Differential gain and threshold current of 1.3 mm tensile-strained InGaAsP multi quantum well buried-heterostructure lasers grown by metalorganic molecular beam epitaxial growth

Gespeichert in:

Autor*in:	Itoh, Masayuki [verfasserIn] Sugiura, Hideo Yasaka, Hiroshi Kondo, Yasuhiro Kishi, Kenji Fukuda, Mitsuo Itaya, Yoshio

Format:	Artikel

Erschienen:	1998

Umfang:	3

Übergeordnetes Werk:	Enthalten in: Applied physics letters - Melville, NY : AIP, 1962, 72(1998), 13, Seite 1553-1555
Übergeordnetes Werk:	volume:72 ; year:1998 ; number:13 ; pages:1553-1555 ; extent:3

Katalog-ID:	OLC1532532172

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allfieldsSound	SW980414 (DE-627)OLC1532532172 (DE-599)GBVOLC1532532172 DE-627 ger DE-627 rakwb 530 Itoh, Masayuki verfasserin aut Differential gain and threshold current of 1.3 mm tensile-strained InGaAsP multi quantum well buried-heterostructure lasers grown by metalorganic molecular beam epitaxial growth 1998 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Sugiura, Hideo oth Yasaka, Hiroshi oth Kondo, Yasuhiro oth Kishi, Kenji oth Fukuda, Mitsuo oth Itaya, Yoshio oth Enthalten in Applied physics letters Melville, NY : AIP, 1962 72(1998), 13, Seite 1553-1555 (DE-627)12951568X (DE-600)211245-0 (DE-576)014926210 0003-6951 nnns volume:72 year:1998 number:13 pages:1553-1555 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_55 GBV_ILN_59 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2016 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2192 GBV_ILN_2221 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4036 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 72 1998 13 1553-1555 3
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author-letter	Itoh, Masayuki
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title_sort	differential gain and threshold current of 1.3 mm tensile-strained ingaasp multi quantum well buried-heterostructure lasers grown by metalorganic molecular beam epitaxial growth
title_auth	Differential gain and threshold current of 1.3 mm tensile-strained InGaAsP multi quantum well buried-heterostructure lasers grown by metalorganic molecular beam epitaxial growth
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container_issue	13
title_short	Differential gain and threshold current of 1.3 mm tensile-strained InGaAsP multi quantum well buried-heterostructure lasers grown by metalorganic molecular beam epitaxial growth
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author2	Sugiura, Hideo Yasaka, Hiroshi Kondo, Yasuhiro Kishi, Kenji Fukuda, Mitsuo Itaya, Yoshio
author2Str	Sugiura, Hideo Yasaka, Hiroshi Kondo, Yasuhiro Kishi, Kenji Fukuda, Mitsuo Itaya, Yoshio
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author2_role	oth oth oth oth oth oth
up_date	2024-07-03T16:09:15.473Z
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Differential gain and threshold current of 1.3 mm tensile-strained InGaAsP multi quantum well buried-heterostructure lasers grown by metalorganic molecular beam epitaxial growth

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