Thermally stimulated characterization of shallow traps in the SiC-Si heterojunction

Gespeichert in:

Autor*in:	Lysenko, V.S. [verfasserIn] Tyagulski, I.P. Gomeniuk, Y.V. Osiyuk, I.N. Tkach, I.I.

Format:	Artikel

Erschienen:	1998

Umfang:	5

Übergeordnetes Werk:	Enthalten in: Journal of physics. D, Applied physics - Bristol : IOP Publ., 1970, 31(1998), 13, Seite 1499-1503
Übergeordnetes Werk:	volume:31 ; year:1998 ; number:13 ; pages:1499-1503 ; extent:5

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Thermally stimulated characterization of shallow traps in the SiC-Si heterojunction

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