Carbonization of Porous Silicon for 3C-SiC Growth
In the present work, the carbonization of porous silicon for the subsequent 3C-SiCgrowth has been systematically studied. The effect of temperature and acetylene flow-rate on thechemical state of the surface and structure relaxation was studied. It was found that the porousnano-crystalline morpholog...
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| Autor*in: |
Vasin, A.V. [verfasserIn] |
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E-Artikel |
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Englisch |
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s.l. Stafa-Zurich, Switzerland: 2007 |
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https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.167 |
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Online-Ressource (4 pages) |
| Reproduktion: |
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008 |
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| Übergeordnetes Werk: |
In: Materials science forum - Uetikon : Trans Tech Publ., 1984, Vol. 556-557 (Sept. 2007), p. 167-170 |
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volume:556-557 ; year:2007 ; pages:167-170 |
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10.4028/www.scientific.net/MSF.556-557.167 doi (DE-627)NLEJ238052389 DE-627 ger DE-627 rakwb eng Vasin, A.V. verfasserin aut Carbonization of Porous Silicon for 3C-SiC Growth s.l. Stafa-Zurich, Switzerland 2007 Online-Ressource (4 pages) nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.167 In the present work, the carbonization of porous silicon for the subsequent 3C-SiCgrowth has been systematically studied. The effect of temperature and acetylene flow-rate on thechemical state of the surface and structure relaxation was studied. It was found that the porousnano-crystalline morphology is unstable and tends to recrystallize in temperature range typical of3C-SiC growth on Si (10000C-13000C). The carbonization impedes recrystallization at 10000C, butat 13000C the full recrystallization takes place. Pyrolytic amorphous graphite-like carbon was foundon porous silicon carbonized at temperature and with acetylene flow-rate above critical values Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008 Ishikawa, Yukari oth Shibata, Noriyoshi oth Salonen, Jarno oth Lehto, Vesa Pekka oth In Materials science forum Uetikon : Trans Tech Publ., 1984 Vol. 556-557 (Sept. 2007), p. 167-170 Online-Ressource (DE-627)NLEJ237794969 (DE-600)2047372-2 1662-9752 nnns volume:556-557 year:2007 pages:167-170 https://www.tib.eu/de/openurl/search/?pid=doi:10.4028/www.scientific.net/MSF.556-557.167 text/html Deutschlandweit zugänglich Volltext https://doi.org//10.4028/www.scientific.net/MSF.556-557.167 text/html Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-SNT GBV_NL_ARTICLE AR 556-557 2007 167-170 Vol. 556-557 (Sept. 2007), p. 167-170 |
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10.4028/www.scientific.net/MSF.556-557.167 doi (DE-627)NLEJ238052389 DE-627 ger DE-627 rakwb eng Vasin, A.V. verfasserin aut Carbonization of Porous Silicon for 3C-SiC Growth s.l. Stafa-Zurich, Switzerland 2007 Online-Ressource (4 pages) nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.167 In the present work, the carbonization of porous silicon for the subsequent 3C-SiCgrowth has been systematically studied. The effect of temperature and acetylene flow-rate on thechemical state of the surface and structure relaxation was studied. It was found that the porousnano-crystalline morphology is unstable and tends to recrystallize in temperature range typical of3C-SiC growth on Si (10000C-13000C). The carbonization impedes recrystallization at 10000C, butat 13000C the full recrystallization takes place. Pyrolytic amorphous graphite-like carbon was foundon porous silicon carbonized at temperature and with acetylene flow-rate above critical values Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008 Ishikawa, Yukari oth Shibata, Noriyoshi oth Salonen, Jarno oth Lehto, Vesa Pekka oth In Materials science forum Uetikon : Trans Tech Publ., 1984 Vol. 556-557 (Sept. 2007), p. 167-170 Online-Ressource (DE-627)NLEJ237794969 (DE-600)2047372-2 1662-9752 nnns volume:556-557 year:2007 pages:167-170 https://www.tib.eu/de/openurl/search/?pid=doi:10.4028/www.scientific.net/MSF.556-557.167 text/html Deutschlandweit zugänglich Volltext https://doi.org//10.4028/www.scientific.net/MSF.556-557.167 text/html Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-SNT GBV_NL_ARTICLE AR 556-557 2007 167-170 Vol. 556-557 (Sept. 2007), p. 167-170 |
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10.4028/www.scientific.net/MSF.556-557.167 doi (DE-627)NLEJ238052389 DE-627 ger DE-627 rakwb eng Vasin, A.V. verfasserin aut Carbonization of Porous Silicon for 3C-SiC Growth s.l. Stafa-Zurich, Switzerland 2007 Online-Ressource (4 pages) nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.167 In the present work, the carbonization of porous silicon for the subsequent 3C-SiCgrowth has been systematically studied. The effect of temperature and acetylene flow-rate on thechemical state of the surface and structure relaxation was studied. It was found that the porousnano-crystalline morphology is unstable and tends to recrystallize in temperature range typical of3C-SiC growth on Si (10000C-13000C). The carbonization impedes recrystallization at 10000C, butat 13000C the full recrystallization takes place. Pyrolytic amorphous graphite-like carbon was foundon porous silicon carbonized at temperature and with acetylene flow-rate above critical values Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008 Ishikawa, Yukari oth Shibata, Noriyoshi oth Salonen, Jarno oth Lehto, Vesa Pekka oth In Materials science forum Uetikon : Trans Tech Publ., 1984 Vol. 556-557 (Sept. 2007), p. 167-170 Online-Ressource (DE-627)NLEJ237794969 (DE-600)2047372-2 1662-9752 nnns volume:556-557 year:2007 pages:167-170 https://www.tib.eu/de/openurl/search/?pid=doi:10.4028/www.scientific.net/MSF.556-557.167 text/html Deutschlandweit zugänglich Volltext https://doi.org//10.4028/www.scientific.net/MSF.556-557.167 text/html Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-SNT GBV_NL_ARTICLE AR 556-557 2007 167-170 Vol. 556-557 (Sept. 2007), p. 167-170 |
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10.4028/www.scientific.net/MSF.556-557.167 doi (DE-627)NLEJ238052389 DE-627 ger DE-627 rakwb eng Vasin, A.V. verfasserin aut Carbonization of Porous Silicon for 3C-SiC Growth s.l. Stafa-Zurich, Switzerland 2007 Online-Ressource (4 pages) nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.167 In the present work, the carbonization of porous silicon for the subsequent 3C-SiCgrowth has been systematically studied. The effect of temperature and acetylene flow-rate on thechemical state of the surface and structure relaxation was studied. It was found that the porousnano-crystalline morphology is unstable and tends to recrystallize in temperature range typical of3C-SiC growth on Si (10000C-13000C). The carbonization impedes recrystallization at 10000C, butat 13000C the full recrystallization takes place. Pyrolytic amorphous graphite-like carbon was foundon porous silicon carbonized at temperature and with acetylene flow-rate above critical values Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008 Ishikawa, Yukari oth Shibata, Noriyoshi oth Salonen, Jarno oth Lehto, Vesa Pekka oth In Materials science forum Uetikon : Trans Tech Publ., 1984 Vol. 556-557 (Sept. 2007), p. 167-170 Online-Ressource (DE-627)NLEJ237794969 (DE-600)2047372-2 1662-9752 nnns volume:556-557 year:2007 pages:167-170 https://www.tib.eu/de/openurl/search/?pid=doi:10.4028/www.scientific.net/MSF.556-557.167 text/html Deutschlandweit zugänglich Volltext https://doi.org//10.4028/www.scientific.net/MSF.556-557.167 text/html Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-SNT GBV_NL_ARTICLE AR 556-557 2007 167-170 Vol. 556-557 (Sept. 2007), p. 167-170 |
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10.4028/www.scientific.net/MSF.556-557.167 doi (DE-627)NLEJ238052389 DE-627 ger DE-627 rakwb eng Vasin, A.V. verfasserin aut Carbonization of Porous Silicon for 3C-SiC Growth s.l. Stafa-Zurich, Switzerland 2007 Online-Ressource (4 pages) nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.167 In the present work, the carbonization of porous silicon for the subsequent 3C-SiCgrowth has been systematically studied. The effect of temperature and acetylene flow-rate on thechemical state of the surface and structure relaxation was studied. It was found that the porousnano-crystalline morphology is unstable and tends to recrystallize in temperature range typical of3C-SiC growth on Si (10000C-13000C). The carbonization impedes recrystallization at 10000C, butat 13000C the full recrystallization takes place. Pyrolytic amorphous graphite-like carbon was foundon porous silicon carbonized at temperature and with acetylene flow-rate above critical values Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008 Ishikawa, Yukari oth Shibata, Noriyoshi oth Salonen, Jarno oth Lehto, Vesa Pekka oth In Materials science forum Uetikon : Trans Tech Publ., 1984 Vol. 556-557 (Sept. 2007), p. 167-170 Online-Ressource (DE-627)NLEJ237794969 (DE-600)2047372-2 1662-9752 nnns volume:556-557 year:2007 pages:167-170 https://www.tib.eu/de/openurl/search/?pid=doi:10.4028/www.scientific.net/MSF.556-557.167 text/html Deutschlandweit zugänglich Volltext https://doi.org//10.4028/www.scientific.net/MSF.556-557.167 text/html Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-SNT GBV_NL_ARTICLE AR 556-557 2007 167-170 Vol. 556-557 (Sept. 2007), p. 167-170 |
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In the present work, the carbonization of porous silicon for the subsequent 3C-SiCgrowth has been systematically studied. The effect of temperature and acetylene flow-rate on thechemical state of the surface and structure relaxation was studied. It was found that the porousnano-crystalline morphology is unstable and tends to recrystallize in temperature range typical of3C-SiC growth on Si (10000C-13000C). The carbonization impedes recrystallization at 10000C, butat 13000C the full recrystallization takes place. Pyrolytic amorphous graphite-like carbon was foundon porous silicon carbonized at temperature and with acetylene flow-rate above critical values https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.167 |
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In the present work, the carbonization of porous silicon for the subsequent 3C-SiCgrowth has been systematically studied. The effect of temperature and acetylene flow-rate on thechemical state of the surface and structure relaxation was studied. It was found that the porousnano-crystalline morphology is unstable and tends to recrystallize in temperature range typical of3C-SiC growth on Si (10000C-13000C). The carbonization impedes recrystallization at 10000C, butat 13000C the full recrystallization takes place. Pyrolytic amorphous graphite-like carbon was foundon porous silicon carbonized at temperature and with acetylene flow-rate above critical values https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.167 |
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In the present work, the carbonization of porous silicon for the subsequent 3C-SiCgrowth has been systematically studied. The effect of temperature and acetylene flow-rate on thechemical state of the surface and structure relaxation was studied. It was found that the porousnano-crystalline morphology is unstable and tends to recrystallize in temperature range typical of3C-SiC growth on Si (10000C-13000C). The carbonization impedes recrystallization at 10000C, butat 13000C the full recrystallization takes place. Pyrolytic amorphous graphite-like carbon was foundon porous silicon carbonized at temperature and with acetylene flow-rate above critical values https://getinfo.de/app/details?id=transtech:doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.167 |
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Ishikawa, Yukari Shibata, Noriyoshi Salonen, Jarno Lehto, Vesa Pekka |
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Ishikawa, Yukari Shibata, Noriyoshi Salonen, Jarno Lehto, Vesa Pekka |
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NLEJ237794969 |
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10.4028/www.scientific.net/MSF.556-557.167 |
| up_date |
2024-07-06T03:44:07.484Z |
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