Theory on STM images of Si(001) surface near defects
We study the influence of surface defects on the structure of a Si(001) surface by statistical mechanical calculations based on an asymmetric dimer model. Recently, the local influence of surface defects has been identified by the scanning tunneling microscope (STM). The arrangement of images of dim...
Ausführliche Beschreibung
Gespeichert in:
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| Format: |
E-Artikel |
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| Erschienen: |
1995 |
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| Umfang: |
Online-Ressource 8 |
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| Reproduktion: |
APS Digital Backfile Archive 1893-2003 |
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| Übergeordnetes Werk: |
Enthalten in: Physical review / B - College Park, Md. : APS, 1970, 52(1995), 11, Seite 8231-8238 |
| Übergeordnetes Werk: |
volume:52 ; year:1995 ; number:11 ; pages:8231-8238 ; extent:8 |
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| 520 | |a We study the influence of surface defects on the structure of a Si(001) surface by statistical mechanical calculations based on an asymmetric dimer model. Recently, the local influence of surface defects has been identified by the scanning tunneling microscope (STM). The arrangement of images of dimers near the defect is well reproduced both at low and at high temperature in the calculated STM image. We also find that, in a particular configuration of a few defects, the influence of the defects is much wider than the simple sum of isolated defects at low temperatures. This gives a reason why a wide region of symmetric-appearing images was observed in the area with rather low defect density in a low-temperature STM image. | ||
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(DE-627)NLEJ24906894X (DE-601)aps:3ed98549738776fe375db2d96a506e8f90ccb1a8 DE-627 ger DE-627 rakwb Theory on STM images of Si(001) surface near defects 1995 Online-Ressource 8 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We study the influence of surface defects on the structure of a Si(001) surface by statistical mechanical calculations based on an asymmetric dimer model. Recently, the local influence of surface defects has been identified by the scanning tunneling microscope (STM). The arrangement of images of dimers near the defect is well reproduced both at low and at high temperature in the calculated STM image. We also find that, in a particular configuration of a few defects, the influence of the defects is much wider than the simple sum of isolated defects at low temperatures. This gives a reason why a wide region of symmetric-appearing images was observed in the area with rather low defect density in a low-temperature STM image. APS Digital Backfile Archive 1893-2003 Nakamura, Yoshimichi oth Kawai, Hiroshi oth Nakayama, Masatoshi oth Enthalten in Physical review / B College Park, Md. : APS, 1970 52(1995), 11, Seite 8231-8238 Online-Ressource (DE-627)NLEJ248237845 (DE-600)1473011-X 1550-235X nnns volume:52 year:1995 number:11 pages:8231-8238 extent:8 https://www.tib.eu/de/suchen/id/aps%3A3ed98549738776fe375db2d96a506e8f90ccb1a8 Verlag Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-APS GBV_NL_ARTICLE AR 52 1995 11 8231-8238 8 |
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(DE-627)NLEJ24906894X (DE-601)aps:3ed98549738776fe375db2d96a506e8f90ccb1a8 DE-627 ger DE-627 rakwb Theory on STM images of Si(001) surface near defects 1995 Online-Ressource 8 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We study the influence of surface defects on the structure of a Si(001) surface by statistical mechanical calculations based on an asymmetric dimer model. Recently, the local influence of surface defects has been identified by the scanning tunneling microscope (STM). The arrangement of images of dimers near the defect is well reproduced both at low and at high temperature in the calculated STM image. We also find that, in a particular configuration of a few defects, the influence of the defects is much wider than the simple sum of isolated defects at low temperatures. This gives a reason why a wide region of symmetric-appearing images was observed in the area with rather low defect density in a low-temperature STM image. APS Digital Backfile Archive 1893-2003 Nakamura, Yoshimichi oth Kawai, Hiroshi oth Nakayama, Masatoshi oth Enthalten in Physical review / B College Park, Md. : APS, 1970 52(1995), 11, Seite 8231-8238 Online-Ressource (DE-627)NLEJ248237845 (DE-600)1473011-X 1550-235X nnns volume:52 year:1995 number:11 pages:8231-8238 extent:8 https://www.tib.eu/de/suchen/id/aps%3A3ed98549738776fe375db2d96a506e8f90ccb1a8 Verlag Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-APS GBV_NL_ARTICLE AR 52 1995 11 8231-8238 8 |
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(DE-627)NLEJ24906894X (DE-601)aps:3ed98549738776fe375db2d96a506e8f90ccb1a8 DE-627 ger DE-627 rakwb Theory on STM images of Si(001) surface near defects 1995 Online-Ressource 8 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We study the influence of surface defects on the structure of a Si(001) surface by statistical mechanical calculations based on an asymmetric dimer model. Recently, the local influence of surface defects has been identified by the scanning tunneling microscope (STM). The arrangement of images of dimers near the defect is well reproduced both at low and at high temperature in the calculated STM image. We also find that, in a particular configuration of a few defects, the influence of the defects is much wider than the simple sum of isolated defects at low temperatures. This gives a reason why a wide region of symmetric-appearing images was observed in the area with rather low defect density in a low-temperature STM image. APS Digital Backfile Archive 1893-2003 Nakamura, Yoshimichi oth Kawai, Hiroshi oth Nakayama, Masatoshi oth Enthalten in Physical review / B College Park, Md. : APS, 1970 52(1995), 11, Seite 8231-8238 Online-Ressource (DE-627)NLEJ248237845 (DE-600)1473011-X 1550-235X nnns volume:52 year:1995 number:11 pages:8231-8238 extent:8 https://www.tib.eu/de/suchen/id/aps%3A3ed98549738776fe375db2d96a506e8f90ccb1a8 Verlag Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-APS GBV_NL_ARTICLE AR 52 1995 11 8231-8238 8 |
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(DE-627)NLEJ24906894X (DE-601)aps:3ed98549738776fe375db2d96a506e8f90ccb1a8 DE-627 ger DE-627 rakwb Theory on STM images of Si(001) surface near defects 1995 Online-Ressource 8 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We study the influence of surface defects on the structure of a Si(001) surface by statistical mechanical calculations based on an asymmetric dimer model. Recently, the local influence of surface defects has been identified by the scanning tunneling microscope (STM). The arrangement of images of dimers near the defect is well reproduced both at low and at high temperature in the calculated STM image. We also find that, in a particular configuration of a few defects, the influence of the defects is much wider than the simple sum of isolated defects at low temperatures. This gives a reason why a wide region of symmetric-appearing images was observed in the area with rather low defect density in a low-temperature STM image. APS Digital Backfile Archive 1893-2003 Nakamura, Yoshimichi oth Kawai, Hiroshi oth Nakayama, Masatoshi oth Enthalten in Physical review / B College Park, Md. : APS, 1970 52(1995), 11, Seite 8231-8238 Online-Ressource (DE-627)NLEJ248237845 (DE-600)1473011-X 1550-235X nnns volume:52 year:1995 number:11 pages:8231-8238 extent:8 https://www.tib.eu/de/suchen/id/aps%3A3ed98549738776fe375db2d96a506e8f90ccb1a8 Verlag Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-APS GBV_NL_ARTICLE AR 52 1995 11 8231-8238 8 |
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(DE-627)NLEJ24906894X (DE-601)aps:3ed98549738776fe375db2d96a506e8f90ccb1a8 DE-627 ger DE-627 rakwb Theory on STM images of Si(001) surface near defects 1995 Online-Ressource 8 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We study the influence of surface defects on the structure of a Si(001) surface by statistical mechanical calculations based on an asymmetric dimer model. Recently, the local influence of surface defects has been identified by the scanning tunneling microscope (STM). The arrangement of images of dimers near the defect is well reproduced both at low and at high temperature in the calculated STM image. We also find that, in a particular configuration of a few defects, the influence of the defects is much wider than the simple sum of isolated defects at low temperatures. This gives a reason why a wide region of symmetric-appearing images was observed in the area with rather low defect density in a low-temperature STM image. APS Digital Backfile Archive 1893-2003 Nakamura, Yoshimichi oth Kawai, Hiroshi oth Nakayama, Masatoshi oth Enthalten in Physical review / B College Park, Md. : APS, 1970 52(1995), 11, Seite 8231-8238 Online-Ressource (DE-627)NLEJ248237845 (DE-600)1473011-X 1550-235X nnns volume:52 year:1995 number:11 pages:8231-8238 extent:8 https://www.tib.eu/de/suchen/id/aps%3A3ed98549738776fe375db2d96a506e8f90ccb1a8 Verlag Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-APS GBV_NL_ARTICLE AR 52 1995 11 8231-8238 8 |
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We study the influence of surface defects on the structure of a Si(001) surface by statistical mechanical calculations based on an asymmetric dimer model. Recently, the local influence of surface defects has been identified by the scanning tunneling microscope (STM). The arrangement of images of dimers near the defect is well reproduced both at low and at high temperature in the calculated STM image. We also find that, in a particular configuration of a few defects, the influence of the defects is much wider than the simple sum of isolated defects at low temperatures. This gives a reason why a wide region of symmetric-appearing images was observed in the area with rather low defect density in a low-temperature STM image. |
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We study the influence of surface defects on the structure of a Si(001) surface by statistical mechanical calculations based on an asymmetric dimer model. Recently, the local influence of surface defects has been identified by the scanning tunneling microscope (STM). The arrangement of images of dimers near the defect is well reproduced both at low and at high temperature in the calculated STM image. We also find that, in a particular configuration of a few defects, the influence of the defects is much wider than the simple sum of isolated defects at low temperatures. This gives a reason why a wide region of symmetric-appearing images was observed in the area with rather low defect density in a low-temperature STM image. |
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We study the influence of surface defects on the structure of a Si(001) surface by statistical mechanical calculations based on an asymmetric dimer model. Recently, the local influence of surface defects has been identified by the scanning tunneling microscope (STM). The arrangement of images of dimers near the defect is well reproduced both at low and at high temperature in the calculated STM image. We also find that, in a particular configuration of a few defects, the influence of the defects is much wider than the simple sum of isolated defects at low temperatures. This gives a reason why a wide region of symmetric-appearing images was observed in the area with rather low defect density in a low-temperature STM image. |
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