ARTICLES - A study of the dislocations in Si-doped GaAs comparing diluted Sirtl light etching, electron-beam-induced current, and micro-Raman techniques

Gespeichert in:

Autor*in:	Martin, P. [verfasserIn] Jiménez, J. Frigeri, C. Sanz, L.F. Weyher, J.L.

Format:	Artikel

Erschienen:	1999

Systematik:	VA 5350

Umfang:	12

Übergeordnetes Werk:	Enthalten in: Journal of materials research - Warrendale, Pa. : Materials Research Society, 1986, 14(1999), 5, Seite 1732-1743
Übergeordnetes Werk:	volume:14 ; year:1999 ; number:5 ; pages:1732-1743 ; extent:12

Katalog-ID:	OLC1553443780

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ARTICLES - A study of the dislocations in Si-doped GaAs comparing diluted Sirtl light etching, electron-beam-induced current, and micro-Raman techniques

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