Characteristics of a Light Emitting Diode—Transistor Photoplethysmograph
A reflective transducer which combines a gallium arsenide infrared emitting diode and silicon phototransistor has been adapted for use us a photoelectric plethysmograph. This device is inexpensive, compact, and easily applied to the skin surface. The phototransistor responds in a linear fashion to t...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Tahmoush, Albert J. [verfasserIn] Jkennings, J. Richard [verfasserIn] Lee, Alison L. [verfasserIn] |
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| Format: |
E-Artikel |
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| Erschienen: |
Oxford, UK: Blackwell Publishing Ltd ; 1976 |
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| Schlagwörter: |
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| Umfang: |
Online-Ressource |
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| Reproduktion: |
2007 ; Blackwell Publishing Journal Backfiles 1879-2005 |
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| Übergeordnetes Werk: |
In: Psychophysiology - Malden, Mass. [u.a.] : Wiley-Blackwell, 1964, 13(1976), 4, Seite 0 |
| Übergeordnetes Werk: |
volume:13 ; year:1976 ; number:4 ; pages:0 |
| Links: |
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| DOI / URN: |
10.1111/j.1469-8986.1976.tb03090.x |
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| 520 | |a A reflective transducer which combines a gallium arsenide infrared emitting diode and silicon phototransistor has been adapted for use us a photoelectric plethysmograph. This device is inexpensive, compact, and easily applied to the skin surface. The phototransistor responds in a linear fashion to the range of light intensities generally obtained from normal subjects, and the phototransistor output is relatively independent of both temperature and prior light exposure. The light source possesses a narrow spectral distribution in the infrared region. These characteristics suggest that the LKD-transistor photoplethysmograph is superior to the miniature tungsten lump-photoconductive cell combination generally employed in photoplethysmography. | ||
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| 700 | 1 | |a Webhr, Frederick |4 oth | |
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10.1111/j.1469-8986.1976.tb03090.x doi (DE-627)NLEJ240926196 DE-627 ger DE-627 rakwb Tahmoush, Albert J. verfasserin aut Characteristics of a Light Emitting Diode—Transistor Photoplethysmograph Oxford, UK Blackwell Publishing Ltd 1976 Online-Ressource nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A reflective transducer which combines a gallium arsenide infrared emitting diode and silicon phototransistor has been adapted for use us a photoelectric plethysmograph. This device is inexpensive, compact, and easily applied to the skin surface. The phototransistor responds in a linear fashion to the range of light intensities generally obtained from normal subjects, and the phototransistor output is relatively independent of both temperature and prior light exposure. The light source possesses a narrow spectral distribution in the infrared region. These characteristics suggest that the LKD-transistor photoplethysmograph is superior to the miniature tungsten lump-photoconductive cell combination generally employed in photoplethysmography. 2007 Blackwell Publishing Journal Backfiles 1879-2005 |2007|||||||||| Photoplethysmography Jkennings, J. Richard verfasserin aut Lee, Alison L. verfasserin aut Camp, Stephen oth Webhr, Frederick oth In Psychophysiology Malden, Mass. [u.a.] : Wiley-Blackwell, 1964 13(1976), 4, Seite 0 Online-Ressource (DE-627)NLEJ243927487 (DE-600)1484299-3 1469-8986 nnns volume:13 year:1976 number:4 pages:0 http://dx.doi.org/10.1111/j.1469-8986.1976.tb03090.x text/html Verlag Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-DJB GBV_NL_ARTICLE AR 13 1976 4 0 |
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10.1111/j.1469-8986.1976.tb03090.x doi (DE-627)NLEJ240926196 DE-627 ger DE-627 rakwb Tahmoush, Albert J. verfasserin aut Characteristics of a Light Emitting Diode—Transistor Photoplethysmograph Oxford, UK Blackwell Publishing Ltd 1976 Online-Ressource nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A reflective transducer which combines a gallium arsenide infrared emitting diode and silicon phototransistor has been adapted for use us a photoelectric plethysmograph. This device is inexpensive, compact, and easily applied to the skin surface. The phototransistor responds in a linear fashion to the range of light intensities generally obtained from normal subjects, and the phototransistor output is relatively independent of both temperature and prior light exposure. The light source possesses a narrow spectral distribution in the infrared region. These characteristics suggest that the LKD-transistor photoplethysmograph is superior to the miniature tungsten lump-photoconductive cell combination generally employed in photoplethysmography. 2007 Blackwell Publishing Journal Backfiles 1879-2005 |2007|||||||||| Photoplethysmography Jkennings, J. Richard verfasserin aut Lee, Alison L. verfasserin aut Camp, Stephen oth Webhr, Frederick oth In Psychophysiology Malden, Mass. [u.a.] : Wiley-Blackwell, 1964 13(1976), 4, Seite 0 Online-Ressource (DE-627)NLEJ243927487 (DE-600)1484299-3 1469-8986 nnns volume:13 year:1976 number:4 pages:0 http://dx.doi.org/10.1111/j.1469-8986.1976.tb03090.x text/html Verlag Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-DJB GBV_NL_ARTICLE AR 13 1976 4 0 |
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10.1111/j.1469-8986.1976.tb03090.x doi (DE-627)NLEJ240926196 DE-627 ger DE-627 rakwb Tahmoush, Albert J. verfasserin aut Characteristics of a Light Emitting Diode—Transistor Photoplethysmograph Oxford, UK Blackwell Publishing Ltd 1976 Online-Ressource nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A reflective transducer which combines a gallium arsenide infrared emitting diode and silicon phototransistor has been adapted for use us a photoelectric plethysmograph. This device is inexpensive, compact, and easily applied to the skin surface. The phototransistor responds in a linear fashion to the range of light intensities generally obtained from normal subjects, and the phototransistor output is relatively independent of both temperature and prior light exposure. The light source possesses a narrow spectral distribution in the infrared region. These characteristics suggest that the LKD-transistor photoplethysmograph is superior to the miniature tungsten lump-photoconductive cell combination generally employed in photoplethysmography. 2007 Blackwell Publishing Journal Backfiles 1879-2005 |2007|||||||||| Photoplethysmography Jkennings, J. Richard verfasserin aut Lee, Alison L. verfasserin aut Camp, Stephen oth Webhr, Frederick oth In Psychophysiology Malden, Mass. [u.a.] : Wiley-Blackwell, 1964 13(1976), 4, Seite 0 Online-Ressource (DE-627)NLEJ243927487 (DE-600)1484299-3 1469-8986 nnns volume:13 year:1976 number:4 pages:0 http://dx.doi.org/10.1111/j.1469-8986.1976.tb03090.x text/html Verlag Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-DJB GBV_NL_ARTICLE AR 13 1976 4 0 |
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10.1111/j.1469-8986.1976.tb03090.x doi (DE-627)NLEJ240926196 DE-627 ger DE-627 rakwb Tahmoush, Albert J. verfasserin aut Characteristics of a Light Emitting Diode—Transistor Photoplethysmograph Oxford, UK Blackwell Publishing Ltd 1976 Online-Ressource nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A reflective transducer which combines a gallium arsenide infrared emitting diode and silicon phototransistor has been adapted for use us a photoelectric plethysmograph. This device is inexpensive, compact, and easily applied to the skin surface. The phototransistor responds in a linear fashion to the range of light intensities generally obtained from normal subjects, and the phototransistor output is relatively independent of both temperature and prior light exposure. The light source possesses a narrow spectral distribution in the infrared region. These characteristics suggest that the LKD-transistor photoplethysmograph is superior to the miniature tungsten lump-photoconductive cell combination generally employed in photoplethysmography. 2007 Blackwell Publishing Journal Backfiles 1879-2005 |2007|||||||||| Photoplethysmography Jkennings, J. Richard verfasserin aut Lee, Alison L. verfasserin aut Camp, Stephen oth Webhr, Frederick oth In Psychophysiology Malden, Mass. [u.a.] : Wiley-Blackwell, 1964 13(1976), 4, Seite 0 Online-Ressource (DE-627)NLEJ243927487 (DE-600)1484299-3 1469-8986 nnns volume:13 year:1976 number:4 pages:0 http://dx.doi.org/10.1111/j.1469-8986.1976.tb03090.x text/html Verlag Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-DJB GBV_NL_ARTICLE AR 13 1976 4 0 |
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10.1111/j.1469-8986.1976.tb03090.x doi (DE-627)NLEJ240926196 DE-627 ger DE-627 rakwb Tahmoush, Albert J. verfasserin aut Characteristics of a Light Emitting Diode—Transistor Photoplethysmograph Oxford, UK Blackwell Publishing Ltd 1976 Online-Ressource nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A reflective transducer which combines a gallium arsenide infrared emitting diode and silicon phototransistor has been adapted for use us a photoelectric plethysmograph. This device is inexpensive, compact, and easily applied to the skin surface. The phototransistor responds in a linear fashion to the range of light intensities generally obtained from normal subjects, and the phototransistor output is relatively independent of both temperature and prior light exposure. The light source possesses a narrow spectral distribution in the infrared region. These characteristics suggest that the LKD-transistor photoplethysmograph is superior to the miniature tungsten lump-photoconductive cell combination generally employed in photoplethysmography. 2007 Blackwell Publishing Journal Backfiles 1879-2005 |2007|||||||||| Photoplethysmography Jkennings, J. Richard verfasserin aut Lee, Alison L. verfasserin aut Camp, Stephen oth Webhr, Frederick oth In Psychophysiology Malden, Mass. [u.a.] : Wiley-Blackwell, 1964 13(1976), 4, Seite 0 Online-Ressource (DE-627)NLEJ243927487 (DE-600)1484299-3 1469-8986 nnns volume:13 year:1976 number:4 pages:0 http://dx.doi.org/10.1111/j.1469-8986.1976.tb03090.x text/html Verlag Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-DJB GBV_NL_ARTICLE AR 13 1976 4 0 |
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Characteristics of a Light Emitting Diode—Transistor Photoplethysmograph Photoplethysmography |
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A reflective transducer which combines a gallium arsenide infrared emitting diode and silicon phototransistor has been adapted for use us a photoelectric plethysmograph. This device is inexpensive, compact, and easily applied to the skin surface. The phototransistor responds in a linear fashion to the range of light intensities generally obtained from normal subjects, and the phototransistor output is relatively independent of both temperature and prior light exposure. The light source possesses a narrow spectral distribution in the infrared region. These characteristics suggest that the LKD-transistor photoplethysmograph is superior to the miniature tungsten lump-photoconductive cell combination generally employed in photoplethysmography. |
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A reflective transducer which combines a gallium arsenide infrared emitting diode and silicon phototransistor has been adapted for use us a photoelectric plethysmograph. This device is inexpensive, compact, and easily applied to the skin surface. The phototransistor responds in a linear fashion to the range of light intensities generally obtained from normal subjects, and the phototransistor output is relatively independent of both temperature and prior light exposure. The light source possesses a narrow spectral distribution in the infrared region. These characteristics suggest that the LKD-transistor photoplethysmograph is superior to the miniature tungsten lump-photoconductive cell combination generally employed in photoplethysmography. |
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A reflective transducer which combines a gallium arsenide infrared emitting diode and silicon phototransistor has been adapted for use us a photoelectric plethysmograph. This device is inexpensive, compact, and easily applied to the skin surface. The phototransistor responds in a linear fashion to the range of light intensities generally obtained from normal subjects, and the phototransistor output is relatively independent of both temperature and prior light exposure. The light source possesses a narrow spectral distribution in the infrared region. These characteristics suggest that the LKD-transistor photoplethysmograph is superior to the miniature tungsten lump-photoconductive cell combination generally employed in photoplethysmography. |
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This device is inexpensive, compact, and easily applied to the skin surface. The phototransistor responds in a linear fashion to the range of light intensities generally obtained from normal subjects, and the phototransistor output is relatively independent of both temperature and prior light exposure. The light source possesses a narrow spectral distribution in the infrared region. These characteristics suggest that the LKD-transistor photoplethysmograph is superior to the miniature tungsten lump-photoconductive cell combination generally employed in photoplethysmography.</subfield></datafield><datafield tag="533" ind1=" " ind2=" "><subfield code="d">2007</subfield><subfield code="f">Blackwell Publishing Journal Backfiles 1879-2005</subfield><subfield code="7">|2007||||||||||</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Photoplethysmography</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Jkennings, J. 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7.399349 |