Modeling of strained quantum wires using eight-band k⋅p theory
We have calculated numerically the one-dimensional band structure and densities of states of a V-shaped In0.2Ga0.8As/AlxGa1-xAs single quantum wire using eight-band k⋅p theory. A finite-difference scheme is used for the calculations. The model includes the realistic orientation, shape, material comp...
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E-Artikel |
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1997 |
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Online-Ressource 7 |
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APS Digital Backfile Archive 1893-2003 |
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| Übergeordnetes Werk: |
Enthalten in: Physical review / B - College Park, Md. : APS, 1970, 55(1997), 12, Seite 7726-7732 |
| Übergeordnetes Werk: |
volume:55 ; year:1997 ; number:12 ; pages:7726-7732 ; extent:7 |
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| 520 | |a We have calculated numerically the one-dimensional band structure and densities of states of a V-shaped In0.2Ga0.8As/AlxGa1-xAs single quantum wire using eight-band k⋅p theory. A finite-difference scheme is used for the calculations. The model includes the realistic orientation, shape, material composition, strain distribution, and piezoelectric charging of the wire. We find a dominant impact of the piezoelectric potential on the band structure and a marked spin splitting of the valence bands. Also, the conduction band is strongly nonparabolic. We propose an efficient procedure to calculate interior eigenvectors from Hamiltonians including conduction-band–valence-band interactions. This algorithm is 20–90 times faster than the best prevailing method and also applies to other Hamiltonians for the modeling of nanostructures, including those occurring in tight-binding or pseudopotential theory. | ||
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(DE-627)NLEJ248996088 (DE-601)aps:be63418e40da1bb1ffebd5e30ce66dc9d3f65db8 DE-627 ger DE-627 rakwb Modeling of strained quantum wires using eight-band k⋅p theory 1997 Online-Ressource 7 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We have calculated numerically the one-dimensional band structure and densities of states of a V-shaped In0.2Ga0.8As/AlxGa1-xAs single quantum wire using eight-band k⋅p theory. A finite-difference scheme is used for the calculations. The model includes the realistic orientation, shape, material composition, strain distribution, and piezoelectric charging of the wire. We find a dominant impact of the piezoelectric potential on the band structure and a marked spin splitting of the valence bands. Also, the conduction band is strongly nonparabolic. We propose an efficient procedure to calculate interior eigenvectors from Hamiltonians including conduction-band–valence-band interactions. This algorithm is 20–90 times faster than the best prevailing method and also applies to other Hamiltonians for the modeling of nanostructures, including those occurring in tight-binding or pseudopotential theory. APS Digital Backfile Archive 1893-2003 Stier, O. oth Bimberg, D. oth Enthalten in Physical review / B College Park, Md. : APS, 1970 55(1997), 12, Seite 7726-7732 Online-Ressource (DE-627)NLEJ248237845 (DE-600)1473011-X 1550-235X nnns volume:55 year:1997 number:12 pages:7726-7732 extent:7 https://www.tib.eu/de/suchen/id/aps%3Abe63418e40da1bb1ffebd5e30ce66dc9d3f65db8 Verlag Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-APS GBV_NL_ARTICLE AR 55 1997 12 7726-7732 7 |
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(DE-627)NLEJ248996088 (DE-601)aps:be63418e40da1bb1ffebd5e30ce66dc9d3f65db8 DE-627 ger DE-627 rakwb Modeling of strained quantum wires using eight-band k⋅p theory 1997 Online-Ressource 7 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We have calculated numerically the one-dimensional band structure and densities of states of a V-shaped In0.2Ga0.8As/AlxGa1-xAs single quantum wire using eight-band k⋅p theory. A finite-difference scheme is used for the calculations. The model includes the realistic orientation, shape, material composition, strain distribution, and piezoelectric charging of the wire. We find a dominant impact of the piezoelectric potential on the band structure and a marked spin splitting of the valence bands. Also, the conduction band is strongly nonparabolic. We propose an efficient procedure to calculate interior eigenvectors from Hamiltonians including conduction-band–valence-band interactions. This algorithm is 20–90 times faster than the best prevailing method and also applies to other Hamiltonians for the modeling of nanostructures, including those occurring in tight-binding or pseudopotential theory. APS Digital Backfile Archive 1893-2003 Stier, O. oth Bimberg, D. oth Enthalten in Physical review / B College Park, Md. : APS, 1970 55(1997), 12, Seite 7726-7732 Online-Ressource (DE-627)NLEJ248237845 (DE-600)1473011-X 1550-235X nnns volume:55 year:1997 number:12 pages:7726-7732 extent:7 https://www.tib.eu/de/suchen/id/aps%3Abe63418e40da1bb1ffebd5e30ce66dc9d3f65db8 Verlag Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-APS GBV_NL_ARTICLE AR 55 1997 12 7726-7732 7 |
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(DE-627)NLEJ248996088 (DE-601)aps:be63418e40da1bb1ffebd5e30ce66dc9d3f65db8 DE-627 ger DE-627 rakwb Modeling of strained quantum wires using eight-band k⋅p theory 1997 Online-Ressource 7 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We have calculated numerically the one-dimensional band structure and densities of states of a V-shaped In0.2Ga0.8As/AlxGa1-xAs single quantum wire using eight-band k⋅p theory. A finite-difference scheme is used for the calculations. The model includes the realistic orientation, shape, material composition, strain distribution, and piezoelectric charging of the wire. We find a dominant impact of the piezoelectric potential on the band structure and a marked spin splitting of the valence bands. Also, the conduction band is strongly nonparabolic. We propose an efficient procedure to calculate interior eigenvectors from Hamiltonians including conduction-band–valence-band interactions. This algorithm is 20–90 times faster than the best prevailing method and also applies to other Hamiltonians for the modeling of nanostructures, including those occurring in tight-binding or pseudopotential theory. APS Digital Backfile Archive 1893-2003 Stier, O. oth Bimberg, D. oth Enthalten in Physical review / B College Park, Md. : APS, 1970 55(1997), 12, Seite 7726-7732 Online-Ressource (DE-627)NLEJ248237845 (DE-600)1473011-X 1550-235X nnns volume:55 year:1997 number:12 pages:7726-7732 extent:7 https://www.tib.eu/de/suchen/id/aps%3Abe63418e40da1bb1ffebd5e30ce66dc9d3f65db8 Verlag Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-APS GBV_NL_ARTICLE AR 55 1997 12 7726-7732 7 |
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(DE-627)NLEJ248996088 (DE-601)aps:be63418e40da1bb1ffebd5e30ce66dc9d3f65db8 DE-627 ger DE-627 rakwb Modeling of strained quantum wires using eight-band k⋅p theory 1997 Online-Ressource 7 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We have calculated numerically the one-dimensional band structure and densities of states of a V-shaped In0.2Ga0.8As/AlxGa1-xAs single quantum wire using eight-band k⋅p theory. A finite-difference scheme is used for the calculations. The model includes the realistic orientation, shape, material composition, strain distribution, and piezoelectric charging of the wire. We find a dominant impact of the piezoelectric potential on the band structure and a marked spin splitting of the valence bands. Also, the conduction band is strongly nonparabolic. We propose an efficient procedure to calculate interior eigenvectors from Hamiltonians including conduction-band–valence-band interactions. This algorithm is 20–90 times faster than the best prevailing method and also applies to other Hamiltonians for the modeling of nanostructures, including those occurring in tight-binding or pseudopotential theory. APS Digital Backfile Archive 1893-2003 Stier, O. oth Bimberg, D. oth Enthalten in Physical review / B College Park, Md. : APS, 1970 55(1997), 12, Seite 7726-7732 Online-Ressource (DE-627)NLEJ248237845 (DE-600)1473011-X 1550-235X nnns volume:55 year:1997 number:12 pages:7726-7732 extent:7 https://www.tib.eu/de/suchen/id/aps%3Abe63418e40da1bb1ffebd5e30ce66dc9d3f65db8 Verlag Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-APS GBV_NL_ARTICLE AR 55 1997 12 7726-7732 7 |
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(DE-627)NLEJ248996088 (DE-601)aps:be63418e40da1bb1ffebd5e30ce66dc9d3f65db8 DE-627 ger DE-627 rakwb Modeling of strained quantum wires using eight-band k⋅p theory 1997 Online-Ressource 7 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We have calculated numerically the one-dimensional band structure and densities of states of a V-shaped In0.2Ga0.8As/AlxGa1-xAs single quantum wire using eight-band k⋅p theory. A finite-difference scheme is used for the calculations. The model includes the realistic orientation, shape, material composition, strain distribution, and piezoelectric charging of the wire. We find a dominant impact of the piezoelectric potential on the band structure and a marked spin splitting of the valence bands. Also, the conduction band is strongly nonparabolic. We propose an efficient procedure to calculate interior eigenvectors from Hamiltonians including conduction-band–valence-band interactions. This algorithm is 20–90 times faster than the best prevailing method and also applies to other Hamiltonians for the modeling of nanostructures, including those occurring in tight-binding or pseudopotential theory. APS Digital Backfile Archive 1893-2003 Stier, O. oth Bimberg, D. oth Enthalten in Physical review / B College Park, Md. : APS, 1970 55(1997), 12, Seite 7726-7732 Online-Ressource (DE-627)NLEJ248237845 (DE-600)1473011-X 1550-235X nnns volume:55 year:1997 number:12 pages:7726-7732 extent:7 https://www.tib.eu/de/suchen/id/aps%3Abe63418e40da1bb1ffebd5e30ce66dc9d3f65db8 Verlag Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-APS GBV_NL_ARTICLE AR 55 1997 12 7726-7732 7 |
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modeling of strained quantum wires using eight-band k⋅p theory |
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Modeling of strained quantum wires using eight-band k⋅p theory |
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We have calculated numerically the one-dimensional band structure and densities of states of a V-shaped In0.2Ga0.8As/AlxGa1-xAs single quantum wire using eight-band k⋅p theory. A finite-difference scheme is used for the calculations. The model includes the realistic orientation, shape, material composition, strain distribution, and piezoelectric charging of the wire. We find a dominant impact of the piezoelectric potential on the band structure and a marked spin splitting of the valence bands. Also, the conduction band is strongly nonparabolic. We propose an efficient procedure to calculate interior eigenvectors from Hamiltonians including conduction-band–valence-band interactions. This algorithm is 20–90 times faster than the best prevailing method and also applies to other Hamiltonians for the modeling of nanostructures, including those occurring in tight-binding or pseudopotential theory. |
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We have calculated numerically the one-dimensional band structure and densities of states of a V-shaped In0.2Ga0.8As/AlxGa1-xAs single quantum wire using eight-band k⋅p theory. A finite-difference scheme is used for the calculations. The model includes the realistic orientation, shape, material composition, strain distribution, and piezoelectric charging of the wire. We find a dominant impact of the piezoelectric potential on the band structure and a marked spin splitting of the valence bands. Also, the conduction band is strongly nonparabolic. We propose an efficient procedure to calculate interior eigenvectors from Hamiltonians including conduction-band–valence-band interactions. This algorithm is 20–90 times faster than the best prevailing method and also applies to other Hamiltonians for the modeling of nanostructures, including those occurring in tight-binding or pseudopotential theory. |
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We have calculated numerically the one-dimensional band structure and densities of states of a V-shaped In0.2Ga0.8As/AlxGa1-xAs single quantum wire using eight-band k⋅p theory. A finite-difference scheme is used for the calculations. The model includes the realistic orientation, shape, material composition, strain distribution, and piezoelectric charging of the wire. We find a dominant impact of the piezoelectric potential on the band structure and a marked spin splitting of the valence bands. Also, the conduction band is strongly nonparabolic. We propose an efficient procedure to calculate interior eigenvectors from Hamiltonians including conduction-band–valence-band interactions. This algorithm is 20–90 times faster than the best prevailing method and also applies to other Hamiltonians for the modeling of nanostructures, including those occurring in tight-binding or pseudopotential theory. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000naa a22002652 4500</leader><controlfield tag="001">NLEJ248996088</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20231114100706.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">231114s1997 xx |||||o 00| ||und c</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)NLEJ248996088</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-601)aps:be63418e40da1bb1ffebd5e30ce66dc9d3f65db8</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Modeling of strained quantum wires using eight-band k⋅p theory</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1997</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">7</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">We have calculated numerically the one-dimensional band structure and densities of states of a V-shaped In0.2Ga0.8As/AlxGa1-xAs single quantum wire using eight-band k⋅p theory. A finite-difference scheme is used for the calculations. The model includes the realistic orientation, shape, material composition, strain distribution, and piezoelectric charging of the wire. We find a dominant impact of the piezoelectric potential on the band structure and a marked spin splitting of the valence bands. Also, the conduction band is strongly nonparabolic. We propose an efficient procedure to calculate interior eigenvectors from Hamiltonians including conduction-band–valence-band interactions. This algorithm is 20–90 times faster than the best prevailing method and also applies to other Hamiltonians for the modeling of nanostructures, including those occurring in tight-binding or pseudopotential theory.</subfield></datafield><datafield tag="533" ind1=" " ind2=" "><subfield code="f">APS Digital Backfile Archive 1893-2003</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Stier, O.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Bimberg, D.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Physical review / B</subfield><subfield code="d">College Park, Md. : APS, 1970</subfield><subfield code="g">55(1997), 12, Seite 7726-7732</subfield><subfield code="h">Online-Ressource</subfield><subfield code="w">(DE-627)NLEJ248237845</subfield><subfield code="w">(DE-600)1473011-X</subfield><subfield code="x">1550-235X</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:55</subfield><subfield code="g">year:1997</subfield><subfield code="g">number:12</subfield><subfield code="g">pages:7726-7732</subfield><subfield code="g">extent:7</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://www.tib.eu/de/suchen/id/aps%3Abe63418e40da1bb1ffebd5e30ce66dc9d3f65db8</subfield><subfield code="x">Verlag</subfield><subfield code="z">Deutschlandweit zugänglich</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-1-APS</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_NL_ARTICLE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">55</subfield><subfield code="j">1997</subfield><subfield code="e">12</subfield><subfield code="h">7726-7732</subfield><subfield code="g">7</subfield></datafield></record></collection>
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7.401354 |