Thermally assisted hole tunneling at the Au-Si3N4 interface and the energy-band diagram of metal-nitride-oxide-semiconductor structures

Gespeichert in:

Autor*in:	Gritsenko, V.A. [verfasserIn] Meerson, E.E. Morokov, Yu N.

Format:	Artikel

Erschienen:	1998

Systematik:	UA 6500.

Übergeordnetes Werk:	Enthalten in: Physical review / B - Ridge, NY : APS, 1970, 57(1998), 4, Seite R2081
Übergeordnetes Werk:	volume:57 ; year:1998 ; number:4 ; pages:R2081

Katalog-ID:	OLC1529703360

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author-letter	Gritsenko, V.A.
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title_sort	thermally assisted hole tunneling at the au-si3n4 interface and the energy-band diagram of metal-nitride-oxide-semiconductor structures
title_auth	Thermally assisted hole tunneling at the Au-Si3N4 interface and the energy-band diagram of metal-nitride-oxide-semiconductor structures
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title_short	Thermally assisted hole tunneling at the Au-Si3N4 interface and the energy-band diagram of metal-nitride-oxide-semiconductor structures
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author2	Meerson, E.E. Morokov, Yu N.
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up_date	2024-07-03T22:00:16.466Z
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Thermally assisted hole tunneling at the Au-Si3N4 interface and the energy-band diagram of metal-nitride-oxide-semiconductor structures

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