Depolarization of Positive Muons in Solids
When polarized positive muons stop in a solid, they may be depolarized prior to their decay. The presence of a magnetic field along the direction of initial polarization will inhibit, or quench, some of this depolarization. We have studied depolarization and quenching in a variety of solids, includi...
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E-Artikel |
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| Erschienen: |
1966 |
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Online-Ressource 11 |
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APS Digital Backfile Archive 1893-2003 |
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Enthalten in: The physical review - Lancaster, Pa. [u.a.], 1893, 142(1966), 1, Seite 217-227 |
| Übergeordnetes Werk: |
volume:142 ; year:1966 ; number:1 ; pages:217-227 ; extent:11 |
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| 520 | |a When polarized positive muons stop in a solid, they may be depolarized prior to their decay. The presence of a magnetic field along the direction of initial polarization will inhibit, or quench, some of this depolarization. We have studied depolarization and quenching in a variety of solids, including semiconductors, at temperatures as low as 4.2°K. No evidence has been found that any muon depolarization is associated with the formation of a muonium atom which is bound for >10-10 sec, even in samples at 4.2°K. For many samples and temperatures, the quenching of the observed depolarization is consistent with a model in which the muon captures and loses electrons repeatedly, forming a succession of briefly bound muonium atoms. In some of the semiconductors at low temperatures, as well as in other samples, a large fraction of the depolarization is quenched by a field of 100 G. This is seen as evidence for another depolarization mechanism. We also find that the time during which depolarization occurs in boron carbide decreases with decreasing temperature. | ||
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(DE-627)NLEJ251593185 (DE-601)aps:767416dc290c5c54fce039a7cf9a3362f2f91406 DE-627 ger DE-627 rakwb Depolarization of Positive Muons in Solids 1966 Online-Ressource 11 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier When polarized positive muons stop in a solid, they may be depolarized prior to their decay. The presence of a magnetic field along the direction of initial polarization will inhibit, or quench, some of this depolarization. We have studied depolarization and quenching in a variety of solids, including semiconductors, at temperatures as low as 4.2°K. No evidence has been found that any muon depolarization is associated with the formation of a muonium atom which is bound for >10-10 sec, even in samples at 4.2°K. For many samples and temperatures, the quenching of the observed depolarization is consistent with a model in which the muon captures and loses electrons repeatedly, forming a succession of briefly bound muonium atoms. In some of the semiconductors at low temperatures, as well as in other samples, a large fraction of the depolarization is quenched by a field of 100 G. This is seen as evidence for another depolarization mechanism. We also find that the time during which depolarization occurs in boron carbide decreases with decreasing temperature. APS Digital Backfile Archive 1893-2003 Eisenstein, B. oth Prepost, R. oth Sachs, A. M. oth Enthalten in The physical review Lancaster, Pa. [u.a.], 1893 142(1966), 1, Seite 217-227 (DE-627)NLEJ24823790X (DE-600)2177092-X 1536-6065 nnns volume:142 year:1966 number:1 pages:217-227 extent:11 https://www.tib.eu/de/suchen/id/aps%3A767416dc290c5c54fce039a7cf9a3362f2f91406 Verlag Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-APS GBV_NL_ARTICLE AR 142 1966 1 217-227 11 |
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(DE-627)NLEJ251593185 (DE-601)aps:767416dc290c5c54fce039a7cf9a3362f2f91406 DE-627 ger DE-627 rakwb Depolarization of Positive Muons in Solids 1966 Online-Ressource 11 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier When polarized positive muons stop in a solid, they may be depolarized prior to their decay. The presence of a magnetic field along the direction of initial polarization will inhibit, or quench, some of this depolarization. We have studied depolarization and quenching in a variety of solids, including semiconductors, at temperatures as low as 4.2°K. No evidence has been found that any muon depolarization is associated with the formation of a muonium atom which is bound for >10-10 sec, even in samples at 4.2°K. For many samples and temperatures, the quenching of the observed depolarization is consistent with a model in which the muon captures and loses electrons repeatedly, forming a succession of briefly bound muonium atoms. In some of the semiconductors at low temperatures, as well as in other samples, a large fraction of the depolarization is quenched by a field of 100 G. This is seen as evidence for another depolarization mechanism. We also find that the time during which depolarization occurs in boron carbide decreases with decreasing temperature. APS Digital Backfile Archive 1893-2003 Eisenstein, B. oth Prepost, R. oth Sachs, A. M. oth Enthalten in The physical review Lancaster, Pa. [u.a.], 1893 142(1966), 1, Seite 217-227 (DE-627)NLEJ24823790X (DE-600)2177092-X 1536-6065 nnns volume:142 year:1966 number:1 pages:217-227 extent:11 https://www.tib.eu/de/suchen/id/aps%3A767416dc290c5c54fce039a7cf9a3362f2f91406 Verlag Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-APS GBV_NL_ARTICLE AR 142 1966 1 217-227 11 |
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(DE-627)NLEJ251593185 (DE-601)aps:767416dc290c5c54fce039a7cf9a3362f2f91406 DE-627 ger DE-627 rakwb Depolarization of Positive Muons in Solids 1966 Online-Ressource 11 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier When polarized positive muons stop in a solid, they may be depolarized prior to their decay. The presence of a magnetic field along the direction of initial polarization will inhibit, or quench, some of this depolarization. We have studied depolarization and quenching in a variety of solids, including semiconductors, at temperatures as low as 4.2°K. No evidence has been found that any muon depolarization is associated with the formation of a muonium atom which is bound for >10-10 sec, even in samples at 4.2°K. For many samples and temperatures, the quenching of the observed depolarization is consistent with a model in which the muon captures and loses electrons repeatedly, forming a succession of briefly bound muonium atoms. In some of the semiconductors at low temperatures, as well as in other samples, a large fraction of the depolarization is quenched by a field of 100 G. This is seen as evidence for another depolarization mechanism. We also find that the time during which depolarization occurs in boron carbide decreases with decreasing temperature. APS Digital Backfile Archive 1893-2003 Eisenstein, B. oth Prepost, R. oth Sachs, A. M. oth Enthalten in The physical review Lancaster, Pa. [u.a.], 1893 142(1966), 1, Seite 217-227 (DE-627)NLEJ24823790X (DE-600)2177092-X 1536-6065 nnns volume:142 year:1966 number:1 pages:217-227 extent:11 https://www.tib.eu/de/suchen/id/aps%3A767416dc290c5c54fce039a7cf9a3362f2f91406 Verlag Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-APS GBV_NL_ARTICLE AR 142 1966 1 217-227 11 |
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(DE-627)NLEJ251593185 (DE-601)aps:767416dc290c5c54fce039a7cf9a3362f2f91406 DE-627 ger DE-627 rakwb Depolarization of Positive Muons in Solids 1966 Online-Ressource 11 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier When polarized positive muons stop in a solid, they may be depolarized prior to their decay. The presence of a magnetic field along the direction of initial polarization will inhibit, or quench, some of this depolarization. We have studied depolarization and quenching in a variety of solids, including semiconductors, at temperatures as low as 4.2°K. No evidence has been found that any muon depolarization is associated with the formation of a muonium atom which is bound for >10-10 sec, even in samples at 4.2°K. For many samples and temperatures, the quenching of the observed depolarization is consistent with a model in which the muon captures and loses electrons repeatedly, forming a succession of briefly bound muonium atoms. In some of the semiconductors at low temperatures, as well as in other samples, a large fraction of the depolarization is quenched by a field of 100 G. This is seen as evidence for another depolarization mechanism. We also find that the time during which depolarization occurs in boron carbide decreases with decreasing temperature. APS Digital Backfile Archive 1893-2003 Eisenstein, B. oth Prepost, R. oth Sachs, A. M. oth Enthalten in The physical review Lancaster, Pa. [u.a.], 1893 142(1966), 1, Seite 217-227 (DE-627)NLEJ24823790X (DE-600)2177092-X 1536-6065 nnns volume:142 year:1966 number:1 pages:217-227 extent:11 https://www.tib.eu/de/suchen/id/aps%3A767416dc290c5c54fce039a7cf9a3362f2f91406 Verlag Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-APS GBV_NL_ARTICLE AR 142 1966 1 217-227 11 |
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(DE-627)NLEJ251593185 (DE-601)aps:767416dc290c5c54fce039a7cf9a3362f2f91406 DE-627 ger DE-627 rakwb Depolarization of Positive Muons in Solids 1966 Online-Ressource 11 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier When polarized positive muons stop in a solid, they may be depolarized prior to their decay. The presence of a magnetic field along the direction of initial polarization will inhibit, or quench, some of this depolarization. We have studied depolarization and quenching in a variety of solids, including semiconductors, at temperatures as low as 4.2°K. No evidence has been found that any muon depolarization is associated with the formation of a muonium atom which is bound for >10-10 sec, even in samples at 4.2°K. For many samples and temperatures, the quenching of the observed depolarization is consistent with a model in which the muon captures and loses electrons repeatedly, forming a succession of briefly bound muonium atoms. In some of the semiconductors at low temperatures, as well as in other samples, a large fraction of the depolarization is quenched by a field of 100 G. This is seen as evidence for another depolarization mechanism. We also find that the time during which depolarization occurs in boron carbide decreases with decreasing temperature. APS Digital Backfile Archive 1893-2003 Eisenstein, B. oth Prepost, R. oth Sachs, A. M. oth Enthalten in The physical review Lancaster, Pa. [u.a.], 1893 142(1966), 1, Seite 217-227 (DE-627)NLEJ24823790X (DE-600)2177092-X 1536-6065 nnns volume:142 year:1966 number:1 pages:217-227 extent:11 https://www.tib.eu/de/suchen/id/aps%3A767416dc290c5c54fce039a7cf9a3362f2f91406 Verlag Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-APS GBV_NL_ARTICLE AR 142 1966 1 217-227 11 |
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Depolarization of Positive Muons in Solids |
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When polarized positive muons stop in a solid, they may be depolarized prior to their decay. The presence of a magnetic field along the direction of initial polarization will inhibit, or quench, some of this depolarization. We have studied depolarization and quenching in a variety of solids, including semiconductors, at temperatures as low as 4.2°K. No evidence has been found that any muon depolarization is associated with the formation of a muonium atom which is bound for >10-10 sec, even in samples at 4.2°K. For many samples and temperatures, the quenching of the observed depolarization is consistent with a model in which the muon captures and loses electrons repeatedly, forming a succession of briefly bound muonium atoms. In some of the semiconductors at low temperatures, as well as in other samples, a large fraction of the depolarization is quenched by a field of 100 G. This is seen as evidence for another depolarization mechanism. We also find that the time during which depolarization occurs in boron carbide decreases with decreasing temperature. |
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When polarized positive muons stop in a solid, they may be depolarized prior to their decay. The presence of a magnetic field along the direction of initial polarization will inhibit, or quench, some of this depolarization. We have studied depolarization and quenching in a variety of solids, including semiconductors, at temperatures as low as 4.2°K. No evidence has been found that any muon depolarization is associated with the formation of a muonium atom which is bound for >10-10 sec, even in samples at 4.2°K. For many samples and temperatures, the quenching of the observed depolarization is consistent with a model in which the muon captures and loses electrons repeatedly, forming a succession of briefly bound muonium atoms. In some of the semiconductors at low temperatures, as well as in other samples, a large fraction of the depolarization is quenched by a field of 100 G. This is seen as evidence for another depolarization mechanism. We also find that the time during which depolarization occurs in boron carbide decreases with decreasing temperature. |
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When polarized positive muons stop in a solid, they may be depolarized prior to their decay. The presence of a magnetic field along the direction of initial polarization will inhibit, or quench, some of this depolarization. We have studied depolarization and quenching in a variety of solids, including semiconductors, at temperatures as low as 4.2°K. No evidence has been found that any muon depolarization is associated with the formation of a muonium atom which is bound for >10-10 sec, even in samples at 4.2°K. For many samples and temperatures, the quenching of the observed depolarization is consistent with a model in which the muon captures and loses electrons repeatedly, forming a succession of briefly bound muonium atoms. In some of the semiconductors at low temperatures, as well as in other samples, a large fraction of the depolarization is quenched by a field of 100 G. This is seen as evidence for another depolarization mechanism. We also find that the time during which depolarization occurs in boron carbide decreases with decreasing temperature. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000naa a22002652 4500</leader><controlfield tag="001">NLEJ251593185</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20231114112113.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">231114s1966 xx |||||o 00| ||und c</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)NLEJ251593185</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-601)aps:767416dc290c5c54fce039a7cf9a3362f2f91406</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Depolarization of Positive Muons in Solids</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1966</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">11</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">When polarized positive muons stop in a solid, they may be depolarized prior to their decay. The presence of a magnetic field along the direction of initial polarization will inhibit, or quench, some of this depolarization. We have studied depolarization and quenching in a variety of solids, including semiconductors, at temperatures as low as 4.2°K. No evidence has been found that any muon depolarization is associated with the formation of a muonium atom which is bound for >10-10 sec, even in samples at 4.2°K. For many samples and temperatures, the quenching of the observed depolarization is consistent with a model in which the muon captures and loses electrons repeatedly, forming a succession of briefly bound muonium atoms. In some of the semiconductors at low temperatures, as well as in other samples, a large fraction of the depolarization is quenched by a field of 100 G. This is seen as evidence for another depolarization mechanism. We also find that the time during which depolarization occurs in boron carbide decreases with decreasing temperature.</subfield></datafield><datafield tag="533" ind1=" " ind2=" "><subfield code="f">APS Digital Backfile Archive 1893-2003</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Eisenstein, B.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Prepost, R.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sachs, A. M.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">The physical review</subfield><subfield code="d">Lancaster, Pa. [u.a.], 1893</subfield><subfield code="g">142(1966), 1, Seite 217-227</subfield><subfield code="w">(DE-627)NLEJ24823790X</subfield><subfield code="w">(DE-600)2177092-X</subfield><subfield code="x">1536-6065</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:142</subfield><subfield code="g">year:1966</subfield><subfield code="g">number:1</subfield><subfield code="g">pages:217-227</subfield><subfield code="g">extent:11</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://www.tib.eu/de/suchen/id/aps%3A767416dc290c5c54fce039a7cf9a3362f2f91406</subfield><subfield code="x">Verlag</subfield><subfield code="z">Deutschlandweit zugänglich</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-1-APS</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_NL_ARTICLE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">142</subfield><subfield code="j">1966</subfield><subfield code="e">1</subfield><subfield code="h">217-227</subfield><subfield code="g">11</subfield></datafield></record></collection>
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7.40102 |