High energy ion implantation induced electrical effects in bulk amorphous As2Se3

Gespeichert in:

Autor*in:	Singh, Mahender [verfasserIn] Bhatia, K.L. Kishore, Nawal Kundu, R.S. Kanjilal, D.

Format:	Artikel

Erschienen:	1998

Systematik:	UA 5680.

Umfang:	12

Übergeordnetes Werk:	Enthalten in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms - Amsterdam [u.a.] : Elsevier, 1984, 140(1998), 3, Seite 349-360
Übergeordnetes Werk:	volume:140 ; year:1998 ; number:3 ; pages:349-360 ; extent:12

Katalog-ID:	OLC1535298790

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High energy ion implantation induced electrical effects in bulk amorphous As2Se3

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