Fabrication of Pressure Sensors with Diaphragm by Electro-Chemical Etch-Stop
A diaphragm, the most important part of pressure sensor, was successfully fabricated by an electro-chemical etch-stop (ECES) technique. It was important to control the thickness of the diaphragm precisely. We compared characteristic results of diaphragms by electro-chemical etch-stop with those by t...
Ausführliche Beschreibung
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| Autor*in: |
Lee, J.H. [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
s.l. Stafa-Zurich, Switzerland: 2005 |
|---|
| Anmerkung: |
https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.475-479.1853 |
|---|---|
| Umfang: |
Online-Ressource (4 pages) |
| Reproduktion: |
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008 |
|---|---|
| Übergeordnetes Werk: |
In: Materials science forum - Uetikon : Trans Tech Publ., 1984, Vol. 475-479 (Jan. 2005), p. 1853-1856 |
| Übergeordnetes Werk: |
volume:475-479 ; year:2005 ; pages:1853-1856 |
| Links: |
|---|
| DOI / URN: |
10.4028/www.scientific.net/MSF.475-479.1853 |
|---|
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NLEJ237975572 |
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| 520 | |a A diaphragm, the most important part of pressure sensor, was successfully fabricated by an electro-chemical etch-stop (ECES) technique. It was important to control the thickness of the diaphragm precisely. We compared characteristic results of diaphragms by electro-chemical etch-stop with those by time-control etch-stop (TCES). The 4 inch n-Epi/p-substrate with 16±1 ㎛ thickness was utilized because the thickness of the diaphragm fabricated by ECES is controlled by the thickness of Epi.. The etching of silicon wafer was carried out in the solution (25 wt% KOH) at 80℃, using 3 electrode system with potentiostat. Proper voltages were applied to etch p/n-type silicon wafer after determined open circuit potential (OCP) and passivation potential (PP) of n and p-type silicon, respectively. Thickness of diaphragms fabricated by ECES was controlled in the range of 16±1 ㎛while that by TCES was in the range of 16.1±2 ㎛. The roughness of diaphragm was 52±5 Å. When the pressure of 50 kPa was applied on the pressure sensor using the diaphragm fabricated by ECES, the error rate was improved to ±10 ㎷. In the case of the error rate of pressure sensor using the diaphragm fabricated by TC was in the range of ±25 ㎷ under the same condition | ||
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| 700 | 1 | |a Kim, Chang Joo |4 oth | |
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10.4028/www.scientific.net/MSF.475-479.1853 doi (DE-627)NLEJ237975572 DE-627 ger DE-627 rakwb eng Lee, J.H. verfasserin aut Fabrication of Pressure Sensors with Diaphragm by Electro-Chemical Etch-Stop s.l. Stafa-Zurich, Switzerland 2005 Online-Ressource (4 pages) nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.475-479.1853 A diaphragm, the most important part of pressure sensor, was successfully fabricated by an electro-chemical etch-stop (ECES) technique. It was important to control the thickness of the diaphragm precisely. We compared characteristic results of diaphragms by electro-chemical etch-stop with those by time-control etch-stop (TCES). The 4 inch n-Epi/p-substrate with 16±1 ㎛ thickness was utilized because the thickness of the diaphragm fabricated by ECES is controlled by the thickness of Epi.. The etching of silicon wafer was carried out in the solution (25 wt% KOH) at 80℃, using 3 electrode system with potentiostat. Proper voltages were applied to etch p/n-type silicon wafer after determined open circuit potential (OCP) and passivation potential (PP) of n and p-type silicon, respectively. Thickness of diaphragms fabricated by ECES was controlled in the range of 16±1 ㎛while that by TCES was in the range of 16.1±2 ㎛. The roughness of diaphragm was 52±5 Å. When the pressure of 50 kPa was applied on the pressure sensor using the diaphragm fabricated by ECES, the error rate was improved to ±10 ㎷. In the case of the error rate of pressure sensor using the diaphragm fabricated by TC was in the range of ±25 ㎷ under the same condition Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008 Oh, D.H. oth Lee, G.J. oth Joo, S.C. oth Yang, B. oth Kim, S.J. oth Kim, Chang Joo oth In Materials science forum Uetikon : Trans Tech Publ., 1984 Vol. 475-479 (Jan. 2005), p. 1853-1856 Online-Ressource (DE-627)NLEJ237794969 (DE-600)2047372-2 1662-9752 nnns volume:475-479 year:2005 pages:1853-1856 https://www.tib.eu/de/openurl/search/?pid=doi:10.4028/www.scientific.net/MSF.475-479.1853 text/html Deutschlandweit zugänglich Volltext https://doi.org//10.4028/www.scientific.net/MSF.475-479.1853 text/html Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-SNT GBV_NL_ARTICLE AR 475-479 2005 1853-1856 Vol. 475-479 (Jan. 2005), p. 1853-1856 |
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10.4028/www.scientific.net/MSF.475-479.1853 doi (DE-627)NLEJ237975572 DE-627 ger DE-627 rakwb eng Lee, J.H. verfasserin aut Fabrication of Pressure Sensors with Diaphragm by Electro-Chemical Etch-Stop s.l. Stafa-Zurich, Switzerland 2005 Online-Ressource (4 pages) nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.475-479.1853 A diaphragm, the most important part of pressure sensor, was successfully fabricated by an electro-chemical etch-stop (ECES) technique. It was important to control the thickness of the diaphragm precisely. We compared characteristic results of diaphragms by electro-chemical etch-stop with those by time-control etch-stop (TCES). The 4 inch n-Epi/p-substrate with 16±1 ㎛ thickness was utilized because the thickness of the diaphragm fabricated by ECES is controlled by the thickness of Epi.. The etching of silicon wafer was carried out in the solution (25 wt% KOH) at 80℃, using 3 electrode system with potentiostat. Proper voltages were applied to etch p/n-type silicon wafer after determined open circuit potential (OCP) and passivation potential (PP) of n and p-type silicon, respectively. Thickness of diaphragms fabricated by ECES was controlled in the range of 16±1 ㎛while that by TCES was in the range of 16.1±2 ㎛. The roughness of diaphragm was 52±5 Å. When the pressure of 50 kPa was applied on the pressure sensor using the diaphragm fabricated by ECES, the error rate was improved to ±10 ㎷. In the case of the error rate of pressure sensor using the diaphragm fabricated by TC was in the range of ±25 ㎷ under the same condition Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008 Oh, D.H. oth Lee, G.J. oth Joo, S.C. oth Yang, B. oth Kim, S.J. oth Kim, Chang Joo oth In Materials science forum Uetikon : Trans Tech Publ., 1984 Vol. 475-479 (Jan. 2005), p. 1853-1856 Online-Ressource (DE-627)NLEJ237794969 (DE-600)2047372-2 1662-9752 nnns volume:475-479 year:2005 pages:1853-1856 https://www.tib.eu/de/openurl/search/?pid=doi:10.4028/www.scientific.net/MSF.475-479.1853 text/html Deutschlandweit zugänglich Volltext https://doi.org//10.4028/www.scientific.net/MSF.475-479.1853 text/html Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-SNT GBV_NL_ARTICLE AR 475-479 2005 1853-1856 Vol. 475-479 (Jan. 2005), p. 1853-1856 |
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10.4028/www.scientific.net/MSF.475-479.1853 doi (DE-627)NLEJ237975572 DE-627 ger DE-627 rakwb eng Lee, J.H. verfasserin aut Fabrication of Pressure Sensors with Diaphragm by Electro-Chemical Etch-Stop s.l. Stafa-Zurich, Switzerland 2005 Online-Ressource (4 pages) nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.475-479.1853 A diaphragm, the most important part of pressure sensor, was successfully fabricated by an electro-chemical etch-stop (ECES) technique. It was important to control the thickness of the diaphragm precisely. We compared characteristic results of diaphragms by electro-chemical etch-stop with those by time-control etch-stop (TCES). The 4 inch n-Epi/p-substrate with 16±1 ㎛ thickness was utilized because the thickness of the diaphragm fabricated by ECES is controlled by the thickness of Epi.. The etching of silicon wafer was carried out in the solution (25 wt% KOH) at 80℃, using 3 electrode system with potentiostat. Proper voltages were applied to etch p/n-type silicon wafer after determined open circuit potential (OCP) and passivation potential (PP) of n and p-type silicon, respectively. Thickness of diaphragms fabricated by ECES was controlled in the range of 16±1 ㎛while that by TCES was in the range of 16.1±2 ㎛. The roughness of diaphragm was 52±5 Å. When the pressure of 50 kPa was applied on the pressure sensor using the diaphragm fabricated by ECES, the error rate was improved to ±10 ㎷. In the case of the error rate of pressure sensor using the diaphragm fabricated by TC was in the range of ±25 ㎷ under the same condition Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008 Oh, D.H. oth Lee, G.J. oth Joo, S.C. oth Yang, B. oth Kim, S.J. oth Kim, Chang Joo oth In Materials science forum Uetikon : Trans Tech Publ., 1984 Vol. 475-479 (Jan. 2005), p. 1853-1856 Online-Ressource (DE-627)NLEJ237794969 (DE-600)2047372-2 1662-9752 nnns volume:475-479 year:2005 pages:1853-1856 https://www.tib.eu/de/openurl/search/?pid=doi:10.4028/www.scientific.net/MSF.475-479.1853 text/html Deutschlandweit zugänglich Volltext https://doi.org//10.4028/www.scientific.net/MSF.475-479.1853 text/html Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-SNT GBV_NL_ARTICLE AR 475-479 2005 1853-1856 Vol. 475-479 (Jan. 2005), p. 1853-1856 |
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10.4028/www.scientific.net/MSF.475-479.1853 doi (DE-627)NLEJ237975572 DE-627 ger DE-627 rakwb eng Lee, J.H. verfasserin aut Fabrication of Pressure Sensors with Diaphragm by Electro-Chemical Etch-Stop s.l. Stafa-Zurich, Switzerland 2005 Online-Ressource (4 pages) nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.475-479.1853 A diaphragm, the most important part of pressure sensor, was successfully fabricated by an electro-chemical etch-stop (ECES) technique. It was important to control the thickness of the diaphragm precisely. We compared characteristic results of diaphragms by electro-chemical etch-stop with those by time-control etch-stop (TCES). The 4 inch n-Epi/p-substrate with 16±1 ㎛ thickness was utilized because the thickness of the diaphragm fabricated by ECES is controlled by the thickness of Epi.. The etching of silicon wafer was carried out in the solution (25 wt% KOH) at 80℃, using 3 electrode system with potentiostat. Proper voltages were applied to etch p/n-type silicon wafer after determined open circuit potential (OCP) and passivation potential (PP) of n and p-type silicon, respectively. Thickness of diaphragms fabricated by ECES was controlled in the range of 16±1 ㎛while that by TCES was in the range of 16.1±2 ㎛. The roughness of diaphragm was 52±5 Å. When the pressure of 50 kPa was applied on the pressure sensor using the diaphragm fabricated by ECES, the error rate was improved to ±10 ㎷. In the case of the error rate of pressure sensor using the diaphragm fabricated by TC was in the range of ±25 ㎷ under the same condition Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008 Oh, D.H. oth Lee, G.J. oth Joo, S.C. oth Yang, B. oth Kim, S.J. oth Kim, Chang Joo oth In Materials science forum Uetikon : Trans Tech Publ., 1984 Vol. 475-479 (Jan. 2005), p. 1853-1856 Online-Ressource (DE-627)NLEJ237794969 (DE-600)2047372-2 1662-9752 nnns volume:475-479 year:2005 pages:1853-1856 https://www.tib.eu/de/openurl/search/?pid=doi:10.4028/www.scientific.net/MSF.475-479.1853 text/html Deutschlandweit zugänglich Volltext https://doi.org//10.4028/www.scientific.net/MSF.475-479.1853 text/html Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-SNT GBV_NL_ARTICLE AR 475-479 2005 1853-1856 Vol. 475-479 (Jan. 2005), p. 1853-1856 |
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10.4028/www.scientific.net/MSF.475-479.1853 doi (DE-627)NLEJ237975572 DE-627 ger DE-627 rakwb eng Lee, J.H. verfasserin aut Fabrication of Pressure Sensors with Diaphragm by Electro-Chemical Etch-Stop s.l. Stafa-Zurich, Switzerland 2005 Online-Ressource (4 pages) nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.475-479.1853 A diaphragm, the most important part of pressure sensor, was successfully fabricated by an electro-chemical etch-stop (ECES) technique. It was important to control the thickness of the diaphragm precisely. We compared characteristic results of diaphragms by electro-chemical etch-stop with those by time-control etch-stop (TCES). The 4 inch n-Epi/p-substrate with 16±1 ㎛ thickness was utilized because the thickness of the diaphragm fabricated by ECES is controlled by the thickness of Epi.. The etching of silicon wafer was carried out in the solution (25 wt% KOH) at 80℃, using 3 electrode system with potentiostat. Proper voltages were applied to etch p/n-type silicon wafer after determined open circuit potential (OCP) and passivation potential (PP) of n and p-type silicon, respectively. Thickness of diaphragms fabricated by ECES was controlled in the range of 16±1 ㎛while that by TCES was in the range of 16.1±2 ㎛. The roughness of diaphragm was 52±5 Å. When the pressure of 50 kPa was applied on the pressure sensor using the diaphragm fabricated by ECES, the error rate was improved to ±10 ㎷. In the case of the error rate of pressure sensor using the diaphragm fabricated by TC was in the range of ±25 ㎷ under the same condition Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008 Oh, D.H. oth Lee, G.J. oth Joo, S.C. oth Yang, B. oth Kim, S.J. oth Kim, Chang Joo oth In Materials science forum Uetikon : Trans Tech Publ., 1984 Vol. 475-479 (Jan. 2005), p. 1853-1856 Online-Ressource (DE-627)NLEJ237794969 (DE-600)2047372-2 1662-9752 nnns volume:475-479 year:2005 pages:1853-1856 https://www.tib.eu/de/openurl/search/?pid=doi:10.4028/www.scientific.net/MSF.475-479.1853 text/html Deutschlandweit zugänglich Volltext https://doi.org//10.4028/www.scientific.net/MSF.475-479.1853 text/html Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-SNT GBV_NL_ARTICLE AR 475-479 2005 1853-1856 Vol. 475-479 (Jan. 2005), p. 1853-1856 |
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Lee, J.H. |
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Lee, J.H. Fabrication of Pressure Sensors with Diaphragm by Electro-Chemical Etch-Stop |
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Fabrication of Pressure Sensors with Diaphragm by Electro-Chemical Etch-Stop |
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Fabrication of Pressure Sensors with Diaphragm by Electro-Chemical Etch-Stop |
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Fabrication of Pressure Sensors with Diaphragm by Electro-Chemical Etch-Stop |
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Lee, J.H. |
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Lee, J.H. |
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10.4028/www.scientific.net/MSF.475-479.1853 |
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fabrication of pressure sensors with diaphragm by electro-chemical etch-stop |
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Fabrication of Pressure Sensors with Diaphragm by Electro-Chemical Etch-Stop |
| abstract |
A diaphragm, the most important part of pressure sensor, was successfully fabricated by an electro-chemical etch-stop (ECES) technique. It was important to control the thickness of the diaphragm precisely. We compared characteristic results of diaphragms by electro-chemical etch-stop with those by time-control etch-stop (TCES). The 4 inch n-Epi/p-substrate with 16±1 ㎛ thickness was utilized because the thickness of the diaphragm fabricated by ECES is controlled by the thickness of Epi.. The etching of silicon wafer was carried out in the solution (25 wt% KOH) at 80℃, using 3 electrode system with potentiostat. Proper voltages were applied to etch p/n-type silicon wafer after determined open circuit potential (OCP) and passivation potential (PP) of n and p-type silicon, respectively. Thickness of diaphragms fabricated by ECES was controlled in the range of 16±1 ㎛while that by TCES was in the range of 16.1±2 ㎛. The roughness of diaphragm was 52±5 Å. When the pressure of 50 kPa was applied on the pressure sensor using the diaphragm fabricated by ECES, the error rate was improved to ±10 ㎷. In the case of the error rate of pressure sensor using the diaphragm fabricated by TC was in the range of ±25 ㎷ under the same condition https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.475-479.1853 |
| abstractGer |
A diaphragm, the most important part of pressure sensor, was successfully fabricated by an electro-chemical etch-stop (ECES) technique. It was important to control the thickness of the diaphragm precisely. We compared characteristic results of diaphragms by electro-chemical etch-stop with those by time-control etch-stop (TCES). The 4 inch n-Epi/p-substrate with 16±1 ㎛ thickness was utilized because the thickness of the diaphragm fabricated by ECES is controlled by the thickness of Epi.. The etching of silicon wafer was carried out in the solution (25 wt% KOH) at 80℃, using 3 electrode system with potentiostat. Proper voltages were applied to etch p/n-type silicon wafer after determined open circuit potential (OCP) and passivation potential (PP) of n and p-type silicon, respectively. Thickness of diaphragms fabricated by ECES was controlled in the range of 16±1 ㎛while that by TCES was in the range of 16.1±2 ㎛. The roughness of diaphragm was 52±5 Å. When the pressure of 50 kPa was applied on the pressure sensor using the diaphragm fabricated by ECES, the error rate was improved to ±10 ㎷. In the case of the error rate of pressure sensor using the diaphragm fabricated by TC was in the range of ±25 ㎷ under the same condition https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.475-479.1853 |
| abstract_unstemmed |
A diaphragm, the most important part of pressure sensor, was successfully fabricated by an electro-chemical etch-stop (ECES) technique. It was important to control the thickness of the diaphragm precisely. We compared characteristic results of diaphragms by electro-chemical etch-stop with those by time-control etch-stop (TCES). The 4 inch n-Epi/p-substrate with 16±1 ㎛ thickness was utilized because the thickness of the diaphragm fabricated by ECES is controlled by the thickness of Epi.. The etching of silicon wafer was carried out in the solution (25 wt% KOH) at 80℃, using 3 electrode system with potentiostat. Proper voltages were applied to etch p/n-type silicon wafer after determined open circuit potential (OCP) and passivation potential (PP) of n and p-type silicon, respectively. Thickness of diaphragms fabricated by ECES was controlled in the range of 16±1 ㎛while that by TCES was in the range of 16.1±2 ㎛. The roughness of diaphragm was 52±5 Å. When the pressure of 50 kPa was applied on the pressure sensor using the diaphragm fabricated by ECES, the error rate was improved to ±10 ㎷. In the case of the error rate of pressure sensor using the diaphragm fabricated by TC was in the range of ±25 ㎷ under the same condition https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.475-479.1853 |
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Fabrication of Pressure Sensors with Diaphragm by Electro-Chemical Etch-Stop |
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Oh, D.H. Lee, G.J. Joo, S.C. Yang, B. Kim, S.J. Kim, Chang Joo |
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