Carrier scattering and excitonic effects on electron-hole-pair diffusion in nondoped and p-type-modulation-doped GaAs/AlxGa1-x As quantum-well structures
We have performed lateral-diffusion measurements of photoexcited electron-hole pairs at various excitation densities for nondoped and p-type-modulation-doped GaAs/Al0.3Ga0.7As multiple-quantum-well structures at 77 K, using an all-optical time-of-flight technique with a single-mode optical-fiber pro...
Ausführliche Beschreibung
Gespeichert in:
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| Format: |
E-Artikel |
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| Erschienen: |
1994 |
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| Umfang: |
Online-Ressource 8 |
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| Reproduktion: |
APS Digital Backfile Archive 1893-2003 |
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| Übergeordnetes Werk: |
Enthalten in: Physical review / B - College Park, Md. : APS, 1970, 49(1994), 20, Seite 14523-14530 |
| Übergeordnetes Werk: |
volume:49 ; year:1994 ; number:20 ; pages:14523-14530 ; extent:8 |
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| 520 | |a We have performed lateral-diffusion measurements of photoexcited electron-hole pairs at various excitation densities for nondoped and p-type-modulation-doped GaAs/Al0.3Ga0.7As multiple-quantum-well structures at 77 K, using an all-optical time-of-flight technique with a single-mode optical-fiber probe. Systematic measurements at various electron and hole densities revealed remarkable deviation from the conventional ambipolar diffusion, indicating the important contribution of carrier-carrier scattering and excitonic effects to the diffusion. | ||
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(DE-627)NLEJ249139545 (DE-601)aps:43e2042bee2829ec8ed48ce495530cffcbe583c9 DE-627 ger DE-627 rakwb Carrier scattering and excitonic effects on electron-hole-pair diffusion in nondoped and p-type-modulation-doped GaAs/AlxGa1-x As quantum-well structures 1994 Online-Ressource 8 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We have performed lateral-diffusion measurements of photoexcited electron-hole pairs at various excitation densities for nondoped and p-type-modulation-doped GaAs/Al0.3Ga0.7As multiple-quantum-well structures at 77 K, using an all-optical time-of-flight technique with a single-mode optical-fiber probe. Systematic measurements at various electron and hole densities revealed remarkable deviation from the conventional ambipolar diffusion, indicating the important contribution of carrier-carrier scattering and excitonic effects to the diffusion. APS Digital Backfile Archive 1893-2003 Akiyama, Hidefumi oth Enthalten in Physical review / B College Park, Md. : APS, 1970 49(1994), 20, Seite 14523-14530 Online-Ressource (DE-627)NLEJ248237845 (DE-600)1473011-X 1550-235X nnns volume:49 year:1994 number:20 pages:14523-14530 extent:8 https://www.tib.eu/de/suchen/id/aps%3A43e2042bee2829ec8ed48ce495530cffcbe583c9 Verlag Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-APS GBV_NL_ARTICLE AR 49 1994 20 14523-14530 8 |
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(DE-627)NLEJ249139545 (DE-601)aps:43e2042bee2829ec8ed48ce495530cffcbe583c9 DE-627 ger DE-627 rakwb Carrier scattering and excitonic effects on electron-hole-pair diffusion in nondoped and p-type-modulation-doped GaAs/AlxGa1-x As quantum-well structures 1994 Online-Ressource 8 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We have performed lateral-diffusion measurements of photoexcited electron-hole pairs at various excitation densities for nondoped and p-type-modulation-doped GaAs/Al0.3Ga0.7As multiple-quantum-well structures at 77 K, using an all-optical time-of-flight technique with a single-mode optical-fiber probe. Systematic measurements at various electron and hole densities revealed remarkable deviation from the conventional ambipolar diffusion, indicating the important contribution of carrier-carrier scattering and excitonic effects to the diffusion. APS Digital Backfile Archive 1893-2003 Akiyama, Hidefumi oth Enthalten in Physical review / B College Park, Md. : APS, 1970 49(1994), 20, Seite 14523-14530 Online-Ressource (DE-627)NLEJ248237845 (DE-600)1473011-X 1550-235X nnns volume:49 year:1994 number:20 pages:14523-14530 extent:8 https://www.tib.eu/de/suchen/id/aps%3A43e2042bee2829ec8ed48ce495530cffcbe583c9 Verlag Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-APS GBV_NL_ARTICLE AR 49 1994 20 14523-14530 8 |
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(DE-627)NLEJ249139545 (DE-601)aps:43e2042bee2829ec8ed48ce495530cffcbe583c9 DE-627 ger DE-627 rakwb Carrier scattering and excitonic effects on electron-hole-pair diffusion in nondoped and p-type-modulation-doped GaAs/AlxGa1-x As quantum-well structures 1994 Online-Ressource 8 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We have performed lateral-diffusion measurements of photoexcited electron-hole pairs at various excitation densities for nondoped and p-type-modulation-doped GaAs/Al0.3Ga0.7As multiple-quantum-well structures at 77 K, using an all-optical time-of-flight technique with a single-mode optical-fiber probe. Systematic measurements at various electron and hole densities revealed remarkable deviation from the conventional ambipolar diffusion, indicating the important contribution of carrier-carrier scattering and excitonic effects to the diffusion. APS Digital Backfile Archive 1893-2003 Akiyama, Hidefumi oth Enthalten in Physical review / B College Park, Md. : APS, 1970 49(1994), 20, Seite 14523-14530 Online-Ressource (DE-627)NLEJ248237845 (DE-600)1473011-X 1550-235X nnns volume:49 year:1994 number:20 pages:14523-14530 extent:8 https://www.tib.eu/de/suchen/id/aps%3A43e2042bee2829ec8ed48ce495530cffcbe583c9 Verlag Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-APS GBV_NL_ARTICLE AR 49 1994 20 14523-14530 8 |
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(DE-627)NLEJ249139545 (DE-601)aps:43e2042bee2829ec8ed48ce495530cffcbe583c9 DE-627 ger DE-627 rakwb Carrier scattering and excitonic effects on electron-hole-pair diffusion in nondoped and p-type-modulation-doped GaAs/AlxGa1-x As quantum-well structures 1994 Online-Ressource 8 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We have performed lateral-diffusion measurements of photoexcited electron-hole pairs at various excitation densities for nondoped and p-type-modulation-doped GaAs/Al0.3Ga0.7As multiple-quantum-well structures at 77 K, using an all-optical time-of-flight technique with a single-mode optical-fiber probe. Systematic measurements at various electron and hole densities revealed remarkable deviation from the conventional ambipolar diffusion, indicating the important contribution of carrier-carrier scattering and excitonic effects to the diffusion. APS Digital Backfile Archive 1893-2003 Akiyama, Hidefumi oth Enthalten in Physical review / B College Park, Md. : APS, 1970 49(1994), 20, Seite 14523-14530 Online-Ressource (DE-627)NLEJ248237845 (DE-600)1473011-X 1550-235X nnns volume:49 year:1994 number:20 pages:14523-14530 extent:8 https://www.tib.eu/de/suchen/id/aps%3A43e2042bee2829ec8ed48ce495530cffcbe583c9 Verlag Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-APS GBV_NL_ARTICLE AR 49 1994 20 14523-14530 8 |
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(DE-627)NLEJ249139545 (DE-601)aps:43e2042bee2829ec8ed48ce495530cffcbe583c9 DE-627 ger DE-627 rakwb Carrier scattering and excitonic effects on electron-hole-pair diffusion in nondoped and p-type-modulation-doped GaAs/AlxGa1-x As quantum-well structures 1994 Online-Ressource 8 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We have performed lateral-diffusion measurements of photoexcited electron-hole pairs at various excitation densities for nondoped and p-type-modulation-doped GaAs/Al0.3Ga0.7As multiple-quantum-well structures at 77 K, using an all-optical time-of-flight technique with a single-mode optical-fiber probe. Systematic measurements at various electron and hole densities revealed remarkable deviation from the conventional ambipolar diffusion, indicating the important contribution of carrier-carrier scattering and excitonic effects to the diffusion. APS Digital Backfile Archive 1893-2003 Akiyama, Hidefumi oth Enthalten in Physical review / B College Park, Md. : APS, 1970 49(1994), 20, Seite 14523-14530 Online-Ressource (DE-627)NLEJ248237845 (DE-600)1473011-X 1550-235X nnns volume:49 year:1994 number:20 pages:14523-14530 extent:8 https://www.tib.eu/de/suchen/id/aps%3A43e2042bee2829ec8ed48ce495530cffcbe583c9 Verlag Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-APS GBV_NL_ARTICLE AR 49 1994 20 14523-14530 8 |
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carrier scattering and excitonic effects on electron-hole-pair diffusion in nondoped and p-type-modulation-doped gaas/alxga1-x as quantum-well structures |
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Carrier scattering and excitonic effects on electron-hole-pair diffusion in nondoped and p-type-modulation-doped GaAs/AlxGa1-x As quantum-well structures |
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We have performed lateral-diffusion measurements of photoexcited electron-hole pairs at various excitation densities for nondoped and p-type-modulation-doped GaAs/Al0.3Ga0.7As multiple-quantum-well structures at 77 K, using an all-optical time-of-flight technique with a single-mode optical-fiber probe. Systematic measurements at various electron and hole densities revealed remarkable deviation from the conventional ambipolar diffusion, indicating the important contribution of carrier-carrier scattering and excitonic effects to the diffusion. |
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We have performed lateral-diffusion measurements of photoexcited electron-hole pairs at various excitation densities for nondoped and p-type-modulation-doped GaAs/Al0.3Ga0.7As multiple-quantum-well structures at 77 K, using an all-optical time-of-flight technique with a single-mode optical-fiber probe. Systematic measurements at various electron and hole densities revealed remarkable deviation from the conventional ambipolar diffusion, indicating the important contribution of carrier-carrier scattering and excitonic effects to the diffusion. |
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We have performed lateral-diffusion measurements of photoexcited electron-hole pairs at various excitation densities for nondoped and p-type-modulation-doped GaAs/Al0.3Ga0.7As multiple-quantum-well structures at 77 K, using an all-optical time-of-flight technique with a single-mode optical-fiber probe. Systematic measurements at various electron and hole densities revealed remarkable deviation from the conventional ambipolar diffusion, indicating the important contribution of carrier-carrier scattering and excitonic effects to the diffusion. |
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