Studies of hydrogen-induced degradation processes in Pb(Zr1-xTix)O3 (PZT) and SrBi2Ta2O9 (SBT) ferroelectric film-based capacitors
The integration of PZT and SBT film-based capacitors with Si integrated circuit technology requires the use of processing steps that may degrade the performance of individual device components. Hydrogen annealing to remove damage in the Si FET adversely affects both PZT and SBT, although the mechani...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Krauss, A. R. [verfasserIn] Dhote, A. [verfasserIn] Auciello, O. [verfasserIn] Im, J. [verfasserIn] Ramesh, R. [verfasserIn] Aggarwal, S. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2011 |
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| Übergeordnetes Werk: |
Enthalten in: Integrated ferroelectrics - London [u.a.] : Taylor & Francis, 1992, 27(1999), 1-4 vom: 01. Nov., Seite 147-157 |
|---|---|
| Übergeordnetes Werk: |
number:1-4 ; volume:27 ; year:1999 ; month:11 ; day:01 ; pages:147-157 |
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10.1080/10584589908228464 |
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| 520 | |a The integration of PZT and SBT film-based capacitors with Si integrated circuit technology requires the use of processing steps that may degrade the performance of individual device components. Hydrogen annealing to remove damage in the Si FET adversely affects both PZT and SBT, although the mechanisms of degradation are different. We have used Mass spectroscopy of recoiled ions (MSRI), X-ray diffraction (XRD), Raman spectroscopy and electrical characterization to study the mechanisms of hydrogen-induced degradation in these two materials. The mechanism responsible for degradation in SBT during hydrogen annealing appears to be hydrogen-induced volatilization of Bi from the near-surface region during film growth. Although there is a similar, but smaller, loss of Pb in PZT, the resulting change in stoichiometry is not responsible for the degradation of the ferroelectric properties. Raman spectroscopy reveals that PZT films exposed to hydrogen exhibit evidence for the formation of polar hydroxyl [OH-] bonds, which can block the movement of ions in the lattice and inhibit polarization. The possible sites for the incorporation of hydrogen are discussed in terms of ionic radii, and crystal structure. | ||
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10.1080/10584589908228464 doi (DE-627)NLEJ253478642 (TFO)752385015 DE-627 ger DE-627 rda eng Krauss, A. R. verfasserin aut Studies of hydrogen-induced degradation processes in Pb(Zr1-xTix)O3 (PZT) and SrBi2Ta2O9 (SBT) ferroelectric film-based capacitors 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The integration of PZT and SBT film-based capacitors with Si integrated circuit technology requires the use of processing steps that may degrade the performance of individual device components. Hydrogen annealing to remove damage in the Si FET adversely affects both PZT and SBT, although the mechanisms of degradation are different. We have used Mass spectroscopy of recoiled ions (MSRI), X-ray diffraction (XRD), Raman spectroscopy and electrical characterization to study the mechanisms of hydrogen-induced degradation in these two materials. The mechanism responsible for degradation in SBT during hydrogen annealing appears to be hydrogen-induced volatilization of Bi from the near-surface region during film growth. Although there is a similar, but smaller, loss of Pb in PZT, the resulting change in stoichiometry is not responsible for the degradation of the ferroelectric properties. Raman spectroscopy reveals that PZT films exposed to hydrogen exhibit evidence for the formation of polar hydroxyl [OH-] bonds, which can block the movement of ions in the lattice and inhibit polarization. The possible sites for the incorporation of hydrogen are discussed in terms of ionic radii, and crystal structure. Dhote, A. verfasserin aut Auciello, O. verfasserin aut Im, J. verfasserin aut Ramesh, R. verfasserin aut Aggarwal, S. verfasserin aut Enthalten in Integrated ferroelectrics London [u.a.] : Taylor & Francis, 1992 27(1999), 1-4 vom: 01. Nov., Seite 147-157 Online-Ressource (DE-627)NLEJ253472598 (DE-600)2037916-X (DE-576)263253929 1607-8489 nnns number:1-4 volume:27 year:1999 month:11 day:01 pages:147-157 https://www.tib.eu/de/suchen/id/tandf%3Afce11bd34d3894e7815d8d27c0cd9197e7fbb32f Digitalisierung Deutschlandweit zugänglich ZDB-1-TFO GBV_NL_ARTICLE AR 1-4 27 1999 11 01 147-157 |
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10.1080/10584589908228464 doi (DE-627)NLEJ253478642 (TFO)752385015 DE-627 ger DE-627 rda eng Krauss, A. R. verfasserin aut Studies of hydrogen-induced degradation processes in Pb(Zr1-xTix)O3 (PZT) and SrBi2Ta2O9 (SBT) ferroelectric film-based capacitors 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The integration of PZT and SBT film-based capacitors with Si integrated circuit technology requires the use of processing steps that may degrade the performance of individual device components. Hydrogen annealing to remove damage in the Si FET adversely affects both PZT and SBT, although the mechanisms of degradation are different. We have used Mass spectroscopy of recoiled ions (MSRI), X-ray diffraction (XRD), Raman spectroscopy and electrical characterization to study the mechanisms of hydrogen-induced degradation in these two materials. The mechanism responsible for degradation in SBT during hydrogen annealing appears to be hydrogen-induced volatilization of Bi from the near-surface region during film growth. Although there is a similar, but smaller, loss of Pb in PZT, the resulting change in stoichiometry is not responsible for the degradation of the ferroelectric properties. Raman spectroscopy reveals that PZT films exposed to hydrogen exhibit evidence for the formation of polar hydroxyl [OH-] bonds, which can block the movement of ions in the lattice and inhibit polarization. The possible sites for the incorporation of hydrogen are discussed in terms of ionic radii, and crystal structure. Dhote, A. verfasserin aut Auciello, O. verfasserin aut Im, J. verfasserin aut Ramesh, R. verfasserin aut Aggarwal, S. verfasserin aut Enthalten in Integrated ferroelectrics London [u.a.] : Taylor & Francis, 1992 27(1999), 1-4 vom: 01. Nov., Seite 147-157 Online-Ressource (DE-627)NLEJ253472598 (DE-600)2037916-X (DE-576)263253929 1607-8489 nnns number:1-4 volume:27 year:1999 month:11 day:01 pages:147-157 https://www.tib.eu/de/suchen/id/tandf%3Afce11bd34d3894e7815d8d27c0cd9197e7fbb32f Digitalisierung Deutschlandweit zugänglich ZDB-1-TFO GBV_NL_ARTICLE AR 1-4 27 1999 11 01 147-157 |
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10.1080/10584589908228464 doi (DE-627)NLEJ253478642 (TFO)752385015 DE-627 ger DE-627 rda eng Krauss, A. R. verfasserin aut Studies of hydrogen-induced degradation processes in Pb(Zr1-xTix)O3 (PZT) and SrBi2Ta2O9 (SBT) ferroelectric film-based capacitors 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The integration of PZT and SBT film-based capacitors with Si integrated circuit technology requires the use of processing steps that may degrade the performance of individual device components. Hydrogen annealing to remove damage in the Si FET adversely affects both PZT and SBT, although the mechanisms of degradation are different. We have used Mass spectroscopy of recoiled ions (MSRI), X-ray diffraction (XRD), Raman spectroscopy and electrical characterization to study the mechanisms of hydrogen-induced degradation in these two materials. The mechanism responsible for degradation in SBT during hydrogen annealing appears to be hydrogen-induced volatilization of Bi from the near-surface region during film growth. Although there is a similar, but smaller, loss of Pb in PZT, the resulting change in stoichiometry is not responsible for the degradation of the ferroelectric properties. Raman spectroscopy reveals that PZT films exposed to hydrogen exhibit evidence for the formation of polar hydroxyl [OH-] bonds, which can block the movement of ions in the lattice and inhibit polarization. The possible sites for the incorporation of hydrogen are discussed in terms of ionic radii, and crystal structure. Dhote, A. verfasserin aut Auciello, O. verfasserin aut Im, J. verfasserin aut Ramesh, R. verfasserin aut Aggarwal, S. verfasserin aut Enthalten in Integrated ferroelectrics London [u.a.] : Taylor & Francis, 1992 27(1999), 1-4 vom: 01. Nov., Seite 147-157 Online-Ressource (DE-627)NLEJ253472598 (DE-600)2037916-X (DE-576)263253929 1607-8489 nnns number:1-4 volume:27 year:1999 month:11 day:01 pages:147-157 https://www.tib.eu/de/suchen/id/tandf%3Afce11bd34d3894e7815d8d27c0cd9197e7fbb32f Digitalisierung Deutschlandweit zugänglich ZDB-1-TFO GBV_NL_ARTICLE AR 1-4 27 1999 11 01 147-157 |
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10.1080/10584589908228464 doi (DE-627)NLEJ253478642 (TFO)752385015 DE-627 ger DE-627 rda eng Krauss, A. R. verfasserin aut Studies of hydrogen-induced degradation processes in Pb(Zr1-xTix)O3 (PZT) and SrBi2Ta2O9 (SBT) ferroelectric film-based capacitors 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The integration of PZT and SBT film-based capacitors with Si integrated circuit technology requires the use of processing steps that may degrade the performance of individual device components. Hydrogen annealing to remove damage in the Si FET adversely affects both PZT and SBT, although the mechanisms of degradation are different. We have used Mass spectroscopy of recoiled ions (MSRI), X-ray diffraction (XRD), Raman spectroscopy and electrical characterization to study the mechanisms of hydrogen-induced degradation in these two materials. The mechanism responsible for degradation in SBT during hydrogen annealing appears to be hydrogen-induced volatilization of Bi from the near-surface region during film growth. Although there is a similar, but smaller, loss of Pb in PZT, the resulting change in stoichiometry is not responsible for the degradation of the ferroelectric properties. Raman spectroscopy reveals that PZT films exposed to hydrogen exhibit evidence for the formation of polar hydroxyl [OH-] bonds, which can block the movement of ions in the lattice and inhibit polarization. The possible sites for the incorporation of hydrogen are discussed in terms of ionic radii, and crystal structure. Dhote, A. verfasserin aut Auciello, O. verfasserin aut Im, J. verfasserin aut Ramesh, R. verfasserin aut Aggarwal, S. verfasserin aut Enthalten in Integrated ferroelectrics London [u.a.] : Taylor & Francis, 1992 27(1999), 1-4 vom: 01. Nov., Seite 147-157 Online-Ressource (DE-627)NLEJ253472598 (DE-600)2037916-X (DE-576)263253929 1607-8489 nnns number:1-4 volume:27 year:1999 month:11 day:01 pages:147-157 https://www.tib.eu/de/suchen/id/tandf%3Afce11bd34d3894e7815d8d27c0cd9197e7fbb32f Digitalisierung Deutschlandweit zugänglich ZDB-1-TFO GBV_NL_ARTICLE AR 1-4 27 1999 11 01 147-157 |
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10.1080/10584589908228464 doi (DE-627)NLEJ253478642 (TFO)752385015 DE-627 ger DE-627 rda eng Krauss, A. R. verfasserin aut Studies of hydrogen-induced degradation processes in Pb(Zr1-xTix)O3 (PZT) and SrBi2Ta2O9 (SBT) ferroelectric film-based capacitors 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The integration of PZT and SBT film-based capacitors with Si integrated circuit technology requires the use of processing steps that may degrade the performance of individual device components. Hydrogen annealing to remove damage in the Si FET adversely affects both PZT and SBT, although the mechanisms of degradation are different. We have used Mass spectroscopy of recoiled ions (MSRI), X-ray diffraction (XRD), Raman spectroscopy and electrical characterization to study the mechanisms of hydrogen-induced degradation in these two materials. The mechanism responsible for degradation in SBT during hydrogen annealing appears to be hydrogen-induced volatilization of Bi from the near-surface region during film growth. Although there is a similar, but smaller, loss of Pb in PZT, the resulting change in stoichiometry is not responsible for the degradation of the ferroelectric properties. Raman spectroscopy reveals that PZT films exposed to hydrogen exhibit evidence for the formation of polar hydroxyl [OH-] bonds, which can block the movement of ions in the lattice and inhibit polarization. The possible sites for the incorporation of hydrogen are discussed in terms of ionic radii, and crystal structure. Dhote, A. verfasserin aut Auciello, O. verfasserin aut Im, J. verfasserin aut Ramesh, R. verfasserin aut Aggarwal, S. verfasserin aut Enthalten in Integrated ferroelectrics London [u.a.] : Taylor & Francis, 1992 27(1999), 1-4 vom: 01. Nov., Seite 147-157 Online-Ressource (DE-627)NLEJ253472598 (DE-600)2037916-X (DE-576)263253929 1607-8489 nnns number:1-4 volume:27 year:1999 month:11 day:01 pages:147-157 https://www.tib.eu/de/suchen/id/tandf%3Afce11bd34d3894e7815d8d27c0cd9197e7fbb32f Digitalisierung Deutschlandweit zugänglich ZDB-1-TFO GBV_NL_ARTICLE AR 1-4 27 1999 11 01 147-157 |
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studies of hydrogen-induced degradation processes in pb(zr1-xtix)o3 (pzt) and srbi2ta2o9 (sbt) ferroelectric film-based capacitors |
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Studies of hydrogen-induced degradation processes in Pb(Zr1-xTix)O3 (PZT) and SrBi2Ta2O9 (SBT) ferroelectric film-based capacitors |
| abstract |
The integration of PZT and SBT film-based capacitors with Si integrated circuit technology requires the use of processing steps that may degrade the performance of individual device components. Hydrogen annealing to remove damage in the Si FET adversely affects both PZT and SBT, although the mechanisms of degradation are different. We have used Mass spectroscopy of recoiled ions (MSRI), X-ray diffraction (XRD), Raman spectroscopy and electrical characterization to study the mechanisms of hydrogen-induced degradation in these two materials. The mechanism responsible for degradation in SBT during hydrogen annealing appears to be hydrogen-induced volatilization of Bi from the near-surface region during film growth. Although there is a similar, but smaller, loss of Pb in PZT, the resulting change in stoichiometry is not responsible for the degradation of the ferroelectric properties. Raman spectroscopy reveals that PZT films exposed to hydrogen exhibit evidence for the formation of polar hydroxyl [OH-] bonds, which can block the movement of ions in the lattice and inhibit polarization. The possible sites for the incorporation of hydrogen are discussed in terms of ionic radii, and crystal structure. |
| abstractGer |
The integration of PZT and SBT film-based capacitors with Si integrated circuit technology requires the use of processing steps that may degrade the performance of individual device components. Hydrogen annealing to remove damage in the Si FET adversely affects both PZT and SBT, although the mechanisms of degradation are different. We have used Mass spectroscopy of recoiled ions (MSRI), X-ray diffraction (XRD), Raman spectroscopy and electrical characterization to study the mechanisms of hydrogen-induced degradation in these two materials. The mechanism responsible for degradation in SBT during hydrogen annealing appears to be hydrogen-induced volatilization of Bi from the near-surface region during film growth. Although there is a similar, but smaller, loss of Pb in PZT, the resulting change in stoichiometry is not responsible for the degradation of the ferroelectric properties. Raman spectroscopy reveals that PZT films exposed to hydrogen exhibit evidence for the formation of polar hydroxyl [OH-] bonds, which can block the movement of ions in the lattice and inhibit polarization. The possible sites for the incorporation of hydrogen are discussed in terms of ionic radii, and crystal structure. |
| abstract_unstemmed |
The integration of PZT and SBT film-based capacitors with Si integrated circuit technology requires the use of processing steps that may degrade the performance of individual device components. Hydrogen annealing to remove damage in the Si FET adversely affects both PZT and SBT, although the mechanisms of degradation are different. We have used Mass spectroscopy of recoiled ions (MSRI), X-ray diffraction (XRD), Raman spectroscopy and electrical characterization to study the mechanisms of hydrogen-induced degradation in these two materials. The mechanism responsible for degradation in SBT during hydrogen annealing appears to be hydrogen-induced volatilization of Bi from the near-surface region during film growth. Although there is a similar, but smaller, loss of Pb in PZT, the resulting change in stoichiometry is not responsible for the degradation of the ferroelectric properties. Raman spectroscopy reveals that PZT films exposed to hydrogen exhibit evidence for the formation of polar hydroxyl [OH-] bonds, which can block the movement of ions in the lattice and inhibit polarization. The possible sites for the incorporation of hydrogen are discussed in terms of ionic radii, and crystal structure. |
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Studies of hydrogen-induced degradation processes in Pb(Zr1-xTix)O3 (PZT) and SrBi2Ta2O9 (SBT) ferroelectric film-based capacitors |
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https://www.tib.eu/de/suchen/id/tandf%3Afce11bd34d3894e7815d8d27c0cd9197e7fbb32f |
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Dhote, A. Auciello, O. Im, J. Ramesh, R. Aggarwal, S. |
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2024-07-06T00:12:17.774Z |
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