Semiconductors I: Bulk - Enhanced activation of implanted dopant impurity in hydrogenated crystalline silicon

Gespeichert in:

Autor*in:	Nazarov, A.N. [verfasserIn] Pinchuk, V.M. Lysenko, V.S. Yanchuk, T.V. Ashok, S.

Format:	Artikel

Erschienen:	1998

Systematik:	UA 6500.

Umfang:	4

Übergeordnetes Werk:	Enthalten in: Physical review / B - Ridge, NY : APS, 1970, 58(1998), 7, Seite 3522-3525
Übergeordnetes Werk:	volume:58 ; year:1998 ; number:7 ; pages:3522-3525 ; extent:4

Katalog-ID:	OLC1539814920

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allfields	SW980828 (DE-627)OLC1539814920 (DE-599)GBVOLC1539814920 DE-627 ger DE-627 rakwb 530 UA 6500. AVZ rvk Nazarov, A.N. verfasserin aut Semiconductors I: Bulk - Enhanced activation of implanted dopant impurity in hydrogenated crystalline silicon 1998 4 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Pinchuk, V.M. oth Lysenko, V.S. oth Yanchuk, T.V. oth Ashok, S. oth Enthalten in Physical review / B Ridge, NY : APS, 1970 58(1998), 7, Seite 3522-3525 (DE-627)129508640 (DE-600)209770-9 (DE-576)014914921 2469-9950 nnns volume:58 year:1998 number:7 pages:3522-3525 extent:4 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_1 GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_105 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_2016 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2095 GBV_ILN_2185 GBV_ILN_2221 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 UA 6500. AR 58 1998 7 3522-3525 4
spelling	SW980828 (DE-627)OLC1539814920 (DE-599)GBVOLC1539814920 DE-627 ger DE-627 rakwb 530 UA 6500. AVZ rvk Nazarov, A.N. verfasserin aut Semiconductors I: Bulk - Enhanced activation of implanted dopant impurity in hydrogenated crystalline silicon 1998 4 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Pinchuk, V.M. oth Lysenko, V.S. oth Yanchuk, T.V. oth Ashok, S. oth Enthalten in Physical review / B Ridge, NY : APS, 1970 58(1998), 7, Seite 3522-3525 (DE-627)129508640 (DE-600)209770-9 (DE-576)014914921 2469-9950 nnns volume:58 year:1998 number:7 pages:3522-3525 extent:4 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_1 GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_105 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_2016 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2095 GBV_ILN_2185 GBV_ILN_2221 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 UA 6500. AR 58 1998 7 3522-3525 4
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allfieldsGer	SW980828 (DE-627)OLC1539814920 (DE-599)GBVOLC1539814920 DE-627 ger DE-627 rakwb 530 UA 6500. AVZ rvk Nazarov, A.N. verfasserin aut Semiconductors I: Bulk - Enhanced activation of implanted dopant impurity in hydrogenated crystalline silicon 1998 4 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Pinchuk, V.M. oth Lysenko, V.S. oth Yanchuk, T.V. oth Ashok, S. oth Enthalten in Physical review / B Ridge, NY : APS, 1970 58(1998), 7, Seite 3522-3525 (DE-627)129508640 (DE-600)209770-9 (DE-576)014914921 2469-9950 nnns volume:58 year:1998 number:7 pages:3522-3525 extent:4 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_1 GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_105 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_2016 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2095 GBV_ILN_2185 GBV_ILN_2221 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 UA 6500. AR 58 1998 7 3522-3525 4
allfieldsSound	SW980828 (DE-627)OLC1539814920 (DE-599)GBVOLC1539814920 DE-627 ger DE-627 rakwb 530 UA 6500. AVZ rvk Nazarov, A.N. verfasserin aut Semiconductors I: Bulk - Enhanced activation of implanted dopant impurity in hydrogenated crystalline silicon 1998 4 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Pinchuk, V.M. oth Lysenko, V.S. oth Yanchuk, T.V. oth Ashok, S. oth Enthalten in Physical review / B Ridge, NY : APS, 1970 58(1998), 7, Seite 3522-3525 (DE-627)129508640 (DE-600)209770-9 (DE-576)014914921 2469-9950 nnns volume:58 year:1998 number:7 pages:3522-3525 extent:4 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_1 GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_105 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_2016 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2095 GBV_ILN_2185 GBV_ILN_2221 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 UA 6500. AR 58 1998 7 3522-3525 4
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title	Semiconductors I: Bulk - Enhanced activation of implanted dopant impurity in hydrogenated crystalline silicon
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title_full	Semiconductors I: Bulk - Enhanced activation of implanted dopant impurity in hydrogenated crystalline silicon
author_sort	Nazarov, A.N.
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title_sort	semiconductors i: bulk - enhanced activation of implanted dopant impurity in hydrogenated crystalline silicon
title_auth	Semiconductors I: Bulk - Enhanced activation of implanted dopant impurity in hydrogenated crystalline silicon
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title_short	Semiconductors I: Bulk - Enhanced activation of implanted dopant impurity in hydrogenated crystalline silicon
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author2	Pinchuk, V.M. Lysenko, V.S. Yanchuk, T.V. Ashok, S.
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