60° dislocations in (001) GaAs/Si interfaces
The geometry of 60° dislocations at the (001) GaAs/Si. heterojunction is discussed considering transmission electron microscopy images of plan-view samples. The GaAs examined was grown by molecular beam epitaxy on to a Si substrate, which had been polished to be 4° off the exact (001) plane, towards...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Jane G., Zhu [verfasserIn] C. Barry, Carter [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1990 |
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| Übergeordnetes Werk: |
Enthalten in: Philosophical magazine - London [u.a.] : Taylor and Francis, 1978, 62, 3, Seite 319-328 |
|---|---|
| Übergeordnetes Werk: |
volume:62 ; number:3 ; pages:319-328 |
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|---|
| DOI / URN: |
10.1080/01418619008242506 |
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NLEJ253742420 |
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| 520 | |a The geometry of 60° dislocations at the (001) GaAs/Si. heterojunction is discussed considering transmission electron microscopy images of plan-view samples. The GaAs examined was grown by molecular beam epitaxy on to a Si substrate, which had been polished to be 4° off the exact (001) plane, towards the [110] direction. Both 60° and pure edge dislocations may be present at the interface to accommodate the lattice misfit. The Burgers vectors of all the dislocations involved are ( a /2)(110). The 60° dislocations interact with the network of orthogonal edge dislocations which is present at the interface and cause displacements of the edge dislocations. Because of the tilt of the heterojunction away from the exact ⟨001⟩ plane, the density of these 60° dislocations along [110] direction is different from that along ] 1 10] direction. The changes in geometry when like 60° dislocations are dissociated is described. | ||
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10.1080/01418619008242506 doi (DE-627)NLEJ253742420 (TFO)8242506 DE-627 ger DE-627 rda eng Jane G., Zhu verfasserin aut 60° dislocations in (001) GaAs/Si interfaces 1990 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The geometry of 60° dislocations at the (001) GaAs/Si. heterojunction is discussed considering transmission electron microscopy images of plan-view samples. The GaAs examined was grown by molecular beam epitaxy on to a Si substrate, which had been polished to be 4° off the exact (001) plane, towards the [110] direction. Both 60° and pure edge dislocations may be present at the interface to accommodate the lattice misfit. The Burgers vectors of all the dislocations involved are ( a /2)(110). The 60° dislocations interact with the network of orthogonal edge dislocations which is present at the interface and cause displacements of the edge dislocations. Because of the tilt of the heterojunction away from the exact ⟨001⟩ plane, the density of these 60° dislocations along [110] direction is different from that along ] 1 10] direction. The changes in geometry when like 60° dislocations are dissociated is described. C. Barry, Carter verfasserin aut Enthalten in Philosophical magazine London [u.a.] : Taylor and Francis, 1978 62, 3, Seite 319-328 Online-Ressource (DE-627)NLEJ253724619 (DE-600)2001649-9 (DE-576)090880773 1460-6992 nnns volume:62 number:3 pages:319-328 https://www.tib.eu/de/suchen/id/tandf%3A4e4fe3b5c7e1b0e84986b9244baf0b71c9905a5f Digitalisierung Deutschlandweit zugänglich ZDB-1-TFO GBV_NL_ARTICLE AR 62 3 319-328 |
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10.1080/01418619008242506 doi (DE-627)NLEJ253742420 (TFO)8242506 DE-627 ger DE-627 rda eng Jane G., Zhu verfasserin aut 60° dislocations in (001) GaAs/Si interfaces 1990 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The geometry of 60° dislocations at the (001) GaAs/Si. heterojunction is discussed considering transmission electron microscopy images of plan-view samples. The GaAs examined was grown by molecular beam epitaxy on to a Si substrate, which had been polished to be 4° off the exact (001) plane, towards the [110] direction. Both 60° and pure edge dislocations may be present at the interface to accommodate the lattice misfit. The Burgers vectors of all the dislocations involved are ( a /2)(110). The 60° dislocations interact with the network of orthogonal edge dislocations which is present at the interface and cause displacements of the edge dislocations. Because of the tilt of the heterojunction away from the exact ⟨001⟩ plane, the density of these 60° dislocations along [110] direction is different from that along ] 1 10] direction. The changes in geometry when like 60° dislocations are dissociated is described. C. Barry, Carter verfasserin aut Enthalten in Philosophical magazine London [u.a.] : Taylor and Francis, 1978 62, 3, Seite 319-328 Online-Ressource (DE-627)NLEJ253724619 (DE-600)2001649-9 (DE-576)090880773 1460-6992 nnns volume:62 number:3 pages:319-328 https://www.tib.eu/de/suchen/id/tandf%3A4e4fe3b5c7e1b0e84986b9244baf0b71c9905a5f Digitalisierung Deutschlandweit zugänglich ZDB-1-TFO GBV_NL_ARTICLE AR 62 3 319-328 |
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10.1080/01418619008242506 doi (DE-627)NLEJ253742420 (TFO)8242506 DE-627 ger DE-627 rda eng Jane G., Zhu verfasserin aut 60° dislocations in (001) GaAs/Si interfaces 1990 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The geometry of 60° dislocations at the (001) GaAs/Si. heterojunction is discussed considering transmission electron microscopy images of plan-view samples. The GaAs examined was grown by molecular beam epitaxy on to a Si substrate, which had been polished to be 4° off the exact (001) plane, towards the [110] direction. Both 60° and pure edge dislocations may be present at the interface to accommodate the lattice misfit. The Burgers vectors of all the dislocations involved are ( a /2)(110). The 60° dislocations interact with the network of orthogonal edge dislocations which is present at the interface and cause displacements of the edge dislocations. Because of the tilt of the heterojunction away from the exact ⟨001⟩ plane, the density of these 60° dislocations along [110] direction is different from that along ] 1 10] direction. The changes in geometry when like 60° dislocations are dissociated is described. C. Barry, Carter verfasserin aut Enthalten in Philosophical magazine London [u.a.] : Taylor and Francis, 1978 62, 3, Seite 319-328 Online-Ressource (DE-627)NLEJ253724619 (DE-600)2001649-9 (DE-576)090880773 1460-6992 nnns volume:62 number:3 pages:319-328 https://www.tib.eu/de/suchen/id/tandf%3A4e4fe3b5c7e1b0e84986b9244baf0b71c9905a5f Digitalisierung Deutschlandweit zugänglich ZDB-1-TFO GBV_NL_ARTICLE AR 62 3 319-328 |
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10.1080/01418619008242506 doi (DE-627)NLEJ253742420 (TFO)8242506 DE-627 ger DE-627 rda eng Jane G., Zhu verfasserin aut 60° dislocations in (001) GaAs/Si interfaces 1990 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The geometry of 60° dislocations at the (001) GaAs/Si. heterojunction is discussed considering transmission electron microscopy images of plan-view samples. The GaAs examined was grown by molecular beam epitaxy on to a Si substrate, which had been polished to be 4° off the exact (001) plane, towards the [110] direction. Both 60° and pure edge dislocations may be present at the interface to accommodate the lattice misfit. The Burgers vectors of all the dislocations involved are ( a /2)(110). The 60° dislocations interact with the network of orthogonal edge dislocations which is present at the interface and cause displacements of the edge dislocations. Because of the tilt of the heterojunction away from the exact ⟨001⟩ plane, the density of these 60° dislocations along [110] direction is different from that along ] 1 10] direction. The changes in geometry when like 60° dislocations are dissociated is described. C. Barry, Carter verfasserin aut Enthalten in Philosophical magazine London [u.a.] : Taylor and Francis, 1978 62, 3, Seite 319-328 Online-Ressource (DE-627)NLEJ253724619 (DE-600)2001649-9 (DE-576)090880773 1460-6992 nnns volume:62 number:3 pages:319-328 https://www.tib.eu/de/suchen/id/tandf%3A4e4fe3b5c7e1b0e84986b9244baf0b71c9905a5f Digitalisierung Deutschlandweit zugänglich ZDB-1-TFO GBV_NL_ARTICLE AR 62 3 319-328 |
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10.1080/01418619008242506 doi (DE-627)NLEJ253742420 (TFO)8242506 DE-627 ger DE-627 rda eng Jane G., Zhu verfasserin aut 60° dislocations in (001) GaAs/Si interfaces 1990 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The geometry of 60° dislocations at the (001) GaAs/Si. heterojunction is discussed considering transmission electron microscopy images of plan-view samples. The GaAs examined was grown by molecular beam epitaxy on to a Si substrate, which had been polished to be 4° off the exact (001) plane, towards the [110] direction. Both 60° and pure edge dislocations may be present at the interface to accommodate the lattice misfit. The Burgers vectors of all the dislocations involved are ( a /2)(110). The 60° dislocations interact with the network of orthogonal edge dislocations which is present at the interface and cause displacements of the edge dislocations. Because of the tilt of the heterojunction away from the exact ⟨001⟩ plane, the density of these 60° dislocations along [110] direction is different from that along ] 1 10] direction. The changes in geometry when like 60° dislocations are dissociated is described. C. Barry, Carter verfasserin aut Enthalten in Philosophical magazine London [u.a.] : Taylor and Francis, 1978 62, 3, Seite 319-328 Online-Ressource (DE-627)NLEJ253724619 (DE-600)2001649-9 (DE-576)090880773 1460-6992 nnns volume:62 number:3 pages:319-328 https://www.tib.eu/de/suchen/id/tandf%3A4e4fe3b5c7e1b0e84986b9244baf0b71c9905a5f Digitalisierung Deutschlandweit zugänglich ZDB-1-TFO GBV_NL_ARTICLE AR 62 3 319-328 |
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60° dislocations in (001) GaAs/Si interfaces |
| abstract |
The geometry of 60° dislocations at the (001) GaAs/Si. heterojunction is discussed considering transmission electron microscopy images of plan-view samples. The GaAs examined was grown by molecular beam epitaxy on to a Si substrate, which had been polished to be 4° off the exact (001) plane, towards the [110] direction. Both 60° and pure edge dislocations may be present at the interface to accommodate the lattice misfit. The Burgers vectors of all the dislocations involved are ( a /2)(110). The 60° dislocations interact with the network of orthogonal edge dislocations which is present at the interface and cause displacements of the edge dislocations. Because of the tilt of the heterojunction away from the exact ⟨001⟩ plane, the density of these 60° dislocations along [110] direction is different from that along ] 1 10] direction. The changes in geometry when like 60° dislocations are dissociated is described. |
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The geometry of 60° dislocations at the (001) GaAs/Si. heterojunction is discussed considering transmission electron microscopy images of plan-view samples. The GaAs examined was grown by molecular beam epitaxy on to a Si substrate, which had been polished to be 4° off the exact (001) plane, towards the [110] direction. Both 60° and pure edge dislocations may be present at the interface to accommodate the lattice misfit. The Burgers vectors of all the dislocations involved are ( a /2)(110). The 60° dislocations interact with the network of orthogonal edge dislocations which is present at the interface and cause displacements of the edge dislocations. Because of the tilt of the heterojunction away from the exact ⟨001⟩ plane, the density of these 60° dislocations along [110] direction is different from that along ] 1 10] direction. The changes in geometry when like 60° dislocations are dissociated is described. |
| abstract_unstemmed |
The geometry of 60° dislocations at the (001) GaAs/Si. heterojunction is discussed considering transmission electron microscopy images of plan-view samples. The GaAs examined was grown by molecular beam epitaxy on to a Si substrate, which had been polished to be 4° off the exact (001) plane, towards the [110] direction. Both 60° and pure edge dislocations may be present at the interface to accommodate the lattice misfit. The Burgers vectors of all the dislocations involved are ( a /2)(110). The 60° dislocations interact with the network of orthogonal edge dislocations which is present at the interface and cause displacements of the edge dislocations. Because of the tilt of the heterojunction away from the exact ⟨001⟩ plane, the density of these 60° dislocations along [110] direction is different from that along ] 1 10] direction. The changes in geometry when like 60° dislocations are dissociated is described. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000naa a22002652 4500</leader><controlfield tag="001">NLEJ253742420</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20240215134413.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">240215s1990 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1080/01418619008242506</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)NLEJ253742420</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(TFO)8242506</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Jane G., Zhu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">60° dislocations in (001) GaAs/Si interfaces</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1990</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">The geometry of 60° dislocations at the (001) GaAs/Si. heterojunction is discussed considering transmission electron microscopy images of plan-view samples. The GaAs examined was grown by molecular beam epitaxy on to a Si substrate, which had been polished to be 4° off the exact (001) plane, towards the [110] direction. Both 60° and pure edge dislocations may be present at the interface to accommodate the lattice misfit. The Burgers vectors of all the dislocations involved are ( a /2)(110). The 60° dislocations interact with the network of orthogonal edge dislocations which is present at the interface and cause displacements of the edge dislocations. Because of the tilt of the heterojunction away from the exact ⟨001⟩ plane, the density of these 60° dislocations along [110] direction is different from that along ] 1 10] direction. The changes in geometry when like 60° dislocations are dissociated is described.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">C. Barry, Carter</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Philosophical magazine</subfield><subfield code="d">London [u.a.] : Taylor and Francis, 1978</subfield><subfield code="g">62, 3, Seite 319-328</subfield><subfield code="h">Online-Ressource</subfield><subfield code="w">(DE-627)NLEJ253724619</subfield><subfield code="w">(DE-600)2001649-9</subfield><subfield code="w">(DE-576)090880773</subfield><subfield code="x">1460-6992</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:62</subfield><subfield code="g">number:3</subfield><subfield code="g">pages:319-328</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://www.tib.eu/de/suchen/id/tandf%3A4e4fe3b5c7e1b0e84986b9244baf0b71c9905a5f</subfield><subfield code="x">Digitalisierung</subfield><subfield code="z">Deutschlandweit zugänglich</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-1-TFO</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_NL_ARTICLE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">62</subfield><subfield code="e">3</subfield><subfield code="h">319-328</subfield></datafield></record></collection>
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