The nature of the light hole potential profile in GaAs-InGaAs double quantum well structures

Gespeichert in:

Autor*in:	Moran, M. [verfasserIn] Dawson, P. Moore, K.J.

Format:	Artikel

Erschienen:	1998

Umfang:	6

Übergeordnetes Werk:	Enthalten in: Solid state communications - New York, NY [u.a.] : Elsevier Science, 1963, 107(1998), 3, Seite 119-124
Übergeordnetes Werk:	volume:107 ; year:1998 ; number:3 ; pages:119-124 ; extent:6

Katalog-ID:	OLC1536118516

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The nature of the light hole potential profile in GaAs-InGaAs double quantum well structures

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