Effects of electric field concentration on resonant tunneling of asymmetric oxide-nitride-oxide films

Gespeichert in:

Autor*in:	Matsuo, Naoto [verfasserIn] Miura, Takashi Fujiwara, Hiroaki Miyoshi, Tadaki

Format:	Artikel

Erschienen:	1999

Umfang:	6

Übergeordnetes Werk:	Enthalten in: Solid state electronics - Amsterdam [u.a.] : Elsevier, 1960, 43(1999), 3, Seite 653-658
Übergeordnetes Werk:	volume:43 ; year:1999 ; number:3 ; pages:653-658 ; extent:6

Katalog-ID:	OLC155011400X

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title_short	Effects of electric field concentration on resonant tunneling of asymmetric oxide-nitride-oxide films
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Effects of electric field concentration on resonant tunneling of asymmetric oxide-nitride-oxide films

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