4H-SiC MOSFETs on C(000-,1) Face with Inversion Channel Mobility of 127cm<sup>2</sup>/Vs
Autor*in: |
Fukuda, Kenji [verfasserIn] |
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Format: |
E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
s.l. Stafa-Zurich, Switzerland: 2004 |
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Anmerkung: |
https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.457-460.1417 |
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Umfang: |
Online-Ressource (4 pages) |
Reproduktion: |
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008 |
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Übergeordnetes Werk: |
In: Materials science forum - Uetikon : Trans Tech Publ., 1984, Vol. 457-460 (June 2004), p. 1417-1420 |
Übergeordnetes Werk: |
volume:457-460 ; year:2004 ; pages:1417-1420 |
Links: |
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DOI / URN: |
10.4028/www.scientific.net/MSF.457-460.1417 |
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NLEJ237963515 |
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