Electrical properties of extremely low doped GaSb Schottky diodes

Gespeichert in:

Autor*in:	Mason, Whitney [verfasserIn] Waterman, J.R.

Format:	Artikel

Erschienen:	1998

Umfang:	4

Übergeordnetes Werk:	Enthalten in: Journal of applied physics - Melville, NY : AIP, 1937, 84(1998), 3, Seite 1426-1429
Übergeordnetes Werk:	volume:84 ; year:1998 ; number:3 ; pages:1426-1429 ; extent:4

Katalog-ID:	OLC1538536412

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spelling	SW980805 (DE-627)OLC1538536412 (DE-599)GBVOLC1538536412 DE-627 ger DE-627 rakwb 530 Mason, Whitney verfasserin aut Electrical properties of extremely low doped GaSb Schottky diodes 1998 4 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Waterman, J.R. oth Enthalten in Journal of applied physics Melville, NY : AIP, 1937 84(1998), 3, Seite 1426-1429 (DE-627)129079030 (DE-600)3112-4 (DE-576)014411652 0021-8979 nnns volume:84 year:1998 number:3 pages:1426-1429 extent:4 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2185 GBV_ILN_2221 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 84 1998 3 1426-1429 4
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Electrical properties of extremely low doped GaSb Schottky diodes

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