InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure
The strain distribution in and around pyramidal InAs/GaAs quantum dots (QD’s) on a thin wetting layer fabricated recently with molecular-beam epitaxy, is simulated numerically. For comparison analytical solutions for the strain distribution in and around a pseudomorphic slab, cylinder, and sphere ar...
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1995 |
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Online-Ressource 13 |
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APS Digital Backfile Archive 1893-2003 |
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Enthalten in: Physical review / B - College Park, Md. : APS, 1970, 52(1995), 16, Seite 11969-11981 |
| Übergeordnetes Werk: |
volume:52 ; year:1995 ; number:16 ; pages:11969-11981 ; extent:13 |
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| 520 | |a The strain distribution in and around pyramidal InAs/GaAs quantum dots (QD’s) on a thin wetting layer fabricated recently with molecular-beam epitaxy, is simulated numerically. For comparison analytical solutions for the strain distribution in and around a pseudomorphic slab, cylinder, and sphere are given for isotropic materials, representing a guideline for the understanding of strain distribution in two-, one-, and zero-dimensional pseudomorphic nanostructures. For the pyramidal dots we find that the hydrostatic strain is mostly confined in the QD; in contrast part of the anisotropic strain is transferred from the QD into the barrier. The optical-phonon energies in the QD are estimated and agree perfectly with recent experimental findings. From the variation of the strain tensor the local band-gap modification is calculated. Piezoelectric effects are additionally taken into account. The three-dimensional effective-mass single-particle Schrödinger equation is solved for electrons and holes using the realistic confinement potentials. Since the QD’s are in the strong confinement regime, the Coulomb interaction can be treated as a perturbation. The thus obtained electronic structure agrees with luminescence data. Additionally AlAs barriers are considered. | ||
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(DE-627)NLEJ249063271 (DE-601)aps:238f4b1458797b84508dfb83b4029a60f8b5e177 DE-627 ger DE-627 rakwb InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure 1995 Online-Ressource 13 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The strain distribution in and around pyramidal InAs/GaAs quantum dots (QD’s) on a thin wetting layer fabricated recently with molecular-beam epitaxy, is simulated numerically. For comparison analytical solutions for the strain distribution in and around a pseudomorphic slab, cylinder, and sphere are given for isotropic materials, representing a guideline for the understanding of strain distribution in two-, one-, and zero-dimensional pseudomorphic nanostructures. For the pyramidal dots we find that the hydrostatic strain is mostly confined in the QD; in contrast part of the anisotropic strain is transferred from the QD into the barrier. The optical-phonon energies in the QD are estimated and agree perfectly with recent experimental findings. From the variation of the strain tensor the local band-gap modification is calculated. Piezoelectric effects are additionally taken into account. The three-dimensional effective-mass single-particle Schrödinger equation is solved for electrons and holes using the realistic confinement potentials. Since the QD’s are in the strong confinement regime, the Coulomb interaction can be treated as a perturbation. The thus obtained electronic structure agrees with luminescence data. Additionally AlAs barriers are considered. APS Digital Backfile Archive 1893-2003 Grundmann, M. oth Stier, O. oth Bimberg, D. oth Enthalten in Physical review / B College Park, Md. : APS, 1970 52(1995), 16, Seite 11969-11981 Online-Ressource (DE-627)NLEJ248237845 (DE-600)1473011-X 1550-235X nnns volume:52 year:1995 number:16 pages:11969-11981 extent:13 https://www.tib.eu/de/suchen/id/aps%3A238f4b1458797b84508dfb83b4029a60f8b5e177 Verlag Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-APS GBV_NL_ARTICLE AR 52 1995 16 11969-11981 13 |
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(DE-627)NLEJ249063271 (DE-601)aps:238f4b1458797b84508dfb83b4029a60f8b5e177 DE-627 ger DE-627 rakwb InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure 1995 Online-Ressource 13 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The strain distribution in and around pyramidal InAs/GaAs quantum dots (QD’s) on a thin wetting layer fabricated recently with molecular-beam epitaxy, is simulated numerically. For comparison analytical solutions for the strain distribution in and around a pseudomorphic slab, cylinder, and sphere are given for isotropic materials, representing a guideline for the understanding of strain distribution in two-, one-, and zero-dimensional pseudomorphic nanostructures. For the pyramidal dots we find that the hydrostatic strain is mostly confined in the QD; in contrast part of the anisotropic strain is transferred from the QD into the barrier. The optical-phonon energies in the QD are estimated and agree perfectly with recent experimental findings. From the variation of the strain tensor the local band-gap modification is calculated. Piezoelectric effects are additionally taken into account. The three-dimensional effective-mass single-particle Schrödinger equation is solved for electrons and holes using the realistic confinement potentials. Since the QD’s are in the strong confinement regime, the Coulomb interaction can be treated as a perturbation. The thus obtained electronic structure agrees with luminescence data. Additionally AlAs barriers are considered. APS Digital Backfile Archive 1893-2003 Grundmann, M. oth Stier, O. oth Bimberg, D. oth Enthalten in Physical review / B College Park, Md. : APS, 1970 52(1995), 16, Seite 11969-11981 Online-Ressource (DE-627)NLEJ248237845 (DE-600)1473011-X 1550-235X nnns volume:52 year:1995 number:16 pages:11969-11981 extent:13 https://www.tib.eu/de/suchen/id/aps%3A238f4b1458797b84508dfb83b4029a60f8b5e177 Verlag Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-APS GBV_NL_ARTICLE AR 52 1995 16 11969-11981 13 |
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(DE-627)NLEJ249063271 (DE-601)aps:238f4b1458797b84508dfb83b4029a60f8b5e177 DE-627 ger DE-627 rakwb InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure 1995 Online-Ressource 13 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The strain distribution in and around pyramidal InAs/GaAs quantum dots (QD’s) on a thin wetting layer fabricated recently with molecular-beam epitaxy, is simulated numerically. For comparison analytical solutions for the strain distribution in and around a pseudomorphic slab, cylinder, and sphere are given for isotropic materials, representing a guideline for the understanding of strain distribution in two-, one-, and zero-dimensional pseudomorphic nanostructures. For the pyramidal dots we find that the hydrostatic strain is mostly confined in the QD; in contrast part of the anisotropic strain is transferred from the QD into the barrier. The optical-phonon energies in the QD are estimated and agree perfectly with recent experimental findings. From the variation of the strain tensor the local band-gap modification is calculated. Piezoelectric effects are additionally taken into account. The three-dimensional effective-mass single-particle Schrödinger equation is solved for electrons and holes using the realistic confinement potentials. Since the QD’s are in the strong confinement regime, the Coulomb interaction can be treated as a perturbation. The thus obtained electronic structure agrees with luminescence data. Additionally AlAs barriers are considered. APS Digital Backfile Archive 1893-2003 Grundmann, M. oth Stier, O. oth Bimberg, D. oth Enthalten in Physical review / B College Park, Md. : APS, 1970 52(1995), 16, Seite 11969-11981 Online-Ressource (DE-627)NLEJ248237845 (DE-600)1473011-X 1550-235X nnns volume:52 year:1995 number:16 pages:11969-11981 extent:13 https://www.tib.eu/de/suchen/id/aps%3A238f4b1458797b84508dfb83b4029a60f8b5e177 Verlag Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-APS GBV_NL_ARTICLE AR 52 1995 16 11969-11981 13 |
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(DE-627)NLEJ249063271 (DE-601)aps:238f4b1458797b84508dfb83b4029a60f8b5e177 DE-627 ger DE-627 rakwb InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure 1995 Online-Ressource 13 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The strain distribution in and around pyramidal InAs/GaAs quantum dots (QD’s) on a thin wetting layer fabricated recently with molecular-beam epitaxy, is simulated numerically. For comparison analytical solutions for the strain distribution in and around a pseudomorphic slab, cylinder, and sphere are given for isotropic materials, representing a guideline for the understanding of strain distribution in two-, one-, and zero-dimensional pseudomorphic nanostructures. For the pyramidal dots we find that the hydrostatic strain is mostly confined in the QD; in contrast part of the anisotropic strain is transferred from the QD into the barrier. The optical-phonon energies in the QD are estimated and agree perfectly with recent experimental findings. From the variation of the strain tensor the local band-gap modification is calculated. Piezoelectric effects are additionally taken into account. The three-dimensional effective-mass single-particle Schrödinger equation is solved for electrons and holes using the realistic confinement potentials. Since the QD’s are in the strong confinement regime, the Coulomb interaction can be treated as a perturbation. The thus obtained electronic structure agrees with luminescence data. Additionally AlAs barriers are considered. APS Digital Backfile Archive 1893-2003 Grundmann, M. oth Stier, O. oth Bimberg, D. oth Enthalten in Physical review / B College Park, Md. : APS, 1970 52(1995), 16, Seite 11969-11981 Online-Ressource (DE-627)NLEJ248237845 (DE-600)1473011-X 1550-235X nnns volume:52 year:1995 number:16 pages:11969-11981 extent:13 https://www.tib.eu/de/suchen/id/aps%3A238f4b1458797b84508dfb83b4029a60f8b5e177 Verlag Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-APS GBV_NL_ARTICLE AR 52 1995 16 11969-11981 13 |
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(DE-627)NLEJ249063271 (DE-601)aps:238f4b1458797b84508dfb83b4029a60f8b5e177 DE-627 ger DE-627 rakwb InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure 1995 Online-Ressource 13 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The strain distribution in and around pyramidal InAs/GaAs quantum dots (QD’s) on a thin wetting layer fabricated recently with molecular-beam epitaxy, is simulated numerically. For comparison analytical solutions for the strain distribution in and around a pseudomorphic slab, cylinder, and sphere are given for isotropic materials, representing a guideline for the understanding of strain distribution in two-, one-, and zero-dimensional pseudomorphic nanostructures. For the pyramidal dots we find that the hydrostatic strain is mostly confined in the QD; in contrast part of the anisotropic strain is transferred from the QD into the barrier. The optical-phonon energies in the QD are estimated and agree perfectly with recent experimental findings. From the variation of the strain tensor the local band-gap modification is calculated. Piezoelectric effects are additionally taken into account. The three-dimensional effective-mass single-particle Schrödinger equation is solved for electrons and holes using the realistic confinement potentials. Since the QD’s are in the strong confinement regime, the Coulomb interaction can be treated as a perturbation. The thus obtained electronic structure agrees with luminescence data. Additionally AlAs barriers are considered. APS Digital Backfile Archive 1893-2003 Grundmann, M. oth Stier, O. oth Bimberg, D. oth Enthalten in Physical review / B College Park, Md. : APS, 1970 52(1995), 16, Seite 11969-11981 Online-Ressource (DE-627)NLEJ248237845 (DE-600)1473011-X 1550-235X nnns volume:52 year:1995 number:16 pages:11969-11981 extent:13 https://www.tib.eu/de/suchen/id/aps%3A238f4b1458797b84508dfb83b4029a60f8b5e177 Verlag Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-APS GBV_NL_ARTICLE AR 52 1995 16 11969-11981 13 |
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inas/gaas pyramidal quantum dots: strain distribution, optical phonons, and electronic structure |
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InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure |
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The strain distribution in and around pyramidal InAs/GaAs quantum dots (QD’s) on a thin wetting layer fabricated recently with molecular-beam epitaxy, is simulated numerically. For comparison analytical solutions for the strain distribution in and around a pseudomorphic slab, cylinder, and sphere are given for isotropic materials, representing a guideline for the understanding of strain distribution in two-, one-, and zero-dimensional pseudomorphic nanostructures. For the pyramidal dots we find that the hydrostatic strain is mostly confined in the QD; in contrast part of the anisotropic strain is transferred from the QD into the barrier. The optical-phonon energies in the QD are estimated and agree perfectly with recent experimental findings. From the variation of the strain tensor the local band-gap modification is calculated. Piezoelectric effects are additionally taken into account. The three-dimensional effective-mass single-particle Schrödinger equation is solved for electrons and holes using the realistic confinement potentials. Since the QD’s are in the strong confinement regime, the Coulomb interaction can be treated as a perturbation. The thus obtained electronic structure agrees with luminescence data. Additionally AlAs barriers are considered. |
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The strain distribution in and around pyramidal InAs/GaAs quantum dots (QD’s) on a thin wetting layer fabricated recently with molecular-beam epitaxy, is simulated numerically. For comparison analytical solutions for the strain distribution in and around a pseudomorphic slab, cylinder, and sphere are given for isotropic materials, representing a guideline for the understanding of strain distribution in two-, one-, and zero-dimensional pseudomorphic nanostructures. For the pyramidal dots we find that the hydrostatic strain is mostly confined in the QD; in contrast part of the anisotropic strain is transferred from the QD into the barrier. The optical-phonon energies in the QD are estimated and agree perfectly with recent experimental findings. From the variation of the strain tensor the local band-gap modification is calculated. Piezoelectric effects are additionally taken into account. The three-dimensional effective-mass single-particle Schrödinger equation is solved for electrons and holes using the realistic confinement potentials. Since the QD’s are in the strong confinement regime, the Coulomb interaction can be treated as a perturbation. The thus obtained electronic structure agrees with luminescence data. Additionally AlAs barriers are considered. |
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The strain distribution in and around pyramidal InAs/GaAs quantum dots (QD’s) on a thin wetting layer fabricated recently with molecular-beam epitaxy, is simulated numerically. For comparison analytical solutions for the strain distribution in and around a pseudomorphic slab, cylinder, and sphere are given for isotropic materials, representing a guideline for the understanding of strain distribution in two-, one-, and zero-dimensional pseudomorphic nanostructures. For the pyramidal dots we find that the hydrostatic strain is mostly confined in the QD; in contrast part of the anisotropic strain is transferred from the QD into the barrier. The optical-phonon energies in the QD are estimated and agree perfectly with recent experimental findings. From the variation of the strain tensor the local band-gap modification is calculated. Piezoelectric effects are additionally taken into account. The three-dimensional effective-mass single-particle Schrödinger equation is solved for electrons and holes using the realistic confinement potentials. Since the QD’s are in the strong confinement regime, the Coulomb interaction can be treated as a perturbation. The thus obtained electronic structure agrees with luminescence data. Additionally AlAs barriers are considered. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000naa a22002652 4500</leader><controlfield tag="001">NLEJ249063271</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20231114100853.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">231114s1995 xx |||||o 00| ||und c</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)NLEJ249063271</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-601)aps:238f4b1458797b84508dfb83b4029a60f8b5e177</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1995</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">13</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">The strain distribution in and around pyramidal InAs/GaAs quantum dots (QD’s) on a thin wetting layer fabricated recently with molecular-beam epitaxy, is simulated numerically. For comparison analytical solutions for the strain distribution in and around a pseudomorphic slab, cylinder, and sphere are given for isotropic materials, representing a guideline for the understanding of strain distribution in two-, one-, and zero-dimensional pseudomorphic nanostructures. For the pyramidal dots we find that the hydrostatic strain is mostly confined in the QD; in contrast part of the anisotropic strain is transferred from the QD into the barrier. The optical-phonon energies in the QD are estimated and agree perfectly with recent experimental findings. From the variation of the strain tensor the local band-gap modification is calculated. Piezoelectric effects are additionally taken into account. The three-dimensional effective-mass single-particle Schrödinger equation is solved for electrons and holes using the realistic confinement potentials. Since the QD’s are in the strong confinement regime, the Coulomb interaction can be treated as a perturbation. The thus obtained electronic structure agrees with luminescence data. 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