Theoretical Analysis of the Conduction Mechanism of Thin Oxide-Nitride-Oxide Films at Low Voltages by the WKB Approximation

Gespeichert in:

Autor*in:	Matsuo, Naoto [verfasserIn] Fujiwara, Hiroaki Miyoshi, Tadaki

Format:	Artikel

Erschienen:	1997

Umfang:	8

Übergeordnetes Werk:	Enthalten in: Electronics and communications in Japan / 2 - New York, NY : Scripta Publ. Co., 1985, 80(1997), 4, Seite 9-16
Übergeordnetes Werk:	volume:80 ; year:1997 ; number:4 ; pages:9-16 ; extent:8

Katalog-ID:	OLC1527201619

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title_sort	theoretical analysis of the conduction mechanism of thin oxide-nitride-oxide films at low voltages by the wkb approximation
title_auth	Theoretical Analysis of the Conduction Mechanism of Thin Oxide-Nitride-Oxide Films at Low Voltages by the WKB Approximation
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Theoretical Analysis of the Conduction Mechanism of Thin Oxide-Nitride-Oxide Films at Low Voltages by the WKB Approximation

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