Molecular Beam Epitaxial Growth of In0.15Ga0.85As Quantum Wells on (110) GaAs Surfaces

Gespeichert in:

Autor*in:	Someya, Takao [verfasserIn] Akiyama, Hidefumi Sakaki, Hiroyuki

Format:	Artikel

Erschienen:	1996

Systematik:	UA 4210.

Umfang:	4

Übergeordnetes Werk:	Enthalten in: Japanese journal of applied physics. Part 1, Regular papers, brief communications & review papers - Tokyo : Ōyō Butsuri Gakkai, 1982, 35(1996), 5, A, Seite 2544-2547
Übergeordnetes Werk:	volume:35 ; year:1996 ; number:5 ; supplement:A ; pages:2544-2547 ; extent:4

Katalog-ID:	OLC1500304247

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Molecular Beam Epitaxial Growth of In0.15Ga0.85As Quantum Wells on (110) GaAs Surfaces

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