Depth-Sensitive X-Ray Scattering Topographic Observation of InAs Grown by Molecular Beam Epitaxy on GaAs

Gespeichert in:

Autor*in:	Suzuki, Yoshifumi [verfasserIn] Chikaura, Yoshinori Kii, Hideki

Format:	Artikel

Erschienen:	1996

Systematik:	UA 4210.

Übergeordnetes Werk:	Enthalten in: Japanese journal of applied physics. Part 2, Letters & express letters - Tokyo : Ōyō Butsuri Gakkai, 1982, 35(1996), 10, A, Seite L1311
Übergeordnetes Werk:	volume:35 ; year:1996 ; number:10 ; supplement:A ; pages:L1311

Katalog-ID:	OLC1508584133

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spelling	SW961211 (DE-627)OLC1508584133 (DE-599)GBVOLC1508584133 DE-627 ger DE-627 rakwb 530 UA 4210. AVZ rvk Suzuki, Yoshifumi verfasserin aut Depth-Sensitive X-Ray Scattering Topographic Observation of InAs Grown by Molecular Beam Epitaxy on GaAs 1996 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Chikaura, Yoshinori oth Kii, Hideki oth Enthalten in Japanese journal of applied physics. Part 2, Letters & express letters Tokyo : Ōyō Butsuri Gakkai, 1982 35(1996), 10, A, Seite L1311 (DE-627)130626945 (DE-600)797295-7 (DE-576)016133277 0021-4922 nnns volume:35 year:1996 number:10 supplement:A pages:L1311 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_70 GBV_ILN_100 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2001 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2185 GBV_ILN_4036 GBV_ILN_4037 GBV_ILN_4082 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4317 GBV_ILN_4319 GBV_ILN_4700 UA 4210. AR 35 1996 10 A L1311
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Depth-Sensitive X-Ray Scattering Topographic Observation of InAs Grown by Molecular Beam Epitaxy on GaAs

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