INTERDISCIPLINARY PHYSICS (PACS 81-98) - Analysis of conduction mechanisms in annealed n-Si1-xCx:H-p-crystalline Si heterojunction diodes for different doping concentrations

Gespeichert in:

Autor*in:	Marsal, L.F. [verfasserIn] Pallares, J. Correig, X. Orpella, A. Bardés, D. Alcubilla, R.

Format:	Artikel

Erschienen:	1999

Umfang:	6

Übergeordnetes Werk:	Enthalten in: Journal of applied physics - Melville, NY : AIP, 1937, 85(1999), 2, Seite 1216-1221
Übergeordnetes Werk:	volume:85 ; year:1999 ; number:2 ; pages:1216-1221 ; extent:6

Katalog-ID:	OLC1547511710

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allfields	SW990110 (DE-627)OLC1547511710 (DE-599)GBVOLC1547511710 DE-627 ger DE-627 rakwb 530 Marsal, L.F. verfasserin aut INTERDISCIPLINARY PHYSICS (PACS 81-98) - Analysis of conduction mechanisms in annealed n-Si1-xCx:H-p-crystalline Si heterojunction diodes for different doping concentrations 1999 6 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Pallares, J. oth Correig, X. oth Orpella, A. oth Bardés, D. oth Alcubilla, R. oth Enthalten in Journal of applied physics Melville, NY : AIP, 1937 85(1999), 2, Seite 1216-1221 (DE-627)129079030 (DE-600)3112-4 (DE-576)014411652 0021-8979 nnns volume:85 year:1999 number:2 pages:1216-1221 extent:6 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2185 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 85 1999 2 1216-1221 6
spelling	SW990110 (DE-627)OLC1547511710 (DE-599)GBVOLC1547511710 DE-627 ger DE-627 rakwb 530 Marsal, L.F. verfasserin aut INTERDISCIPLINARY PHYSICS (PACS 81-98) - Analysis of conduction mechanisms in annealed n-Si1-xCx:H-p-crystalline Si heterojunction diodes for different doping concentrations 1999 6 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Pallares, J. oth Correig, X. oth Orpella, A. oth Bardés, D. oth Alcubilla, R. oth Enthalten in Journal of applied physics Melville, NY : AIP, 1937 85(1999), 2, Seite 1216-1221 (DE-627)129079030 (DE-600)3112-4 (DE-576)014411652 0021-8979 nnns volume:85 year:1999 number:2 pages:1216-1221 extent:6 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2185 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 85 1999 2 1216-1221 6
allfields_unstemmed	SW990110 (DE-627)OLC1547511710 (DE-599)GBVOLC1547511710 DE-627 ger DE-627 rakwb 530 Marsal, L.F. verfasserin aut INTERDISCIPLINARY PHYSICS (PACS 81-98) - Analysis of conduction mechanisms in annealed n-Si1-xCx:H-p-crystalline Si heterojunction diodes for different doping concentrations 1999 6 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Pallares, J. oth Correig, X. oth Orpella, A. oth Bardés, D. oth Alcubilla, R. oth Enthalten in Journal of applied physics Melville, NY : AIP, 1937 85(1999), 2, Seite 1216-1221 (DE-627)129079030 (DE-600)3112-4 (DE-576)014411652 0021-8979 nnns volume:85 year:1999 number:2 pages:1216-1221 extent:6 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2185 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 85 1999 2 1216-1221 6
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allfieldsSound	SW990110 (DE-627)OLC1547511710 (DE-599)GBVOLC1547511710 DE-627 ger DE-627 rakwb 530 Marsal, L.F. verfasserin aut INTERDISCIPLINARY PHYSICS (PACS 81-98) - Analysis of conduction mechanisms in annealed n-Si1-xCx:H-p-crystalline Si heterojunction diodes for different doping concentrations 1999 6 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Pallares, J. oth Correig, X. oth Orpella, A. oth Bardés, D. oth Alcubilla, R. oth Enthalten in Journal of applied physics Melville, NY : AIP, 1937 85(1999), 2, Seite 1216-1221 (DE-627)129079030 (DE-600)3112-4 (DE-576)014411652 0021-8979 nnns volume:85 year:1999 number:2 pages:1216-1221 extent:6 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2185 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 85 1999 2 1216-1221 6
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title	INTERDISCIPLINARY PHYSICS (PACS 81-98) - Analysis of conduction mechanisms in annealed n-Si1-xCx:H-p-crystalline Si heterojunction diodes for different doping concentrations
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title_short	INTERDISCIPLINARY PHYSICS (PACS 81-98) - Analysis of conduction mechanisms in annealed n-Si1-xCx:H-p-crystalline Si heterojunction diodes for different doping concentrations
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up_date	2024-07-03T14:20:53.571Z
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INTERDISCIPLINARY PHYSICS (PACS 81-98) - Analysis of conduction mechanisms in annealed n-Si1-xCx:H-p-crystalline Si heterojunction diodes for different doping concentrations

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