Dangling bonds on silicon
The electron-paramagnetic-resonance signal that appears when Si is crushed, cleaved, or abraded is shown to be proportional to the areas of microcracks induced in the specimen. These are shown to be more prevalent than previously realized. Detailed consideration shows that a wide variety of previous...
Ausführliche Beschreibung
Gespeichert in:
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| Format: |
E-Artikel |
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| Erschienen: |
1978 |
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| Umfang: |
Online-Ressource 15 |
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| Reproduktion: |
APS Digital Backfile Archive 1893-2003 |
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| Übergeordnetes Werk: |
Enthalten in: Physical review / B - College Park, Md. : APS, 1970, 17(1978), 4, Seite 1893-1907 |
| Übergeordnetes Werk: |
volume:17 ; year:1978 ; number:4 ; pages:1893-1907 ; extent:15 |
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| 520 | |a The electron-paramagnetic-resonance signal that appears when Si is crushed, cleaved, or abraded is shown to be proportional to the areas of microcracks induced in the specimen. These are shown to be more prevalent than previously realized. Detailed consideration shows that a wide variety of previously inexplicable data can now be understood. These include some effects of oxygen and hydrogen, variability of signal width, effects of abrasive particle size, and kind of cleavage. The origin of the unpaired electrons is considered and it is concluded that they may be in localized states on the surfaces of the microcracks, such states being apparently a case of Anderson localization. The atoms on the crack surfaces are subject to spatially varying overlap forces and stress fields whose energy range exceeds the normal bandwidth, thus inducing localization. The temperature dependence of the paramagnetism of such states is discussed, including correlation corrections, and shown to yield approximately T-1 as observed experimentally. A similar explanation applies to Ge. Cleancleaved Si surfaces display negligible surface paramagnetism due to pairing of surface electrons on alternate atom sites. The results suggest that for amorphous Si and Ge, localized states on the surfaces of small atom aggregates should be considered as a possible source of the observed paramagnetism. | ||
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(DE-627)NLEJ249609886 (DE-601)aps:b8ba0bff3439638e6e6ba8d8294dc0e927bf4541 DE-627 ger DE-627 rakwb Dangling bonds on silicon 1978 Online-Ressource 15 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The electron-paramagnetic-resonance signal that appears when Si is crushed, cleaved, or abraded is shown to be proportional to the areas of microcracks induced in the specimen. These are shown to be more prevalent than previously realized. Detailed consideration shows that a wide variety of previously inexplicable data can now be understood. These include some effects of oxygen and hydrogen, variability of signal width, effects of abrasive particle size, and kind of cleavage. The origin of the unpaired electrons is considered and it is concluded that they may be in localized states on the surfaces of the microcracks, such states being apparently a case of Anderson localization. The atoms on the crack surfaces are subject to spatially varying overlap forces and stress fields whose energy range exceeds the normal bandwidth, thus inducing localization. The temperature dependence of the paramagnetism of such states is discussed, including correlation corrections, and shown to yield approximately T-1 as observed experimentally. A similar explanation applies to Ge. Cleancleaved Si surfaces display negligible surface paramagnetism due to pairing of surface electrons on alternate atom sites. The results suggest that for amorphous Si and Ge, localized states on the surfaces of small atom aggregates should be considered as a possible source of the observed paramagnetism. APS Digital Backfile Archive 1893-2003 Lemke, B. P. oth Haneman, D. oth Enthalten in Physical review / B College Park, Md. : APS, 1970 17(1978), 4, Seite 1893-1907 Online-Ressource (DE-627)NLEJ248237845 (DE-600)1473011-X 1550-235X nnns volume:17 year:1978 number:4 pages:1893-1907 extent:15 https://www.tib.eu/de/suchen/id/aps%3Ab8ba0bff3439638e6e6ba8d8294dc0e927bf4541 Verlag Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-APS GBV_NL_ARTICLE AR 17 1978 4 1893-1907 15 |
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(DE-627)NLEJ249609886 (DE-601)aps:b8ba0bff3439638e6e6ba8d8294dc0e927bf4541 DE-627 ger DE-627 rakwb Dangling bonds on silicon 1978 Online-Ressource 15 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The electron-paramagnetic-resonance signal that appears when Si is crushed, cleaved, or abraded is shown to be proportional to the areas of microcracks induced in the specimen. These are shown to be more prevalent than previously realized. Detailed consideration shows that a wide variety of previously inexplicable data can now be understood. These include some effects of oxygen and hydrogen, variability of signal width, effects of abrasive particle size, and kind of cleavage. The origin of the unpaired electrons is considered and it is concluded that they may be in localized states on the surfaces of the microcracks, such states being apparently a case of Anderson localization. The atoms on the crack surfaces are subject to spatially varying overlap forces and stress fields whose energy range exceeds the normal bandwidth, thus inducing localization. The temperature dependence of the paramagnetism of such states is discussed, including correlation corrections, and shown to yield approximately T-1 as observed experimentally. A similar explanation applies to Ge. Cleancleaved Si surfaces display negligible surface paramagnetism due to pairing of surface electrons on alternate atom sites. The results suggest that for amorphous Si and Ge, localized states on the surfaces of small atom aggregates should be considered as a possible source of the observed paramagnetism. APS Digital Backfile Archive 1893-2003 Lemke, B. P. oth Haneman, D. oth Enthalten in Physical review / B College Park, Md. : APS, 1970 17(1978), 4, Seite 1893-1907 Online-Ressource (DE-627)NLEJ248237845 (DE-600)1473011-X 1550-235X nnns volume:17 year:1978 number:4 pages:1893-1907 extent:15 https://www.tib.eu/de/suchen/id/aps%3Ab8ba0bff3439638e6e6ba8d8294dc0e927bf4541 Verlag Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-APS GBV_NL_ARTICLE AR 17 1978 4 1893-1907 15 |
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(DE-627)NLEJ249609886 (DE-601)aps:b8ba0bff3439638e6e6ba8d8294dc0e927bf4541 DE-627 ger DE-627 rakwb Dangling bonds on silicon 1978 Online-Ressource 15 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The electron-paramagnetic-resonance signal that appears when Si is crushed, cleaved, or abraded is shown to be proportional to the areas of microcracks induced in the specimen. These are shown to be more prevalent than previously realized. Detailed consideration shows that a wide variety of previously inexplicable data can now be understood. These include some effects of oxygen and hydrogen, variability of signal width, effects of abrasive particle size, and kind of cleavage. The origin of the unpaired electrons is considered and it is concluded that they may be in localized states on the surfaces of the microcracks, such states being apparently a case of Anderson localization. The atoms on the crack surfaces are subject to spatially varying overlap forces and stress fields whose energy range exceeds the normal bandwidth, thus inducing localization. The temperature dependence of the paramagnetism of such states is discussed, including correlation corrections, and shown to yield approximately T-1 as observed experimentally. A similar explanation applies to Ge. Cleancleaved Si surfaces display negligible surface paramagnetism due to pairing of surface electrons on alternate atom sites. The results suggest that for amorphous Si and Ge, localized states on the surfaces of small atom aggregates should be considered as a possible source of the observed paramagnetism. APS Digital Backfile Archive 1893-2003 Lemke, B. P. oth Haneman, D. oth Enthalten in Physical review / B College Park, Md. : APS, 1970 17(1978), 4, Seite 1893-1907 Online-Ressource (DE-627)NLEJ248237845 (DE-600)1473011-X 1550-235X nnns volume:17 year:1978 number:4 pages:1893-1907 extent:15 https://www.tib.eu/de/suchen/id/aps%3Ab8ba0bff3439638e6e6ba8d8294dc0e927bf4541 Verlag Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-APS GBV_NL_ARTICLE AR 17 1978 4 1893-1907 15 |
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(DE-627)NLEJ249609886 (DE-601)aps:b8ba0bff3439638e6e6ba8d8294dc0e927bf4541 DE-627 ger DE-627 rakwb Dangling bonds on silicon 1978 Online-Ressource 15 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The electron-paramagnetic-resonance signal that appears when Si is crushed, cleaved, or abraded is shown to be proportional to the areas of microcracks induced in the specimen. These are shown to be more prevalent than previously realized. Detailed consideration shows that a wide variety of previously inexplicable data can now be understood. These include some effects of oxygen and hydrogen, variability of signal width, effects of abrasive particle size, and kind of cleavage. The origin of the unpaired electrons is considered and it is concluded that they may be in localized states on the surfaces of the microcracks, such states being apparently a case of Anderson localization. The atoms on the crack surfaces are subject to spatially varying overlap forces and stress fields whose energy range exceeds the normal bandwidth, thus inducing localization. The temperature dependence of the paramagnetism of such states is discussed, including correlation corrections, and shown to yield approximately T-1 as observed experimentally. A similar explanation applies to Ge. Cleancleaved Si surfaces display negligible surface paramagnetism due to pairing of surface electrons on alternate atom sites. The results suggest that for amorphous Si and Ge, localized states on the surfaces of small atom aggregates should be considered as a possible source of the observed paramagnetism. APS Digital Backfile Archive 1893-2003 Lemke, B. P. oth Haneman, D. oth Enthalten in Physical review / B College Park, Md. : APS, 1970 17(1978), 4, Seite 1893-1907 Online-Ressource (DE-627)NLEJ248237845 (DE-600)1473011-X 1550-235X nnns volume:17 year:1978 number:4 pages:1893-1907 extent:15 https://www.tib.eu/de/suchen/id/aps%3Ab8ba0bff3439638e6e6ba8d8294dc0e927bf4541 Verlag Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-APS GBV_NL_ARTICLE AR 17 1978 4 1893-1907 15 |
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(DE-627)NLEJ249609886 (DE-601)aps:b8ba0bff3439638e6e6ba8d8294dc0e927bf4541 DE-627 ger DE-627 rakwb Dangling bonds on silicon 1978 Online-Ressource 15 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The electron-paramagnetic-resonance signal that appears when Si is crushed, cleaved, or abraded is shown to be proportional to the areas of microcracks induced in the specimen. These are shown to be more prevalent than previously realized. Detailed consideration shows that a wide variety of previously inexplicable data can now be understood. These include some effects of oxygen and hydrogen, variability of signal width, effects of abrasive particle size, and kind of cleavage. The origin of the unpaired electrons is considered and it is concluded that they may be in localized states on the surfaces of the microcracks, such states being apparently a case of Anderson localization. The atoms on the crack surfaces are subject to spatially varying overlap forces and stress fields whose energy range exceeds the normal bandwidth, thus inducing localization. The temperature dependence of the paramagnetism of such states is discussed, including correlation corrections, and shown to yield approximately T-1 as observed experimentally. A similar explanation applies to Ge. Cleancleaved Si surfaces display negligible surface paramagnetism due to pairing of surface electrons on alternate atom sites. The results suggest that for amorphous Si and Ge, localized states on the surfaces of small atom aggregates should be considered as a possible source of the observed paramagnetism. APS Digital Backfile Archive 1893-2003 Lemke, B. P. oth Haneman, D. oth Enthalten in Physical review / B College Park, Md. : APS, 1970 17(1978), 4, Seite 1893-1907 Online-Ressource (DE-627)NLEJ248237845 (DE-600)1473011-X 1550-235X nnns volume:17 year:1978 number:4 pages:1893-1907 extent:15 https://www.tib.eu/de/suchen/id/aps%3Ab8ba0bff3439638e6e6ba8d8294dc0e927bf4541 Verlag Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-APS GBV_NL_ARTICLE AR 17 1978 4 1893-1907 15 |
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The electron-paramagnetic-resonance signal that appears when Si is crushed, cleaved, or abraded is shown to be proportional to the areas of microcracks induced in the specimen. These are shown to be more prevalent than previously realized. Detailed consideration shows that a wide variety of previously inexplicable data can now be understood. These include some effects of oxygen and hydrogen, variability of signal width, effects of abrasive particle size, and kind of cleavage. The origin of the unpaired electrons is considered and it is concluded that they may be in localized states on the surfaces of the microcracks, such states being apparently a case of Anderson localization. The atoms on the crack surfaces are subject to spatially varying overlap forces and stress fields whose energy range exceeds the normal bandwidth, thus inducing localization. The temperature dependence of the paramagnetism of such states is discussed, including correlation corrections, and shown to yield approximately T-1 as observed experimentally. A similar explanation applies to Ge. Cleancleaved Si surfaces display negligible surface paramagnetism due to pairing of surface electrons on alternate atom sites. The results suggest that for amorphous Si and Ge, localized states on the surfaces of small atom aggregates should be considered as a possible source of the observed paramagnetism. |
| abstractGer |
The electron-paramagnetic-resonance signal that appears when Si is crushed, cleaved, or abraded is shown to be proportional to the areas of microcracks induced in the specimen. These are shown to be more prevalent than previously realized. Detailed consideration shows that a wide variety of previously inexplicable data can now be understood. These include some effects of oxygen and hydrogen, variability of signal width, effects of abrasive particle size, and kind of cleavage. The origin of the unpaired electrons is considered and it is concluded that they may be in localized states on the surfaces of the microcracks, such states being apparently a case of Anderson localization. The atoms on the crack surfaces are subject to spatially varying overlap forces and stress fields whose energy range exceeds the normal bandwidth, thus inducing localization. The temperature dependence of the paramagnetism of such states is discussed, including correlation corrections, and shown to yield approximately T-1 as observed experimentally. A similar explanation applies to Ge. Cleancleaved Si surfaces display negligible surface paramagnetism due to pairing of surface electrons on alternate atom sites. The results suggest that for amorphous Si and Ge, localized states on the surfaces of small atom aggregates should be considered as a possible source of the observed paramagnetism. |
| abstract_unstemmed |
The electron-paramagnetic-resonance signal that appears when Si is crushed, cleaved, or abraded is shown to be proportional to the areas of microcracks induced in the specimen. These are shown to be more prevalent than previously realized. Detailed consideration shows that a wide variety of previously inexplicable data can now be understood. These include some effects of oxygen and hydrogen, variability of signal width, effects of abrasive particle size, and kind of cleavage. The origin of the unpaired electrons is considered and it is concluded that they may be in localized states on the surfaces of the microcracks, such states being apparently a case of Anderson localization. The atoms on the crack surfaces are subject to spatially varying overlap forces and stress fields whose energy range exceeds the normal bandwidth, thus inducing localization. The temperature dependence of the paramagnetism of such states is discussed, including correlation corrections, and shown to yield approximately T-1 as observed experimentally. A similar explanation applies to Ge. Cleancleaved Si surfaces display negligible surface paramagnetism due to pairing of surface electrons on alternate atom sites. The results suggest that for amorphous Si and Ge, localized states on the surfaces of small atom aggregates should be considered as a possible source of the observed paramagnetism. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000naa a22002652 4500</leader><controlfield tag="001">NLEJ249609886</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20231114102319.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">231114s1978 xx |||||o 00| ||und c</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)NLEJ249609886</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-601)aps:b8ba0bff3439638e6e6ba8d8294dc0e927bf4541</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Dangling bonds on silicon</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1978</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">15</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">The electron-paramagnetic-resonance signal that appears when Si is crushed, cleaved, or abraded is shown to be proportional to the areas of microcracks induced in the specimen. These are shown to be more prevalent than previously realized. Detailed consideration shows that a wide variety of previously inexplicable data can now be understood. These include some effects of oxygen and hydrogen, variability of signal width, effects of abrasive particle size, and kind of cleavage. The origin of the unpaired electrons is considered and it is concluded that they may be in localized states on the surfaces of the microcracks, such states being apparently a case of Anderson localization. The atoms on the crack surfaces are subject to spatially varying overlap forces and stress fields whose energy range exceeds the normal bandwidth, thus inducing localization. The temperature dependence of the paramagnetism of such states is discussed, including correlation corrections, and shown to yield approximately T-1 as observed experimentally. A similar explanation applies to Ge. Cleancleaved Si surfaces display negligible surface paramagnetism due to pairing of surface electrons on alternate atom sites. The results suggest that for amorphous Si and Ge, localized states on the surfaces of small atom aggregates should be considered as a possible source of the observed paramagnetism.</subfield></datafield><datafield tag="533" ind1=" " ind2=" "><subfield code="f">APS Digital Backfile Archive 1893-2003</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Lemke, B. P.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Haneman, D.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Physical review / B</subfield><subfield code="d">College Park, Md. : APS, 1970</subfield><subfield code="g">17(1978), 4, Seite 1893-1907</subfield><subfield code="h">Online-Ressource</subfield><subfield code="w">(DE-627)NLEJ248237845</subfield><subfield code="w">(DE-600)1473011-X</subfield><subfield code="x">1550-235X</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:17</subfield><subfield code="g">year:1978</subfield><subfield code="g">number:4</subfield><subfield code="g">pages:1893-1907</subfield><subfield code="g">extent:15</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://www.tib.eu/de/suchen/id/aps%3Ab8ba0bff3439638e6e6ba8d8294dc0e927bf4541</subfield><subfield code="x">Verlag</subfield><subfield code="z">Deutschlandweit zugänglich</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-1-APS</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_NL_ARTICLE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">17</subfield><subfield code="j">1978</subfield><subfield code="e">4</subfield><subfield code="h">1893-1907</subfield><subfield code="g">15</subfield></datafield></record></collection>
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