Analysis of MBE growth mode for GaN epilayers by RHEED

Gespeichert in:

Autor*in:	Okumura, Hajime [verfasserIn] Balakrishnan, Krishnan Hamaguchi, Hiroshi Koizumi, Takayoshi Chichibu, Shigefusa Nakanishi, Hisayuki Nagatomo, Takao Yoshida, Sadafumi

Format:	Artikel

Erschienen:	1998

Umfang:	6

Übergeordnetes Werk:	Enthalten in: Journal of crystal growth - Amsterdam [u.a.] : Elsevier, 1967, 189(1998), Seite 364-369
Übergeordnetes Werk:	volume:189 ; year:1998 ; pages:364-369 ; extent:6

Katalog-ID:	OLC1538653524

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spelling	SW980807 (DE-627)OLC1538653524 (DE-599)GBVOLC1538653524 DE-627 ger DE-627 rakwb 540 Okumura, Hajime verfasserin aut Analysis of MBE growth mode for GaN epilayers by RHEED 1998 6 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Balakrishnan, Krishnan oth Hamaguchi, Hiroshi oth Koizumi, Takayoshi oth Chichibu, Shigefusa oth Nakanishi, Hisayuki oth Nagatomo, Takao oth Yoshida, Sadafumi oth Enthalten in Journal of crystal growth Amsterdam [u.a.] : Elsevier, 1967 189(1998), Seite 364-369 (DE-627)129078514 (DE-600)3043-0 (DE-576)014411075 0022-0248 nnns volume:189 year:1998 pages:364-369 extent:6 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-GEO SSG-OLC-PHA SSG-OLC-DE-84 SSG-OPC-GGO GBV_ILN_22 GBV_ILN_30 GBV_ILN_40 GBV_ILN_65 GBV_ILN_70 GBV_ILN_130 GBV_ILN_2004 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2185 GBV_ILN_4012 GBV_ILN_4028 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4306 GBV_ILN_4315 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 189 1998 364-369 6
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allfieldsGer	SW980807 (DE-627)OLC1538653524 (DE-599)GBVOLC1538653524 DE-627 ger DE-627 rakwb 540 Okumura, Hajime verfasserin aut Analysis of MBE growth mode for GaN epilayers by RHEED 1998 6 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Balakrishnan, Krishnan oth Hamaguchi, Hiroshi oth Koizumi, Takayoshi oth Chichibu, Shigefusa oth Nakanishi, Hisayuki oth Nagatomo, Takao oth Yoshida, Sadafumi oth Enthalten in Journal of crystal growth Amsterdam [u.a.] : Elsevier, 1967 189(1998), Seite 364-369 (DE-627)129078514 (DE-600)3043-0 (DE-576)014411075 0022-0248 nnns volume:189 year:1998 pages:364-369 extent:6 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-GEO SSG-OLC-PHA SSG-OLC-DE-84 SSG-OPC-GGO GBV_ILN_22 GBV_ILN_30 GBV_ILN_40 GBV_ILN_65 GBV_ILN_70 GBV_ILN_130 GBV_ILN_2004 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2185 GBV_ILN_4012 GBV_ILN_4028 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4306 GBV_ILN_4315 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 189 1998 364-369 6
allfieldsSound	SW980807 (DE-627)OLC1538653524 (DE-599)GBVOLC1538653524 DE-627 ger DE-627 rakwb 540 Okumura, Hajime verfasserin aut Analysis of MBE growth mode for GaN epilayers by RHEED 1998 6 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Balakrishnan, Krishnan oth Hamaguchi, Hiroshi oth Koizumi, Takayoshi oth Chichibu, Shigefusa oth Nakanishi, Hisayuki oth Nagatomo, Takao oth Yoshida, Sadafumi oth Enthalten in Journal of crystal growth Amsterdam [u.a.] : Elsevier, 1967 189(1998), Seite 364-369 (DE-627)129078514 (DE-600)3043-0 (DE-576)014411075 0022-0248 nnns volume:189 year:1998 pages:364-369 extent:6 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-GEO SSG-OLC-PHA SSG-OLC-DE-84 SSG-OPC-GGO GBV_ILN_22 GBV_ILN_30 GBV_ILN_40 GBV_ILN_65 GBV_ILN_70 GBV_ILN_130 GBV_ILN_2004 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2185 GBV_ILN_4012 GBV_ILN_4028 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4306 GBV_ILN_4315 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 189 1998 364-369 6
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Analysis of MBE growth mode for GaN epilayers by RHEED

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