Enhanced Creep Resistant Silicon-Nitride-Based Nanocomposite
Silicon nitride–silicon carbide nanocomposite has been prepared by an in situ method that utilizes C+SiO2 carbo-thermal reduction during the sintering process. The developed material is nearly defect free and consists of a silicon nitride matrix with an average grain size of approximately 200 nm wit...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Dusza, J. [verfasserIn] Kovalčík, J. [verfasserIn] Hvizdoš, P. [verfasserIn] |
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E-Artikel |
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| Erschienen: |
Oxford, UK: Blackwell Science Inc ; 2005 |
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Online-Ressource |
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| Reproduktion: |
2005 ; Blackwell Publishing Journal Backfiles 1879-2005 |
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In: Journal of the American Ceramic Society - American Ceramic Society ; GKD-ID: 6113X, Oxford [u.a.] : Wiley-Blackwell, 1918, 88(2005), 6, Seite 0 |
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volume:88 ; year:2005 ; number:6 ; pages:0 |
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| DOI / URN: |
10.1111/j.1551-2916.2005.00289.x |
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| 520 | |a Silicon nitride–silicon carbide nanocomposite has been prepared by an in situ method that utilizes C+SiO2 carbo-thermal reduction during the sintering process. The developed material is nearly defect free and consists of a silicon nitride matrix with an average grain size of approximately 200 nm with inter- and intra-granular SiC particles with sizes of approximately 150 and 40 nm, respectively. The creep behavior was investigated in bending at temperatures from 1200° to 1450°C, under stresses ranking from 50 to 150 MPa in air. The stress exponents are in the interval from 0.8 to 1.28 and the apparent activation energy is 480 kJ/mol. A significantly enhanced creep resistance was achieved by the incorporation of SiC nanoparticles into the matrix. This is because of a change of the microstructure and grain boundary chemistry leading to a change of creep mechanism and creep rate. | ||
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10.1111/j.1551-2916.2005.00289.x doi (DE-627)NLEJ243445970 DE-627 ger DE-627 rakwb Dusza, J. verfasserin aut Enhanced Creep Resistant Silicon-Nitride-Based Nanocomposite Oxford, UK Blackwell Science Inc 2005 Online-Ressource nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Silicon nitride–silicon carbide nanocomposite has been prepared by an in situ method that utilizes C+SiO2 carbo-thermal reduction during the sintering process. The developed material is nearly defect free and consists of a silicon nitride matrix with an average grain size of approximately 200 nm with inter- and intra-granular SiC particles with sizes of approximately 150 and 40 nm, respectively. The creep behavior was investigated in bending at temperatures from 1200° to 1450°C, under stresses ranking from 50 to 150 MPa in air. The stress exponents are in the interval from 0.8 to 1.28 and the apparent activation energy is 480 kJ/mol. A significantly enhanced creep resistance was achieved by the incorporation of SiC nanoparticles into the matrix. This is because of a change of the microstructure and grain boundary chemistry leading to a change of creep mechanism and creep rate. 2005 Blackwell Publishing Journal Backfiles 1879-2005 |2005|||||||||| Kovalčík, J. verfasserin aut Hvizdoš, P. verfasserin aut Šajgalík, P. oth Hnatko, M. oth Reece, M. J. oth In American Ceramic Society ; GKD-ID: 6113X Journal of the American Ceramic Society Oxford [u.a.] : Wiley-Blackwell, 1918 88(2005), 6, Seite 0 Online-Ressource (DE-627)NLEJ243927835 (DE-600)2008170-4 1551-2916 nnns volume:88 year:2005 number:6 pages:0 http://dx.doi.org/10.1111/j.1551-2916.2005.00289.x text/html Verlag Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-DJB GBV_NL_ARTICLE AR 88 2005 6 0 |
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10.1111/j.1551-2916.2005.00289.x doi (DE-627)NLEJ243445970 DE-627 ger DE-627 rakwb Dusza, J. verfasserin aut Enhanced Creep Resistant Silicon-Nitride-Based Nanocomposite Oxford, UK Blackwell Science Inc 2005 Online-Ressource nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Silicon nitride–silicon carbide nanocomposite has been prepared by an in situ method that utilizes C+SiO2 carbo-thermal reduction during the sintering process. The developed material is nearly defect free and consists of a silicon nitride matrix with an average grain size of approximately 200 nm with inter- and intra-granular SiC particles with sizes of approximately 150 and 40 nm, respectively. The creep behavior was investigated in bending at temperatures from 1200° to 1450°C, under stresses ranking from 50 to 150 MPa in air. The stress exponents are in the interval from 0.8 to 1.28 and the apparent activation energy is 480 kJ/mol. A significantly enhanced creep resistance was achieved by the incorporation of SiC nanoparticles into the matrix. This is because of a change of the microstructure and grain boundary chemistry leading to a change of creep mechanism and creep rate. 2005 Blackwell Publishing Journal Backfiles 1879-2005 |2005|||||||||| Kovalčík, J. verfasserin aut Hvizdoš, P. verfasserin aut Šajgalík, P. oth Hnatko, M. oth Reece, M. J. oth In American Ceramic Society ; GKD-ID: 6113X Journal of the American Ceramic Society Oxford [u.a.] : Wiley-Blackwell, 1918 88(2005), 6, Seite 0 Online-Ressource (DE-627)NLEJ243927835 (DE-600)2008170-4 1551-2916 nnns volume:88 year:2005 number:6 pages:0 http://dx.doi.org/10.1111/j.1551-2916.2005.00289.x text/html Verlag Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-DJB GBV_NL_ARTICLE AR 88 2005 6 0 |
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10.1111/j.1551-2916.2005.00289.x doi (DE-627)NLEJ243445970 DE-627 ger DE-627 rakwb Dusza, J. verfasserin aut Enhanced Creep Resistant Silicon-Nitride-Based Nanocomposite Oxford, UK Blackwell Science Inc 2005 Online-Ressource nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Silicon nitride–silicon carbide nanocomposite has been prepared by an in situ method that utilizes C+SiO2 carbo-thermal reduction during the sintering process. The developed material is nearly defect free and consists of a silicon nitride matrix with an average grain size of approximately 200 nm with inter- and intra-granular SiC particles with sizes of approximately 150 and 40 nm, respectively. The creep behavior was investigated in bending at temperatures from 1200° to 1450°C, under stresses ranking from 50 to 150 MPa in air. The stress exponents are in the interval from 0.8 to 1.28 and the apparent activation energy is 480 kJ/mol. A significantly enhanced creep resistance was achieved by the incorporation of SiC nanoparticles into the matrix. This is because of a change of the microstructure and grain boundary chemistry leading to a change of creep mechanism and creep rate. 2005 Blackwell Publishing Journal Backfiles 1879-2005 |2005|||||||||| Kovalčík, J. verfasserin aut Hvizdoš, P. verfasserin aut Šajgalík, P. oth Hnatko, M. oth Reece, M. J. oth In American Ceramic Society ; GKD-ID: 6113X Journal of the American Ceramic Society Oxford [u.a.] : Wiley-Blackwell, 1918 88(2005), 6, Seite 0 Online-Ressource (DE-627)NLEJ243927835 (DE-600)2008170-4 1551-2916 nnns volume:88 year:2005 number:6 pages:0 http://dx.doi.org/10.1111/j.1551-2916.2005.00289.x text/html Verlag Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-DJB GBV_NL_ARTICLE AR 88 2005 6 0 |
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10.1111/j.1551-2916.2005.00289.x doi (DE-627)NLEJ243445970 DE-627 ger DE-627 rakwb Dusza, J. verfasserin aut Enhanced Creep Resistant Silicon-Nitride-Based Nanocomposite Oxford, UK Blackwell Science Inc 2005 Online-Ressource nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Silicon nitride–silicon carbide nanocomposite has been prepared by an in situ method that utilizes C+SiO2 carbo-thermal reduction during the sintering process. The developed material is nearly defect free and consists of a silicon nitride matrix with an average grain size of approximately 200 nm with inter- and intra-granular SiC particles with sizes of approximately 150 and 40 nm, respectively. The creep behavior was investigated in bending at temperatures from 1200° to 1450°C, under stresses ranking from 50 to 150 MPa in air. The stress exponents are in the interval from 0.8 to 1.28 and the apparent activation energy is 480 kJ/mol. A significantly enhanced creep resistance was achieved by the incorporation of SiC nanoparticles into the matrix. This is because of a change of the microstructure and grain boundary chemistry leading to a change of creep mechanism and creep rate. 2005 Blackwell Publishing Journal Backfiles 1879-2005 |2005|||||||||| Kovalčík, J. verfasserin aut Hvizdoš, P. verfasserin aut Šajgalík, P. oth Hnatko, M. oth Reece, M. J. oth In American Ceramic Society ; GKD-ID: 6113X Journal of the American Ceramic Society Oxford [u.a.] : Wiley-Blackwell, 1918 88(2005), 6, Seite 0 Online-Ressource (DE-627)NLEJ243927835 (DE-600)2008170-4 1551-2916 nnns volume:88 year:2005 number:6 pages:0 http://dx.doi.org/10.1111/j.1551-2916.2005.00289.x text/html Verlag Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-DJB GBV_NL_ARTICLE AR 88 2005 6 0 |
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10.1111/j.1551-2916.2005.00289.x doi (DE-627)NLEJ243445970 DE-627 ger DE-627 rakwb Dusza, J. verfasserin aut Enhanced Creep Resistant Silicon-Nitride-Based Nanocomposite Oxford, UK Blackwell Science Inc 2005 Online-Ressource nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Silicon nitride–silicon carbide nanocomposite has been prepared by an in situ method that utilizes C+SiO2 carbo-thermal reduction during the sintering process. The developed material is nearly defect free and consists of a silicon nitride matrix with an average grain size of approximately 200 nm with inter- and intra-granular SiC particles with sizes of approximately 150 and 40 nm, respectively. The creep behavior was investigated in bending at temperatures from 1200° to 1450°C, under stresses ranking from 50 to 150 MPa in air. The stress exponents are in the interval from 0.8 to 1.28 and the apparent activation energy is 480 kJ/mol. A significantly enhanced creep resistance was achieved by the incorporation of SiC nanoparticles into the matrix. This is because of a change of the microstructure and grain boundary chemistry leading to a change of creep mechanism and creep rate. 2005 Blackwell Publishing Journal Backfiles 1879-2005 |2005|||||||||| Kovalčík, J. verfasserin aut Hvizdoš, P. verfasserin aut Šajgalík, P. oth Hnatko, M. oth Reece, M. J. oth In American Ceramic Society ; GKD-ID: 6113X Journal of the American Ceramic Society Oxford [u.a.] : Wiley-Blackwell, 1918 88(2005), 6, Seite 0 Online-Ressource (DE-627)NLEJ243927835 (DE-600)2008170-4 1551-2916 nnns volume:88 year:2005 number:6 pages:0 http://dx.doi.org/10.1111/j.1551-2916.2005.00289.x text/html Verlag Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-DJB GBV_NL_ARTICLE AR 88 2005 6 0 |
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Silicon nitride–silicon carbide nanocomposite has been prepared by an in situ method that utilizes C+SiO2 carbo-thermal reduction during the sintering process. The developed material is nearly defect free and consists of a silicon nitride matrix with an average grain size of approximately 200 nm with inter- and intra-granular SiC particles with sizes of approximately 150 and 40 nm, respectively. The creep behavior was investigated in bending at temperatures from 1200° to 1450°C, under stresses ranking from 50 to 150 MPa in air. The stress exponents are in the interval from 0.8 to 1.28 and the apparent activation energy is 480 kJ/mol. A significantly enhanced creep resistance was achieved by the incorporation of SiC nanoparticles into the matrix. This is because of a change of the microstructure and grain boundary chemistry leading to a change of creep mechanism and creep rate. |
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Silicon nitride–silicon carbide nanocomposite has been prepared by an in situ method that utilizes C+SiO2 carbo-thermal reduction during the sintering process. The developed material is nearly defect free and consists of a silicon nitride matrix with an average grain size of approximately 200 nm with inter- and intra-granular SiC particles with sizes of approximately 150 and 40 nm, respectively. The creep behavior was investigated in bending at temperatures from 1200° to 1450°C, under stresses ranking from 50 to 150 MPa in air. The stress exponents are in the interval from 0.8 to 1.28 and the apparent activation energy is 480 kJ/mol. A significantly enhanced creep resistance was achieved by the incorporation of SiC nanoparticles into the matrix. This is because of a change of the microstructure and grain boundary chemistry leading to a change of creep mechanism and creep rate. |
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Silicon nitride–silicon carbide nanocomposite has been prepared by an in situ method that utilizes C+SiO2 carbo-thermal reduction during the sintering process. The developed material is nearly defect free and consists of a silicon nitride matrix with an average grain size of approximately 200 nm with inter- and intra-granular SiC particles with sizes of approximately 150 and 40 nm, respectively. The creep behavior was investigated in bending at temperatures from 1200° to 1450°C, under stresses ranking from 50 to 150 MPa in air. The stress exponents are in the interval from 0.8 to 1.28 and the apparent activation energy is 480 kJ/mol. A significantly enhanced creep resistance was achieved by the incorporation of SiC nanoparticles into the matrix. This is because of a change of the microstructure and grain boundary chemistry leading to a change of creep mechanism and creep rate. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">NLEJ243445970</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20210707181210.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">120427s2005 xx |||||o 00| ||und c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1111/j.1551-2916.2005.00289.x</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)NLEJ243445970</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Dusza, J.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Enhanced Creep Resistant Silicon-Nitride-Based Nanocomposite</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Oxford, UK</subfield><subfield code="b">Blackwell Science Inc</subfield><subfield code="c">2005</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Silicon nitride–silicon carbide nanocomposite has been prepared by an in situ method that utilizes C+SiO2 carbo-thermal reduction during the sintering process. The developed material is nearly defect free and consists of a silicon nitride matrix with an average grain size of approximately 200 nm with inter- and intra-granular SiC particles with sizes of approximately 150 and 40 nm, respectively. The creep behavior was investigated in bending at temperatures from 1200° to 1450°C, under stresses ranking from 50 to 150 MPa in air. The stress exponents are in the interval from 0.8 to 1.28 and the apparent activation energy is 480 kJ/mol. A significantly enhanced creep resistance was achieved by the incorporation of SiC nanoparticles into the matrix. This is because of a change of the microstructure and grain boundary chemistry leading to a change of creep mechanism and creep rate.</subfield></datafield><datafield tag="533" ind1=" " ind2=" "><subfield code="d">2005</subfield><subfield code="f">Blackwell Publishing Journal Backfiles 1879-2005</subfield><subfield code="7">|2005||||||||||</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kovalčík, J.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hvizdoš, P.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Šajgalík, P.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hnatko, M.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Reece, M. J.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="a">American Ceramic Society ; GKD-ID: 6113X</subfield><subfield code="t">Journal of the American Ceramic Society</subfield><subfield code="d">Oxford [u.a.] : Wiley-Blackwell, 1918</subfield><subfield code="g">88(2005), 6, Seite 0</subfield><subfield code="h">Online-Ressource</subfield><subfield code="w">(DE-627)NLEJ243927835</subfield><subfield code="w">(DE-600)2008170-4</subfield><subfield code="x">1551-2916</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:88</subfield><subfield code="g">year:2005</subfield><subfield code="g">number:6</subfield><subfield code="g">pages:0</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://dx.doi.org/10.1111/j.1551-2916.2005.00289.x</subfield><subfield code="q">text/html</subfield><subfield code="x">Verlag</subfield><subfield code="z">Deutschlandweit zugänglich</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-1-DJB</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_NL_ARTICLE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">88</subfield><subfield code="j">2005</subfield><subfield code="e">6</subfield><subfield code="h">0</subfield></datafield></record></collection>
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