Scaling of gate length in ultra-short channel heterostructure field effect transistors

Gespeichert in:

Autor*in:	Han, Jaeheon [verfasserIn] Ferry, David K.

Format:	Artikel

Erschienen:	1999

Umfang:	8

Übergeordnetes Werk:	Enthalten in: Solid state electronics - Amsterdam [u.a.] : Elsevier, 1960, 43(1999), 2, Seite 335-342
Übergeordnetes Werk:	volume:43 ; year:1999 ; number:2 ; pages:335-342 ; extent:8

Katalog-ID:	OLC1547308095

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Scaling of gate length in ultra-short channel heterostructure field effect transistors

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