Ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG) of Si1-xCx layers in Si fabricated by C ion implantation

Gespeichert in:

Autor*in:	Kobayashi, N. [verfasserIn] Zhu, D.H. Hasegawa, M. Katsumata, H. Tanaka, Y. Hayashi, N. Makita, Y. Shibata, H. Uekusa, S.

Format:	Artikel

Erschienen:	1997

Systematik:	UA 5680.

Umfang:	5

Übergeordnetes Werk:	Enthalten in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms - Amsterdam [u.a.] : Elsevier, 1984, 127(1997), Seite 350-354
Übergeordnetes Werk:	volume:127 ; year:1997 ; pages:350-354 ; extent:5

Katalog-ID:	OLC1519259239

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allfields	SW970709 (DE-627)OLC1519259239 (DE-599)GBVOLC1519259239 DE-627 ger DE-627 rakwb 530 UA 5680. AVZ rvk Kobayashi, N. verfasserin aut Ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG) of Si1-xCx layers in Si fabricated by C ion implantation 1997 5 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Zhu, D.H. oth Hasegawa, M. oth Katsumata, H. oth Tanaka, Y. oth Hayashi, N. oth Makita, Y. oth Shibata, H. oth Uekusa, S. oth Enthalten in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Amsterdam [u.a.] : Elsevier, 1984 127(1997), Seite 350-354 (DE-627)129862266 (DE-600)283666-X (DE-576)015173690 0168-583X nnns volume:127 year:1997 pages:350-354 extent:5 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_22 GBV_ILN_24 GBV_ILN_31 GBV_ILN_40 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4305 GBV_ILN_4700 UA 5680. AR 127 1997 350-354 5
spelling	SW970709 (DE-627)OLC1519259239 (DE-599)GBVOLC1519259239 DE-627 ger DE-627 rakwb 530 UA 5680. AVZ rvk Kobayashi, N. verfasserin aut Ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG) of Si1-xCx layers in Si fabricated by C ion implantation 1997 5 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Zhu, D.H. oth Hasegawa, M. oth Katsumata, H. oth Tanaka, Y. oth Hayashi, N. oth Makita, Y. oth Shibata, H. oth Uekusa, S. oth Enthalten in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Amsterdam [u.a.] : Elsevier, 1984 127(1997), Seite 350-354 (DE-627)129862266 (DE-600)283666-X (DE-576)015173690 0168-583X nnns volume:127 year:1997 pages:350-354 extent:5 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_22 GBV_ILN_24 GBV_ILN_31 GBV_ILN_40 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4305 GBV_ILN_4700 UA 5680. AR 127 1997 350-354 5
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allfieldsGer	SW970709 (DE-627)OLC1519259239 (DE-599)GBVOLC1519259239 DE-627 ger DE-627 rakwb 530 UA 5680. AVZ rvk Kobayashi, N. verfasserin aut Ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG) of Si1-xCx layers in Si fabricated by C ion implantation 1997 5 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Zhu, D.H. oth Hasegawa, M. oth Katsumata, H. oth Tanaka, Y. oth Hayashi, N. oth Makita, Y. oth Shibata, H. oth Uekusa, S. oth Enthalten in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Amsterdam [u.a.] : Elsevier, 1984 127(1997), Seite 350-354 (DE-627)129862266 (DE-600)283666-X (DE-576)015173690 0168-583X nnns volume:127 year:1997 pages:350-354 extent:5 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_22 GBV_ILN_24 GBV_ILN_31 GBV_ILN_40 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4305 GBV_ILN_4700 UA 5680. AR 127 1997 350-354 5
allfieldsSound	SW970709 (DE-627)OLC1519259239 (DE-599)GBVOLC1519259239 DE-627 ger DE-627 rakwb 530 UA 5680. AVZ rvk Kobayashi, N. verfasserin aut Ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG) of Si1-xCx layers in Si fabricated by C ion implantation 1997 5 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Zhu, D.H. oth Hasegawa, M. oth Katsumata, H. oth Tanaka, Y. oth Hayashi, N. oth Makita, Y. oth Shibata, H. oth Uekusa, S. oth Enthalten in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Amsterdam [u.a.] : Elsevier, 1984 127(1997), Seite 350-354 (DE-627)129862266 (DE-600)283666-X (DE-576)015173690 0168-583X nnns volume:127 year:1997 pages:350-354 extent:5 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_22 GBV_ILN_24 GBV_ILN_31 GBV_ILN_40 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4305 GBV_ILN_4700 UA 5680. AR 127 1997 350-354 5
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title	Ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG) of Si1-xCx layers in Si fabricated by C ion implantation
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title_full	Ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG) of Si1-xCx layers in Si fabricated by C ion implantation
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title_sort	ion-beam-induced epitaxial crystallization (ibiec) and solid phase epitaxial growth (speg) of si1-xcx layers in si fabricated by c ion implantation
title_auth	Ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG) of Si1-xCx layers in Si fabricated by C ion implantation
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title_short	Ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG) of Si1-xCx layers in Si fabricated by C ion implantation
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up_date	2024-07-03T21:12:45.442Z
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Ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG) of Si1-xCx layers in Si fabricated by C ion implantation

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