433-436 (Sept. 2003), p. 613-616 |
Übergeordnetes Werk: |
volume:433-436 ; year:2003 ; pages:613-616 |
Links: |
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DOI / URN: |
10.4028/www.scientific.net/MSF.433-436.613 |
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10.4028/www.scientific.net/MSF.433-436.613 doi (DE-627)NLEJ23794667X DE-627 ger DE-627 rakwb eng Senzaki, Junji verfasserin aut Effective Normal Field Dependence of Inversion Channel Mobility in 4H-SiC MOSFETs on the (11-20) Face s.l. Stafa-Zurich, Switzerland 2003 Online-Ressource (4 pages) nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.433-436.613 Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008 Kojima, Kazutoshi oth Suzuki, Takaya oth Fukuda, Kenji oth In Materials science forum Uetikon : Trans Tech Publ., 1984 Vol. 433-436 (Sept. 2003), p. 613-616 Online-Ressource (DE-627)NLEJ237794969 (DE-600)2047372-2 1662-9752 nnns volume:433-436 year:2003 pages:613-616 https://www.tib.eu/de/openurl/search/?pid=doi:10.4028/www.scientific.net/MSF.433-436.613 text/html Deutschlandweit zugänglich Volltext https://doi.org//10.4028/www.scientific.net/MSF.433-436.613 text/html Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-SNT GBV_NL_ARTICLE AR 433-436 2003 613-616 Vol. 433-436 (Sept. 2003), p. 613-616 |
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10.4028/www.scientific.net/MSF.433-436.613 doi (DE-627)NLEJ23794667X DE-627 ger DE-627 rakwb eng Senzaki, Junji verfasserin aut Effective Normal Field Dependence of Inversion Channel Mobility in 4H-SiC MOSFETs on the (11-20) Face s.l. Stafa-Zurich, Switzerland 2003 Online-Ressource (4 pages) nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.433-436.613 Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008 Kojima, Kazutoshi oth Suzuki, Takaya oth Fukuda, Kenji oth In Materials science forum Uetikon : Trans Tech Publ., 1984 Vol. 433-436 (Sept. 2003), p. 613-616 Online-Ressource (DE-627)NLEJ237794969 (DE-600)2047372-2 1662-9752 nnns volume:433-436 year:2003 pages:613-616 https://www.tib.eu/de/openurl/search/?pid=doi:10.4028/www.scientific.net/MSF.433-436.613 text/html Deutschlandweit zugänglich Volltext https://doi.org//10.4028/www.scientific.net/MSF.433-436.613 text/html Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-SNT GBV_NL_ARTICLE AR 433-436 2003 613-616 Vol. 433-436 (Sept. 2003), p. 613-616 |
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10.4028/www.scientific.net/MSF.433-436.613 doi (DE-627)NLEJ23794667X DE-627 ger DE-627 rakwb eng Senzaki, Junji verfasserin aut Effective Normal Field Dependence of Inversion Channel Mobility in 4H-SiC MOSFETs on the (11-20) Face s.l. Stafa-Zurich, Switzerland 2003 Online-Ressource (4 pages) nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.433-436.613 Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008 Kojima, Kazutoshi oth Suzuki, Takaya oth Fukuda, Kenji oth In Materials science forum Uetikon : Trans Tech Publ., 1984 Vol. 433-436 (Sept. 2003), p. 613-616 Online-Ressource (DE-627)NLEJ237794969 (DE-600)2047372-2 1662-9752 nnns volume:433-436 year:2003 pages:613-616 https://www.tib.eu/de/openurl/search/?pid=doi:10.4028/www.scientific.net/MSF.433-436.613 text/html Deutschlandweit zugänglich Volltext https://doi.org//10.4028/www.scientific.net/MSF.433-436.613 text/html Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-SNT GBV_NL_ARTICLE AR 433-436 2003 613-616 Vol. 433-436 (Sept. 2003), p. 613-616 |
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10.4028/www.scientific.net/MSF.433-436.613 doi (DE-627)NLEJ23794667X DE-627 ger DE-627 rakwb eng Senzaki, Junji verfasserin aut Effective Normal Field Dependence of Inversion Channel Mobility in 4H-SiC MOSFETs on the (11-20) Face s.l. Stafa-Zurich, Switzerland 2003 Online-Ressource (4 pages) nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.433-436.613 Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008 Kojima, Kazutoshi oth Suzuki, Takaya oth Fukuda, Kenji oth In Materials science forum Uetikon : Trans Tech Publ., 1984 Vol. 433-436 (Sept. 2003), p. 613-616 Online-Ressource (DE-627)NLEJ237794969 (DE-600)2047372-2 1662-9752 nnns volume:433-436 year:2003 pages:613-616 https://www.tib.eu/de/openurl/search/?pid=doi:10.4028/www.scientific.net/MSF.433-436.613 text/html Deutschlandweit zugänglich Volltext https://doi.org//10.4028/www.scientific.net/MSF.433-436.613 text/html Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-SNT GBV_NL_ARTICLE AR 433-436 2003 613-616 Vol. 433-436 (Sept. 2003), p. 613-616 |
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10.4028/www.scientific.net/MSF.433-436.613 doi (DE-627)NLEJ23794667X DE-627 ger DE-627 rakwb eng Senzaki, Junji verfasserin aut Effective Normal Field Dependence of Inversion Channel Mobility in 4H-SiC MOSFETs on the (11-20) Face s.l. Stafa-Zurich, Switzerland 2003 Online-Ressource (4 pages) nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.433-436.613 Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008 Kojima, Kazutoshi oth Suzuki, Takaya oth Fukuda, Kenji oth In Materials science forum Uetikon : Trans Tech Publ., 1984 Vol. 433-436 (Sept. 2003), p. 613-616 Online-Ressource (DE-627)NLEJ237794969 (DE-600)2047372-2 1662-9752 nnns volume:433-436 year:2003 pages:613-616 https://www.tib.eu/de/openurl/search/?pid=doi:10.4028/www.scientific.net/MSF.433-436.613 text/html Deutschlandweit zugänglich Volltext https://doi.org//10.4028/www.scientific.net/MSF.433-436.613 text/html Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-SNT GBV_NL_ARTICLE AR 433-436 2003 613-616 Vol. 433-436 (Sept. 2003), p. 613-616 |
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effective normal field dependence of inversion channel mobility in 4h-sic mosfets on the (11-20) face |
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Effective Normal Field Dependence of Inversion Channel Mobility in 4H-SiC MOSFETs on the (11-20) Face |
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