Effective Doping in Cubic Si3N4 and Ge3N4: A First-Principles Study
First-principles calculations have been conducted to investigate impurities in cubic Si3N4 and Ge3N4. Impurity species suitable for n- and p-type doping are suggested, in terms of the formation and ionization energies. The suggested species are P and O as n-type dopants and Al as a p-type dopant for...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Oba, Fumiyasu [verfasserIn] Tatsumi, Kazuyoshi [verfasserIn] Tanaka, Isao [verfasserIn] |
|---|
| Format: |
E-Artikel |
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| Erschienen: |
Westerville, Ohio: American Ceramics Society ; 2002 |
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| Schlagwörter: |
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| Umfang: |
Online-Ressource |
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| Reproduktion: |
2004 ; Blackwell Publishing Journal Backfiles 1879-2005 |
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| Übergeordnetes Werk: |
In: Journal of the American Ceramic Society - American Ceramic Society ; GKD-ID: 6113X, Oxford [u.a.] : Wiley-Blackwell, 1918, 85(2002), 1, Seite 0 |
| Übergeordnetes Werk: |
volume:85 ; year:2002 ; number:1 ; pages:0 |
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| DOI / URN: |
10.1111/j.1151-2916.2002.tb00046.x |
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| 520 | |a First-principles calculations have been conducted to investigate impurities in cubic Si3N4 and Ge3N4. Impurity species suitable for n- and p-type doping are suggested, in terms of the formation and ionization energies. The suggested species are P and O as n-type dopants and Al as a p-type dopant for c-Si3N4, and Sb and O as n-type dopants and Al as a p-type dopant for c-Ge3N4. The dependence of the formation energies on the chemical potentials indicates that a proper choice of growth conditions is mandatory for suppressing the incorporation of these impurities into anti and interstitial sites, where the impurities can be charged to compensate carriers. | ||
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10.1111/j.1151-2916.2002.tb00046.x doi (DE-627)NLEJ243463987 DE-627 ger DE-627 rakwb Oba, Fumiyasu verfasserin aut Effective Doping in Cubic Si3N4 and Ge3N4: A First-Principles Study Westerville, Ohio American Ceramics Society 2002 Online-Ressource nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier First-principles calculations have been conducted to investigate impurities in cubic Si3N4 and Ge3N4. Impurity species suitable for n- and p-type doping are suggested, in terms of the formation and ionization energies. The suggested species are P and O as n-type dopants and Al as a p-type dopant for c-Si3N4, and Sb and O as n-type dopants and Al as a p-type dopant for c-Ge3N4. The dependence of the formation energies on the chemical potentials indicates that a proper choice of growth conditions is mandatory for suppressing the incorporation of these impurities into anti and interstitial sites, where the impurities can be charged to compensate carriers. 2004 Blackwell Publishing Journal Backfiles 1879-2005 |2004|||||||||| dopants/doping Tatsumi, Kazuyoshi verfasserin aut Tanaka, Isao verfasserin aut Adachi, Hirohiko oth In American Ceramic Society ; GKD-ID: 6113X Journal of the American Ceramic Society Oxford [u.a.] : Wiley-Blackwell, 1918 85(2002), 1, Seite 0 Online-Ressource (DE-627)NLEJ243927835 (DE-600)2008170-4 1551-2916 nnns volume:85 year:2002 number:1 pages:0 http://dx.doi.org/10.1111/j.1151-2916.2002.tb00046.x text/html Verlag Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-DJB GBV_NL_ARTICLE AR 85 2002 1 0 |
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10.1111/j.1151-2916.2002.tb00046.x doi (DE-627)NLEJ243463987 DE-627 ger DE-627 rakwb Oba, Fumiyasu verfasserin aut Effective Doping in Cubic Si3N4 and Ge3N4: A First-Principles Study Westerville, Ohio American Ceramics Society 2002 Online-Ressource nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier First-principles calculations have been conducted to investigate impurities in cubic Si3N4 and Ge3N4. Impurity species suitable for n- and p-type doping are suggested, in terms of the formation and ionization energies. The suggested species are P and O as n-type dopants and Al as a p-type dopant for c-Si3N4, and Sb and O as n-type dopants and Al as a p-type dopant for c-Ge3N4. The dependence of the formation energies on the chemical potentials indicates that a proper choice of growth conditions is mandatory for suppressing the incorporation of these impurities into anti and interstitial sites, where the impurities can be charged to compensate carriers. 2004 Blackwell Publishing Journal Backfiles 1879-2005 |2004|||||||||| dopants/doping Tatsumi, Kazuyoshi verfasserin aut Tanaka, Isao verfasserin aut Adachi, Hirohiko oth In American Ceramic Society ; GKD-ID: 6113X Journal of the American Ceramic Society Oxford [u.a.] : Wiley-Blackwell, 1918 85(2002), 1, Seite 0 Online-Ressource (DE-627)NLEJ243927835 (DE-600)2008170-4 1551-2916 nnns volume:85 year:2002 number:1 pages:0 http://dx.doi.org/10.1111/j.1151-2916.2002.tb00046.x text/html Verlag Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-DJB GBV_NL_ARTICLE AR 85 2002 1 0 |
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10.1111/j.1151-2916.2002.tb00046.x doi (DE-627)NLEJ243463987 DE-627 ger DE-627 rakwb Oba, Fumiyasu verfasserin aut Effective Doping in Cubic Si3N4 and Ge3N4: A First-Principles Study Westerville, Ohio American Ceramics Society 2002 Online-Ressource nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier First-principles calculations have been conducted to investigate impurities in cubic Si3N4 and Ge3N4. Impurity species suitable for n- and p-type doping are suggested, in terms of the formation and ionization energies. The suggested species are P and O as n-type dopants and Al as a p-type dopant for c-Si3N4, and Sb and O as n-type dopants and Al as a p-type dopant for c-Ge3N4. The dependence of the formation energies on the chemical potentials indicates that a proper choice of growth conditions is mandatory for suppressing the incorporation of these impurities into anti and interstitial sites, where the impurities can be charged to compensate carriers. 2004 Blackwell Publishing Journal Backfiles 1879-2005 |2004|||||||||| dopants/doping Tatsumi, Kazuyoshi verfasserin aut Tanaka, Isao verfasserin aut Adachi, Hirohiko oth In American Ceramic Society ; GKD-ID: 6113X Journal of the American Ceramic Society Oxford [u.a.] : Wiley-Blackwell, 1918 85(2002), 1, Seite 0 Online-Ressource (DE-627)NLEJ243927835 (DE-600)2008170-4 1551-2916 nnns volume:85 year:2002 number:1 pages:0 http://dx.doi.org/10.1111/j.1151-2916.2002.tb00046.x text/html Verlag Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-DJB GBV_NL_ARTICLE AR 85 2002 1 0 |
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10.1111/j.1151-2916.2002.tb00046.x doi (DE-627)NLEJ243463987 DE-627 ger DE-627 rakwb Oba, Fumiyasu verfasserin aut Effective Doping in Cubic Si3N4 and Ge3N4: A First-Principles Study Westerville, Ohio American Ceramics Society 2002 Online-Ressource nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier First-principles calculations have been conducted to investigate impurities in cubic Si3N4 and Ge3N4. Impurity species suitable for n- and p-type doping are suggested, in terms of the formation and ionization energies. The suggested species are P and O as n-type dopants and Al as a p-type dopant for c-Si3N4, and Sb and O as n-type dopants and Al as a p-type dopant for c-Ge3N4. The dependence of the formation energies on the chemical potentials indicates that a proper choice of growth conditions is mandatory for suppressing the incorporation of these impurities into anti and interstitial sites, where the impurities can be charged to compensate carriers. 2004 Blackwell Publishing Journal Backfiles 1879-2005 |2004|||||||||| dopants/doping Tatsumi, Kazuyoshi verfasserin aut Tanaka, Isao verfasserin aut Adachi, Hirohiko oth In American Ceramic Society ; GKD-ID: 6113X Journal of the American Ceramic Society Oxford [u.a.] : Wiley-Blackwell, 1918 85(2002), 1, Seite 0 Online-Ressource (DE-627)NLEJ243927835 (DE-600)2008170-4 1551-2916 nnns volume:85 year:2002 number:1 pages:0 http://dx.doi.org/10.1111/j.1151-2916.2002.tb00046.x text/html Verlag Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-DJB GBV_NL_ARTICLE AR 85 2002 1 0 |
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10.1111/j.1151-2916.2002.tb00046.x doi (DE-627)NLEJ243463987 DE-627 ger DE-627 rakwb Oba, Fumiyasu verfasserin aut Effective Doping in Cubic Si3N4 and Ge3N4: A First-Principles Study Westerville, Ohio American Ceramics Society 2002 Online-Ressource nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier First-principles calculations have been conducted to investigate impurities in cubic Si3N4 and Ge3N4. Impurity species suitable for n- and p-type doping are suggested, in terms of the formation and ionization energies. The suggested species are P and O as n-type dopants and Al as a p-type dopant for c-Si3N4, and Sb and O as n-type dopants and Al as a p-type dopant for c-Ge3N4. The dependence of the formation energies on the chemical potentials indicates that a proper choice of growth conditions is mandatory for suppressing the incorporation of these impurities into anti and interstitial sites, where the impurities can be charged to compensate carriers. 2004 Blackwell Publishing Journal Backfiles 1879-2005 |2004|||||||||| dopants/doping Tatsumi, Kazuyoshi verfasserin aut Tanaka, Isao verfasserin aut Adachi, Hirohiko oth In American Ceramic Society ; GKD-ID: 6113X Journal of the American Ceramic Society Oxford [u.a.] : Wiley-Blackwell, 1918 85(2002), 1, Seite 0 Online-Ressource (DE-627)NLEJ243927835 (DE-600)2008170-4 1551-2916 nnns volume:85 year:2002 number:1 pages:0 http://dx.doi.org/10.1111/j.1151-2916.2002.tb00046.x text/html Verlag Deutschlandweit zugänglich Volltext GBV_USEFLAG_U ZDB-1-DJB GBV_NL_ARTICLE AR 85 2002 1 0 |
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First-principles calculations have been conducted to investigate impurities in cubic Si3N4 and Ge3N4. Impurity species suitable for n- and p-type doping are suggested, in terms of the formation and ionization energies. The suggested species are P and O as n-type dopants and Al as a p-type dopant for c-Si3N4, and Sb and O as n-type dopants and Al as a p-type dopant for c-Ge3N4. The dependence of the formation energies on the chemical potentials indicates that a proper choice of growth conditions is mandatory for suppressing the incorporation of these impurities into anti and interstitial sites, where the impurities can be charged to compensate carriers. |
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First-principles calculations have been conducted to investigate impurities in cubic Si3N4 and Ge3N4. Impurity species suitable for n- and p-type doping are suggested, in terms of the formation and ionization energies. The suggested species are P and O as n-type dopants and Al as a p-type dopant for c-Si3N4, and Sb and O as n-type dopants and Al as a p-type dopant for c-Ge3N4. The dependence of the formation energies on the chemical potentials indicates that a proper choice of growth conditions is mandatory for suppressing the incorporation of these impurities into anti and interstitial sites, where the impurities can be charged to compensate carriers. |
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First-principles calculations have been conducted to investigate impurities in cubic Si3N4 and Ge3N4. Impurity species suitable for n- and p-type doping are suggested, in terms of the formation and ionization energies. The suggested species are P and O as n-type dopants and Al as a p-type dopant for c-Si3N4, and Sb and O as n-type dopants and Al as a p-type dopant for c-Ge3N4. The dependence of the formation energies on the chemical potentials indicates that a proper choice of growth conditions is mandatory for suppressing the incorporation of these impurities into anti and interstitial sites, where the impurities can be charged to compensate carriers. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">NLEJ243463987</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20210707181435.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">120427s2002 xx |||||o 00| ||und c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1111/j.1151-2916.2002.tb00046.x</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)NLEJ243463987</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Oba, Fumiyasu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Effective Doping in Cubic Si3N4 and Ge3N4: A First-Principles Study</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Westerville, Ohio</subfield><subfield code="b">American Ceramics Society</subfield><subfield code="c">2002</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">First-principles calculations have been conducted to investigate impurities in cubic Si3N4 and Ge3N4. Impurity species suitable for n- and p-type doping are suggested, in terms of the formation and ionization energies. The suggested species are P and O as n-type dopants and Al as a p-type dopant for c-Si3N4, and Sb and O as n-type dopants and Al as a p-type dopant for c-Ge3N4. The dependence of the formation energies on the chemical potentials indicates that a proper choice of growth conditions is mandatory for suppressing the incorporation of these impurities into anti and interstitial sites, where the impurities can be charged to compensate carriers.</subfield></datafield><datafield tag="533" ind1=" " ind2=" "><subfield code="d">2004</subfield><subfield code="f">Blackwell Publishing Journal Backfiles 1879-2005</subfield><subfield code="7">|2004||||||||||</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">dopants/doping</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Tatsumi, Kazuyoshi</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Tanaka, Isao</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Adachi, Hirohiko</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="a">American Ceramic Society ; GKD-ID: 6113X</subfield><subfield code="t">Journal of the American Ceramic Society</subfield><subfield code="d">Oxford [u.a.] : Wiley-Blackwell, 1918</subfield><subfield code="g">85(2002), 1, Seite 0</subfield><subfield code="h">Online-Ressource</subfield><subfield code="w">(DE-627)NLEJ243927835</subfield><subfield code="w">(DE-600)2008170-4</subfield><subfield code="x">1551-2916</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:85</subfield><subfield code="g">year:2002</subfield><subfield code="g">number:1</subfield><subfield code="g">pages:0</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://dx.doi.org/10.1111/j.1151-2916.2002.tb00046.x</subfield><subfield code="q">text/html</subfield><subfield code="x">Verlag</subfield><subfield code="z">Deutschlandweit zugänglich</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-1-DJB</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_NL_ARTICLE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">85</subfield><subfield code="j">2002</subfield><subfield code="e">1</subfield><subfield code="h">0</subfield></datafield></record></collection>
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