Multijump Magnetic Switching in In-Plane Magnetized Ultrathin Epitaxial Ag/Fe/Ag(001) Films
We predict and verify experimentally using magneto-optics a new magnetic switching mechanism involving three irreversible transitions in in-plane magnetized ultrathin epitaxial films. These transitions are mediated by the sweeping of 90° and 180° domain walls at three distinct applied field strength...
Ausführliche Beschreibung
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| Autor*in: |
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| Format: |
E-Artikel |
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| Erschienen: |
1997 |
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| Umfang: |
Online-Ressource 4 |
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| Reproduktion: |
APS Digital Backfile Archive 1893-2003 |
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| Übergeordnetes Werk: |
Enthalten in: Physical review letters - College Park, Md. : APS, 1958, 79(1997), 20, Seite 4018-4021 |
| Übergeordnetes Werk: |
volume:79 ; year:1997 ; number:20 ; pages:4018-4021 ; extent:4 |
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| 520 | |a We predict and verify experimentally using magneto-optics a new magnetic switching mechanism involving three irreversible transitions in in-plane magnetized ultrathin epitaxial films. These transitions are mediated by the sweeping of 90° and 180° domain walls at three distinct applied field strengths. The prediction and observation of this new phenomenon shows that the complex domain processes which determine magnetic switching in such films can be accurately modeled by a single parameter which corresponds physically to the maximum pinning pressure that defects can exert on a domain wall. | ||
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(DE-627)NLEJ250750422 (DE-601)aps:aacf08b2a6e568c4de144d0626e553f0d4870db0 DE-627 ger DE-627 rakwb Multijump Magnetic Switching in In-Plane Magnetized Ultrathin Epitaxial Ag/Fe/Ag(001) Films 1997 Online-Ressource 4 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We predict and verify experimentally using magneto-optics a new magnetic switching mechanism involving three irreversible transitions in in-plane magnetized ultrathin epitaxial films. These transitions are mediated by the sweeping of 90° and 180° domain walls at three distinct applied field strengths. The prediction and observation of this new phenomenon shows that the complex domain processes which determine magnetic switching in such films can be accurately modeled by a single parameter which corresponds physically to the maximum pinning pressure that defects can exert on a domain wall. APS Digital Backfile Archive 1893-2003 Cowburn, R. P. oth Gray, S. J. oth Bland, J. A. oth Enthalten in Physical review letters College Park, Md. : APS, 1958 79(1997), 20, Seite 4018-4021 Online-Ressource (DE-627)NLEJ248237888 (DE-600)1472655-5 1079-7114 nnns volume:79 year:1997 number:20 pages:4018-4021 extent:4 https://www.tib.eu/de/suchen/id/aps%3Aaacf08b2a6e568c4de144d0626e553f0d4870db0 Verlag Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-APS GBV_NL_ARTICLE AR 79 1997 20 4018-4021 4 |
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(DE-627)NLEJ250750422 (DE-601)aps:aacf08b2a6e568c4de144d0626e553f0d4870db0 DE-627 ger DE-627 rakwb Multijump Magnetic Switching in In-Plane Magnetized Ultrathin Epitaxial Ag/Fe/Ag(001) Films 1997 Online-Ressource 4 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We predict and verify experimentally using magneto-optics a new magnetic switching mechanism involving three irreversible transitions in in-plane magnetized ultrathin epitaxial films. These transitions are mediated by the sweeping of 90° and 180° domain walls at three distinct applied field strengths. The prediction and observation of this new phenomenon shows that the complex domain processes which determine magnetic switching in such films can be accurately modeled by a single parameter which corresponds physically to the maximum pinning pressure that defects can exert on a domain wall. APS Digital Backfile Archive 1893-2003 Cowburn, R. P. oth Gray, S. J. oth Bland, J. A. oth Enthalten in Physical review letters College Park, Md. : APS, 1958 79(1997), 20, Seite 4018-4021 Online-Ressource (DE-627)NLEJ248237888 (DE-600)1472655-5 1079-7114 nnns volume:79 year:1997 number:20 pages:4018-4021 extent:4 https://www.tib.eu/de/suchen/id/aps%3Aaacf08b2a6e568c4de144d0626e553f0d4870db0 Verlag Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-APS GBV_NL_ARTICLE AR 79 1997 20 4018-4021 4 |
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(DE-627)NLEJ250750422 (DE-601)aps:aacf08b2a6e568c4de144d0626e553f0d4870db0 DE-627 ger DE-627 rakwb Multijump Magnetic Switching in In-Plane Magnetized Ultrathin Epitaxial Ag/Fe/Ag(001) Films 1997 Online-Ressource 4 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We predict and verify experimentally using magneto-optics a new magnetic switching mechanism involving three irreversible transitions in in-plane magnetized ultrathin epitaxial films. These transitions are mediated by the sweeping of 90° and 180° domain walls at three distinct applied field strengths. The prediction and observation of this new phenomenon shows that the complex domain processes which determine magnetic switching in such films can be accurately modeled by a single parameter which corresponds physically to the maximum pinning pressure that defects can exert on a domain wall. APS Digital Backfile Archive 1893-2003 Cowburn, R. P. oth Gray, S. J. oth Bland, J. A. oth Enthalten in Physical review letters College Park, Md. : APS, 1958 79(1997), 20, Seite 4018-4021 Online-Ressource (DE-627)NLEJ248237888 (DE-600)1472655-5 1079-7114 nnns volume:79 year:1997 number:20 pages:4018-4021 extent:4 https://www.tib.eu/de/suchen/id/aps%3Aaacf08b2a6e568c4de144d0626e553f0d4870db0 Verlag Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-APS GBV_NL_ARTICLE AR 79 1997 20 4018-4021 4 |
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Multijump Magnetic Switching in In-Plane Magnetized Ultrathin Epitaxial Ag/Fe/Ag(001) Films |
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We predict and verify experimentally using magneto-optics a new magnetic switching mechanism involving three irreversible transitions in in-plane magnetized ultrathin epitaxial films. These transitions are mediated by the sweeping of 90° and 180° domain walls at three distinct applied field strengths. The prediction and observation of this new phenomenon shows that the complex domain processes which determine magnetic switching in such films can be accurately modeled by a single parameter which corresponds physically to the maximum pinning pressure that defects can exert on a domain wall. |
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We predict and verify experimentally using magneto-optics a new magnetic switching mechanism involving three irreversible transitions in in-plane magnetized ultrathin epitaxial films. These transitions are mediated by the sweeping of 90° and 180° domain walls at three distinct applied field strengths. The prediction and observation of this new phenomenon shows that the complex domain processes which determine magnetic switching in such films can be accurately modeled by a single parameter which corresponds physically to the maximum pinning pressure that defects can exert on a domain wall. |
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We predict and verify experimentally using magneto-optics a new magnetic switching mechanism involving three irreversible transitions in in-plane magnetized ultrathin epitaxial films. These transitions are mediated by the sweeping of 90° and 180° domain walls at three distinct applied field strengths. The prediction and observation of this new phenomenon shows that the complex domain processes which determine magnetic switching in such films can be accurately modeled by a single parameter which corresponds physically to the maximum pinning pressure that defects can exert on a domain wall. |
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