Characterization of SiC Wafers by Photoluminescence Mapping
The effectiveness of room-temperature photoluminescence (PL) mapping wasdemonstrated for nondestructive detection of structural defects, such as dislocations, micropipes andstacking faults, in SiC wafers. PL spectra of bulk wafers were dominated by deep-level emissionsdue to Si vacancies, vanadium a...
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| Autor*in: |
Tajima, Michio [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
s.l. Stafa-Zurich, Switzerland: 2006 |
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| Anmerkung: |
https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.711 |
|---|---|
| Umfang: |
Online-Ressource (6 pages) |
| Reproduktion: |
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008 |
|---|---|
| Übergeordnetes Werk: |
In: Materials science forum - Uetikon : Trans Tech Publ., 1984, Vol. 527-529 (Oct. 2006), p. 711-716 |
| Übergeordnetes Werk: |
volume:527-529 ; year:2006 ; pages:711-716 |
| Links: |
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| DOI / URN: |
10.4028/www.scientific.net/MSF.527-529.711 |
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| 520 | |a The effectiveness of room-temperature photoluminescence (PL) mapping wasdemonstrated for nondestructive detection of structural defects, such as dislocations, micropipes andstacking faults, in SiC wafers. PL spectra of bulk wafers were dominated by deep-level emissionsdue to Si vacancies, vanadium and undefined centers like UD-1 at room temperature, while thosefrom epitaxial wafers involved near band-edge emission. We developed a whole-wafer PL intensitymapping system with a capability of zooming in on the area of interest with a spatial resolution ashigh as 1 μm, and showed that the mapping patterns agree well with the etch-pit patterns originatingfrom the structural defects both on a wafer scale and on a microscopic scale. The intensity contrastaround the defects varied depending on the emission band, suggesting differences in their interactionswith impurities and point defects | ||
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10.4028/www.scientific.net/MSF.527-529.711 doi (DE-627)NLEJ238021300 DE-627 ger DE-627 rakwb eng Tajima, Michio verfasserin aut Characterization of SiC Wafers by Photoluminescence Mapping s.l. Stafa-Zurich, Switzerland 2006 Online-Ressource (6 pages) nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.711 The effectiveness of room-temperature photoluminescence (PL) mapping wasdemonstrated for nondestructive detection of structural defects, such as dislocations, micropipes andstacking faults, in SiC wafers. PL spectra of bulk wafers were dominated by deep-level emissionsdue to Si vacancies, vanadium and undefined centers like UD-1 at room temperature, while thosefrom epitaxial wafers involved near band-edge emission. We developed a whole-wafer PL intensitymapping system with a capability of zooming in on the area of interest with a spatial resolution ashigh as 1 μm, and showed that the mapping patterns agree well with the etch-pit patterns originatingfrom the structural defects both on a wafer scale and on a microscopic scale. The intensity contrastaround the defects varied depending on the emission band, suggesting differences in their interactionswith impurities and point defects Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008 Higashi, E. oth Hayashi, Toshihiko oth Kinoshita, Hiroyuki oth Shiomi, Hiromu oth In Materials science forum Uetikon : Trans Tech Publ., 1984 Vol. 527-529 (Oct. 2006), p. 711-716 Online-Ressource (DE-627)NLEJ237794969 (DE-600)2047372-2 1662-9752 nnns volume:527-529 year:2006 pages:711-716 https://www.tib.eu/de/openurl/search/?pid=doi:10.4028/www.scientific.net/MSF.527-529.711 text/html Deutschlandweit zugänglich Volltext https://doi.org//10.4028/www.scientific.net/MSF.527-529.711 text/html Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-SNT GBV_NL_ARTICLE AR 527-529 2006 711-716 Vol. 527-529 (Oct. 2006), p. 711-716 |
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10.4028/www.scientific.net/MSF.527-529.711 doi (DE-627)NLEJ238021300 DE-627 ger DE-627 rakwb eng Tajima, Michio verfasserin aut Characterization of SiC Wafers by Photoluminescence Mapping s.l. Stafa-Zurich, Switzerland 2006 Online-Ressource (6 pages) nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.711 The effectiveness of room-temperature photoluminescence (PL) mapping wasdemonstrated for nondestructive detection of structural defects, such as dislocations, micropipes andstacking faults, in SiC wafers. PL spectra of bulk wafers were dominated by deep-level emissionsdue to Si vacancies, vanadium and undefined centers like UD-1 at room temperature, while thosefrom epitaxial wafers involved near band-edge emission. We developed a whole-wafer PL intensitymapping system with a capability of zooming in on the area of interest with a spatial resolution ashigh as 1 μm, and showed that the mapping patterns agree well with the etch-pit patterns originatingfrom the structural defects both on a wafer scale and on a microscopic scale. The intensity contrastaround the defects varied depending on the emission band, suggesting differences in their interactionswith impurities and point defects Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008 Higashi, E. oth Hayashi, Toshihiko oth Kinoshita, Hiroyuki oth Shiomi, Hiromu oth In Materials science forum Uetikon : Trans Tech Publ., 1984 Vol. 527-529 (Oct. 2006), p. 711-716 Online-Ressource (DE-627)NLEJ237794969 (DE-600)2047372-2 1662-9752 nnns volume:527-529 year:2006 pages:711-716 https://www.tib.eu/de/openurl/search/?pid=doi:10.4028/www.scientific.net/MSF.527-529.711 text/html Deutschlandweit zugänglich Volltext https://doi.org//10.4028/www.scientific.net/MSF.527-529.711 text/html Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-SNT GBV_NL_ARTICLE AR 527-529 2006 711-716 Vol. 527-529 (Oct. 2006), p. 711-716 |
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10.4028/www.scientific.net/MSF.527-529.711 doi (DE-627)NLEJ238021300 DE-627 ger DE-627 rakwb eng Tajima, Michio verfasserin aut Characterization of SiC Wafers by Photoluminescence Mapping s.l. Stafa-Zurich, Switzerland 2006 Online-Ressource (6 pages) nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.711 The effectiveness of room-temperature photoluminescence (PL) mapping wasdemonstrated for nondestructive detection of structural defects, such as dislocations, micropipes andstacking faults, in SiC wafers. PL spectra of bulk wafers were dominated by deep-level emissionsdue to Si vacancies, vanadium and undefined centers like UD-1 at room temperature, while thosefrom epitaxial wafers involved near band-edge emission. We developed a whole-wafer PL intensitymapping system with a capability of zooming in on the area of interest with a spatial resolution ashigh as 1 μm, and showed that the mapping patterns agree well with the etch-pit patterns originatingfrom the structural defects both on a wafer scale and on a microscopic scale. The intensity contrastaround the defects varied depending on the emission band, suggesting differences in their interactionswith impurities and point defects Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008 Higashi, E. oth Hayashi, Toshihiko oth Kinoshita, Hiroyuki oth Shiomi, Hiromu oth In Materials science forum Uetikon : Trans Tech Publ., 1984 Vol. 527-529 (Oct. 2006), p. 711-716 Online-Ressource (DE-627)NLEJ237794969 (DE-600)2047372-2 1662-9752 nnns volume:527-529 year:2006 pages:711-716 https://www.tib.eu/de/openurl/search/?pid=doi:10.4028/www.scientific.net/MSF.527-529.711 text/html Deutschlandweit zugänglich Volltext https://doi.org//10.4028/www.scientific.net/MSF.527-529.711 text/html Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-SNT GBV_NL_ARTICLE AR 527-529 2006 711-716 Vol. 527-529 (Oct. 2006), p. 711-716 |
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10.4028/www.scientific.net/MSF.527-529.711 doi (DE-627)NLEJ238021300 DE-627 ger DE-627 rakwb eng Tajima, Michio verfasserin aut Characterization of SiC Wafers by Photoluminescence Mapping s.l. Stafa-Zurich, Switzerland 2006 Online-Ressource (6 pages) nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.711 The effectiveness of room-temperature photoluminescence (PL) mapping wasdemonstrated for nondestructive detection of structural defects, such as dislocations, micropipes andstacking faults, in SiC wafers. PL spectra of bulk wafers were dominated by deep-level emissionsdue to Si vacancies, vanadium and undefined centers like UD-1 at room temperature, while thosefrom epitaxial wafers involved near band-edge emission. We developed a whole-wafer PL intensitymapping system with a capability of zooming in on the area of interest with a spatial resolution ashigh as 1 μm, and showed that the mapping patterns agree well with the etch-pit patterns originatingfrom the structural defects both on a wafer scale and on a microscopic scale. The intensity contrastaround the defects varied depending on the emission band, suggesting differences in their interactionswith impurities and point defects Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008 Higashi, E. oth Hayashi, Toshihiko oth Kinoshita, Hiroyuki oth Shiomi, Hiromu oth In Materials science forum Uetikon : Trans Tech Publ., 1984 Vol. 527-529 (Oct. 2006), p. 711-716 Online-Ressource (DE-627)NLEJ237794969 (DE-600)2047372-2 1662-9752 nnns volume:527-529 year:2006 pages:711-716 https://www.tib.eu/de/openurl/search/?pid=doi:10.4028/www.scientific.net/MSF.527-529.711 text/html Deutschlandweit zugänglich Volltext https://doi.org//10.4028/www.scientific.net/MSF.527-529.711 text/html Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-SNT GBV_NL_ARTICLE AR 527-529 2006 711-716 Vol. 527-529 (Oct. 2006), p. 711-716 |
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10.4028/www.scientific.net/MSF.527-529.711 doi (DE-627)NLEJ238021300 DE-627 ger DE-627 rakwb eng Tajima, Michio verfasserin aut Characterization of SiC Wafers by Photoluminescence Mapping s.l. Stafa-Zurich, Switzerland 2006 Online-Ressource (6 pages) nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.711 The effectiveness of room-temperature photoluminescence (PL) mapping wasdemonstrated for nondestructive detection of structural defects, such as dislocations, micropipes andstacking faults, in SiC wafers. PL spectra of bulk wafers were dominated by deep-level emissionsdue to Si vacancies, vanadium and undefined centers like UD-1 at room temperature, while thosefrom epitaxial wafers involved near band-edge emission. We developed a whole-wafer PL intensitymapping system with a capability of zooming in on the area of interest with a spatial resolution ashigh as 1 μm, and showed that the mapping patterns agree well with the etch-pit patterns originatingfrom the structural defects both on a wafer scale and on a microscopic scale. The intensity contrastaround the defects varied depending on the emission band, suggesting differences in their interactionswith impurities and point defects Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008 Higashi, E. oth Hayashi, Toshihiko oth Kinoshita, Hiroyuki oth Shiomi, Hiromu oth In Materials science forum Uetikon : Trans Tech Publ., 1984 Vol. 527-529 (Oct. 2006), p. 711-716 Online-Ressource (DE-627)NLEJ237794969 (DE-600)2047372-2 1662-9752 nnns volume:527-529 year:2006 pages:711-716 https://www.tib.eu/de/openurl/search/?pid=doi:10.4028/www.scientific.net/MSF.527-529.711 text/html Deutschlandweit zugänglich Volltext https://doi.org//10.4028/www.scientific.net/MSF.527-529.711 text/html Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-SNT GBV_NL_ARTICLE AR 527-529 2006 711-716 Vol. 527-529 (Oct. 2006), p. 711-716 |
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characterization of sic wafers by photoluminescence mapping |
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Characterization of SiC Wafers by Photoluminescence Mapping |
| abstract |
The effectiveness of room-temperature photoluminescence (PL) mapping wasdemonstrated for nondestructive detection of structural defects, such as dislocations, micropipes andstacking faults, in SiC wafers. PL spectra of bulk wafers were dominated by deep-level emissionsdue to Si vacancies, vanadium and undefined centers like UD-1 at room temperature, while thosefrom epitaxial wafers involved near band-edge emission. We developed a whole-wafer PL intensitymapping system with a capability of zooming in on the area of interest with a spatial resolution ashigh as 1 μm, and showed that the mapping patterns agree well with the etch-pit patterns originatingfrom the structural defects both on a wafer scale and on a microscopic scale. The intensity contrastaround the defects varied depending on the emission band, suggesting differences in their interactionswith impurities and point defects https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.711 |
| abstractGer |
The effectiveness of room-temperature photoluminescence (PL) mapping wasdemonstrated for nondestructive detection of structural defects, such as dislocations, micropipes andstacking faults, in SiC wafers. PL spectra of bulk wafers were dominated by deep-level emissionsdue to Si vacancies, vanadium and undefined centers like UD-1 at room temperature, while thosefrom epitaxial wafers involved near band-edge emission. We developed a whole-wafer PL intensitymapping system with a capability of zooming in on the area of interest with a spatial resolution ashigh as 1 μm, and showed that the mapping patterns agree well with the etch-pit patterns originatingfrom the structural defects both on a wafer scale and on a microscopic scale. The intensity contrastaround the defects varied depending on the emission band, suggesting differences in their interactionswith impurities and point defects https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.711 |
| abstract_unstemmed |
The effectiveness of room-temperature photoluminescence (PL) mapping wasdemonstrated for nondestructive detection of structural defects, such as dislocations, micropipes andstacking faults, in SiC wafers. PL spectra of bulk wafers were dominated by deep-level emissionsdue to Si vacancies, vanadium and undefined centers like UD-1 at room temperature, while thosefrom epitaxial wafers involved near band-edge emission. We developed a whole-wafer PL intensitymapping system with a capability of zooming in on the area of interest with a spatial resolution ashigh as 1 μm, and showed that the mapping patterns agree well with the etch-pit patterns originatingfrom the structural defects both on a wafer scale and on a microscopic scale. The intensity contrastaround the defects varied depending on the emission band, suggesting differences in their interactionswith impurities and point defects https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.711 |
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Characterization of SiC Wafers by Photoluminescence Mapping |
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https://www.tib.eu/de/openurl/search/?pid=doi:10.4028/www.scientific.net/MSF.527-529.711 https://doi.org//10.4028/www.scientific.net/MSF.527-529.711 |
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Higashi, E. Hayashi, Toshihiko Kinoshita, Hiroyuki Shiomi, Hiromu |
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Higashi, E. Hayashi, Toshihiko Kinoshita, Hiroyuki Shiomi, Hiromu |
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