Semiconductors II: Surfaces, interfaces, microstructures, and related topics - Electrical band-gap energy of porous silicon and the band offsets at the porous-silicon-crystalline-silicon heterojunction measured versus sample temperature

Gespeichert in:

Autor*in:	Frederiksen, J.T. [verfasserIn] Melcher, P.G. Veje, E.

Format:	Artikel

Erschienen:	1998

Systematik:	UA 6500.

Umfang:	5

Übergeordnetes Werk:	Enthalten in: Physical review / B - Ridge, NY : APS, 1970, 58(1998), 12, Seite 8020-8024
Übergeordnetes Werk:	volume:58 ; year:1998 ; number:12 ; pages:8020-8024 ; extent:5

Katalog-ID:	OLC1541480023

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author	Frederiksen, J.T.
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title	Semiconductors II: Surfaces, interfaces, microstructures, and related topics - Electrical band-gap energy of porous silicon and the band offsets at the porous-silicon-crystalline-silicon heterojunction measured versus sample temperature
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title_full	Semiconductors II: Surfaces, interfaces, microstructures, and related topics - Electrical band-gap energy of porous silicon and the band offsets at the porous-silicon-crystalline-silicon heterojunction measured versus sample temperature
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title_sort	semiconductors ii: surfaces, interfaces, microstructures, and related topics - electrical band-gap energy of porous silicon and the band offsets at the porous-silicon-crystalline-silicon heterojunction measured versus sample temperature
title_auth	Semiconductors II: Surfaces, interfaces, microstructures, and related topics - Electrical band-gap energy of porous silicon and the band offsets at the porous-silicon-crystalline-silicon heterojunction measured versus sample temperature
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title_short	Semiconductors II: Surfaces, interfaces, microstructures, and related topics - Electrical band-gap energy of porous silicon and the band offsets at the porous-silicon-crystalline-silicon heterojunction measured versus sample temperature
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