Quantum behavior in nanoscale ballistic rectifiers and artificial materials
Low-temperature experiments are performed on nanoscale nonlinear devices (ballistic rectifiers) as well as nanostructured artificial materials, fabricated from an InP/InGaAs quantum well wafer. A dc output is generated between the lower and upper contacts of these devices, when an ac voltage is appl...
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E-Artikel |
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| Erschienen: |
2003 |
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Online-Ressource 7 |
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APS Digital Backfile Archive 1893-2003 |
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| Übergeordnetes Werk: |
Enthalten in: Physical review / B - College Park, Md. : APS, 1970, 67(2003), 19 |
| Übergeordnetes Werk: |
volume:67 ; year:2003 ; number:19 ; extent:7 |
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| 520 | |a Low-temperature experiments are performed on nanoscale nonlinear devices (ballistic rectifiers) as well as nanostructured artificial materials, fabricated from an InP/InGaAs quantum well wafer. A dc output is generated between the lower and upper contacts of these devices, when an ac voltage is applied between the left and right contacts. As the temperature is lowered from room temperature, the dc output voltage of the ballistic rectifiers gradually changes from negative to positive. Since the negative output at high temperatures has been well understood in the framework of the classical ballistic electron transport, our results indicate that the electron transport comes into a different physical regime at low temperatures. Furthermore, we find that at even lower temperatures, the devices generate a pronounced oscillatory output as a function of the applied bias. Very similar phenomena are observed in the artificial nanomaterials, suggesting the existence of a common mechanism. We present a simple model based on quantum transport, which explains the key phenomena that we have observed at low temperatures. | ||
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(DE-627)NLEJ248693425 (DE-601)aps:c973fd30dd7ae9d495c1f5a2386eda148bddcac3 DE-627 ger DE-627 rakwb Quantum behavior in nanoscale ballistic rectifiers and artificial materials 2003 Online-Ressource 7 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Low-temperature experiments are performed on nanoscale nonlinear devices (ballistic rectifiers) as well as nanostructured artificial materials, fabricated from an InP/InGaAs quantum well wafer. A dc output is generated between the lower and upper contacts of these devices, when an ac voltage is applied between the left and right contacts. As the temperature is lowered from room temperature, the dc output voltage of the ballistic rectifiers gradually changes from negative to positive. Since the negative output at high temperatures has been well understood in the framework of the classical ballistic electron transport, our results indicate that the electron transport comes into a different physical regime at low temperatures. Furthermore, we find that at even lower temperatures, the devices generate a pronounced oscillatory output as a function of the applied bias. Very similar phenomena are observed in the artificial nanomaterials, suggesting the existence of a common mechanism. We present a simple model based on quantum transport, which explains the key phenomena that we have observed at low temperatures. APS Digital Backfile Archive 1893-2003 Löfgren, A. oth Shorubalko, I. oth Omling, P. oth Song, A. M. oth Enthalten in Physical review / B College Park, Md. : APS, 1970 67(2003), 19 Online-Ressource (DE-627)NLEJ248237845 (DE-600)1473011-X 1550-235X nnns volume:67 year:2003 number:19 extent:7 https://www.tib.eu/de/suchen/id/aps%3Ac973fd30dd7ae9d495c1f5a2386eda148bddcac3 Verlag Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-APS GBV_NL_ARTICLE AR 67 2003 19 7 |
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(DE-627)NLEJ248693425 (DE-601)aps:c973fd30dd7ae9d495c1f5a2386eda148bddcac3 DE-627 ger DE-627 rakwb Quantum behavior in nanoscale ballistic rectifiers and artificial materials 2003 Online-Ressource 7 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Low-temperature experiments are performed on nanoscale nonlinear devices (ballistic rectifiers) as well as nanostructured artificial materials, fabricated from an InP/InGaAs quantum well wafer. A dc output is generated between the lower and upper contacts of these devices, when an ac voltage is applied between the left and right contacts. As the temperature is lowered from room temperature, the dc output voltage of the ballistic rectifiers gradually changes from negative to positive. Since the negative output at high temperatures has been well understood in the framework of the classical ballistic electron transport, our results indicate that the electron transport comes into a different physical regime at low temperatures. Furthermore, we find that at even lower temperatures, the devices generate a pronounced oscillatory output as a function of the applied bias. Very similar phenomena are observed in the artificial nanomaterials, suggesting the existence of a common mechanism. We present a simple model based on quantum transport, which explains the key phenomena that we have observed at low temperatures. APS Digital Backfile Archive 1893-2003 Löfgren, A. oth Shorubalko, I. oth Omling, P. oth Song, A. M. oth Enthalten in Physical review / B College Park, Md. : APS, 1970 67(2003), 19 Online-Ressource (DE-627)NLEJ248237845 (DE-600)1473011-X 1550-235X nnns volume:67 year:2003 number:19 extent:7 https://www.tib.eu/de/suchen/id/aps%3Ac973fd30dd7ae9d495c1f5a2386eda148bddcac3 Verlag Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-APS GBV_NL_ARTICLE AR 67 2003 19 7 |
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(DE-627)NLEJ248693425 (DE-601)aps:c973fd30dd7ae9d495c1f5a2386eda148bddcac3 DE-627 ger DE-627 rakwb Quantum behavior in nanoscale ballistic rectifiers and artificial materials 2003 Online-Ressource 7 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Low-temperature experiments are performed on nanoscale nonlinear devices (ballistic rectifiers) as well as nanostructured artificial materials, fabricated from an InP/InGaAs quantum well wafer. A dc output is generated between the lower and upper contacts of these devices, when an ac voltage is applied between the left and right contacts. As the temperature is lowered from room temperature, the dc output voltage of the ballistic rectifiers gradually changes from negative to positive. Since the negative output at high temperatures has been well understood in the framework of the classical ballistic electron transport, our results indicate that the electron transport comes into a different physical regime at low temperatures. Furthermore, we find that at even lower temperatures, the devices generate a pronounced oscillatory output as a function of the applied bias. Very similar phenomena are observed in the artificial nanomaterials, suggesting the existence of a common mechanism. We present a simple model based on quantum transport, which explains the key phenomena that we have observed at low temperatures. APS Digital Backfile Archive 1893-2003 Löfgren, A. oth Shorubalko, I. oth Omling, P. oth Song, A. M. oth Enthalten in Physical review / B College Park, Md. : APS, 1970 67(2003), 19 Online-Ressource (DE-627)NLEJ248237845 (DE-600)1473011-X 1550-235X nnns volume:67 year:2003 number:19 extent:7 https://www.tib.eu/de/suchen/id/aps%3Ac973fd30dd7ae9d495c1f5a2386eda148bddcac3 Verlag Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-APS GBV_NL_ARTICLE AR 67 2003 19 7 |
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(DE-627)NLEJ248693425 (DE-601)aps:c973fd30dd7ae9d495c1f5a2386eda148bddcac3 DE-627 ger DE-627 rakwb Quantum behavior in nanoscale ballistic rectifiers and artificial materials 2003 Online-Ressource 7 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Low-temperature experiments are performed on nanoscale nonlinear devices (ballistic rectifiers) as well as nanostructured artificial materials, fabricated from an InP/InGaAs quantum well wafer. A dc output is generated between the lower and upper contacts of these devices, when an ac voltage is applied between the left and right contacts. As the temperature is lowered from room temperature, the dc output voltage of the ballistic rectifiers gradually changes from negative to positive. Since the negative output at high temperatures has been well understood in the framework of the classical ballistic electron transport, our results indicate that the electron transport comes into a different physical regime at low temperatures. Furthermore, we find that at even lower temperatures, the devices generate a pronounced oscillatory output as a function of the applied bias. Very similar phenomena are observed in the artificial nanomaterials, suggesting the existence of a common mechanism. We present a simple model based on quantum transport, which explains the key phenomena that we have observed at low temperatures. APS Digital Backfile Archive 1893-2003 Löfgren, A. oth Shorubalko, I. oth Omling, P. oth Song, A. M. oth Enthalten in Physical review / B College Park, Md. : APS, 1970 67(2003), 19 Online-Ressource (DE-627)NLEJ248237845 (DE-600)1473011-X 1550-235X nnns volume:67 year:2003 number:19 extent:7 https://www.tib.eu/de/suchen/id/aps%3Ac973fd30dd7ae9d495c1f5a2386eda148bddcac3 Verlag Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-APS GBV_NL_ARTICLE AR 67 2003 19 7 |
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(DE-627)NLEJ248693425 (DE-601)aps:c973fd30dd7ae9d495c1f5a2386eda148bddcac3 DE-627 ger DE-627 rakwb Quantum behavior in nanoscale ballistic rectifiers and artificial materials 2003 Online-Ressource 7 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Low-temperature experiments are performed on nanoscale nonlinear devices (ballistic rectifiers) as well as nanostructured artificial materials, fabricated from an InP/InGaAs quantum well wafer. A dc output is generated between the lower and upper contacts of these devices, when an ac voltage is applied between the left and right contacts. As the temperature is lowered from room temperature, the dc output voltage of the ballistic rectifiers gradually changes from negative to positive. Since the negative output at high temperatures has been well understood in the framework of the classical ballistic electron transport, our results indicate that the electron transport comes into a different physical regime at low temperatures. Furthermore, we find that at even lower temperatures, the devices generate a pronounced oscillatory output as a function of the applied bias. Very similar phenomena are observed in the artificial nanomaterials, suggesting the existence of a common mechanism. We present a simple model based on quantum transport, which explains the key phenomena that we have observed at low temperatures. APS Digital Backfile Archive 1893-2003 Löfgren, A. oth Shorubalko, I. oth Omling, P. oth Song, A. M. oth Enthalten in Physical review / B College Park, Md. : APS, 1970 67(2003), 19 Online-Ressource (DE-627)NLEJ248237845 (DE-600)1473011-X 1550-235X nnns volume:67 year:2003 number:19 extent:7 https://www.tib.eu/de/suchen/id/aps%3Ac973fd30dd7ae9d495c1f5a2386eda148bddcac3 Verlag Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-APS GBV_NL_ARTICLE AR 67 2003 19 7 |
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Low-temperature experiments are performed on nanoscale nonlinear devices (ballistic rectifiers) as well as nanostructured artificial materials, fabricated from an InP/InGaAs quantum well wafer. A dc output is generated between the lower and upper contacts of these devices, when an ac voltage is applied between the left and right contacts. As the temperature is lowered from room temperature, the dc output voltage of the ballistic rectifiers gradually changes from negative to positive. Since the negative output at high temperatures has been well understood in the framework of the classical ballistic electron transport, our results indicate that the electron transport comes into a different physical regime at low temperatures. Furthermore, we find that at even lower temperatures, the devices generate a pronounced oscillatory output as a function of the applied bias. Very similar phenomena are observed in the artificial nanomaterials, suggesting the existence of a common mechanism. We present a simple model based on quantum transport, which explains the key phenomena that we have observed at low temperatures. |
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Low-temperature experiments are performed on nanoscale nonlinear devices (ballistic rectifiers) as well as nanostructured artificial materials, fabricated from an InP/InGaAs quantum well wafer. A dc output is generated between the lower and upper contacts of these devices, when an ac voltage is applied between the left and right contacts. As the temperature is lowered from room temperature, the dc output voltage of the ballistic rectifiers gradually changes from negative to positive. Since the negative output at high temperatures has been well understood in the framework of the classical ballistic electron transport, our results indicate that the electron transport comes into a different physical regime at low temperatures. Furthermore, we find that at even lower temperatures, the devices generate a pronounced oscillatory output as a function of the applied bias. Very similar phenomena are observed in the artificial nanomaterials, suggesting the existence of a common mechanism. We present a simple model based on quantum transport, which explains the key phenomena that we have observed at low temperatures. |
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Low-temperature experiments are performed on nanoscale nonlinear devices (ballistic rectifiers) as well as nanostructured artificial materials, fabricated from an InP/InGaAs quantum well wafer. A dc output is generated between the lower and upper contacts of these devices, when an ac voltage is applied between the left and right contacts. As the temperature is lowered from room temperature, the dc output voltage of the ballistic rectifiers gradually changes from negative to positive. Since the negative output at high temperatures has been well understood in the framework of the classical ballistic electron transport, our results indicate that the electron transport comes into a different physical regime at low temperatures. Furthermore, we find that at even lower temperatures, the devices generate a pronounced oscillatory output as a function of the applied bias. Very similar phenomena are observed in the artificial nanomaterials, suggesting the existence of a common mechanism. We present a simple model based on quantum transport, which explains the key phenomena that we have observed at low temperatures. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000naa a22002652 4500</leader><controlfield tag="001">NLEJ248693425</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20231114095933.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">231114s2003 xx |||||o 00| ||und c</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)NLEJ248693425</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-601)aps:c973fd30dd7ae9d495c1f5a2386eda148bddcac3</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Quantum behavior in nanoscale ballistic rectifiers and artificial materials</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2003</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">7</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Low-temperature experiments are performed on nanoscale nonlinear devices (ballistic rectifiers) as well as nanostructured artificial materials, fabricated from an InP/InGaAs quantum well wafer. A dc output is generated between the lower and upper contacts of these devices, when an ac voltage is applied between the left and right contacts. As the temperature is lowered from room temperature, the dc output voltage of the ballistic rectifiers gradually changes from negative to positive. Since the negative output at high temperatures has been well understood in the framework of the classical ballistic electron transport, our results indicate that the electron transport comes into a different physical regime at low temperatures. Furthermore, we find that at even lower temperatures, the devices generate a pronounced oscillatory output as a function of the applied bias. Very similar phenomena are observed in the artificial nanomaterials, suggesting the existence of a common mechanism. We present a simple model based on quantum transport, which explains the key phenomena that we have observed at low temperatures.</subfield></datafield><datafield tag="533" ind1=" " ind2=" "><subfield code="f">APS Digital Backfile Archive 1893-2003</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Löfgren, A.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Shorubalko, I.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Omling, P.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Song, A. M.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Physical review / B</subfield><subfield code="d">College Park, Md. : APS, 1970</subfield><subfield code="g">67(2003), 19</subfield><subfield code="h">Online-Ressource</subfield><subfield code="w">(DE-627)NLEJ248237845</subfield><subfield code="w">(DE-600)1473011-X</subfield><subfield code="x">1550-235X</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:67</subfield><subfield code="g">year:2003</subfield><subfield code="g">number:19</subfield><subfield code="g">extent:7</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://www.tib.eu/de/suchen/id/aps%3Ac973fd30dd7ae9d495c1f5a2386eda148bddcac3</subfield><subfield code="x">Verlag</subfield><subfield code="z">Deutschlandweit zugänglich</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-1-APS</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_NL_ARTICLE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">67</subfield><subfield code="j">2003</subfield><subfield code="e">19</subfield><subfield code="g">7</subfield></datafield></record></collection>
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