Letters - Semiconductors - Thermal Stability of Low-Temperature GaN and AlN Buffer Layers During Metalorganic Vapor Phase Epitaxy Monitored by In Situ Shallow-Angle Reflectance Using Ultraviolet Light
Gespeichert in:
| Autor*in: |
Kobayashi, Yasuyuki [verfasserIn] |
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| Format: |
Artikel |
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| Systematik: |
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| Übergeordnetes Werk: |
Enthalten in: Japanese journal of applied physics. Part 2, Letters & express letters - Tokyo : Ōyō Butsuri Gakkai, 1982, 19980, 03700, Seite L1208 |
|---|---|
| Übergeordnetes Werk: |
volume:19980 ; supplement:03700 ; pages:L1208 |
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letters - semiconductors - thermal stability of low-temperature gan and aln buffer layers during metalorganic vapor phase epitaxy monitored by in situ shallow-angle reflectance using ultraviolet light |
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