Effect of Hydrogen on Electrical Characteristics of MOS Structures with a Thin Insulator for Tunneling
Gespeichert in:
| Autor*in: |
Gaman, V. I. [verfasserIn] |
|---|
| Format: |
Artikel |
|---|
| Erschienen: |
1997 |
|---|
| Übergeordnetes Werk: |
Enthalten in: Surface investigation, x-ray, synchrotron and neutron techniques - New York, NY : Gordon and Breach, 1996, 12(1997), 11, Seite 1297-1308 |
|---|---|
| Übergeordnetes Werk: |
volume:12 ; year:1997 ; number:11 ; pages:1297-1308 |
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