ARTICLES - Semiconductors II: Surfaces, interfaces, microstructures, and related topics - Electronic density of empty states of Ge-Si(111) epitaxial layers: Theory and experiment

Gespeichert in:

Autor*in:	Castrucci, P. [verfasserIn] Gunnella, R. Crescenzi, M.De Sacchi, M. Dufour, G. Rochet, F.

Format:	Artikel

Erschienen:	1999

Systematik:	UA 6500.

Umfang:	11

Übergeordnetes Werk:	Enthalten in: Physical review / B - Ridge, NY : APS, 1970, 60(1999), 8, Seite 5759-5769
Übergeordnetes Werk:	volume:60 ; year:1999 ; number:8 ; pages:5759-5769 ; extent:11

Katalog-ID:	OLC1559288949

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title	ARTICLES - Semiconductors II: Surfaces, interfaces, microstructures, and related topics - Electronic density of empty states of Ge-Si(111) epitaxial layers: Theory and experiment
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title_full	ARTICLES - Semiconductors II: Surfaces, interfaces, microstructures, and related topics - Electronic density of empty states of Ge-Si(111) epitaxial layers: Theory and experiment
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title_sort	articles - semiconductors ii: surfaces, interfaces, microstructures, and related topics - electronic density of empty states of ge-si(111) epitaxial layers: theory and experiment
title_auth	ARTICLES - Semiconductors II: Surfaces, interfaces, microstructures, and related topics - Electronic density of empty states of Ge-Si(111) epitaxial layers: Theory and experiment
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title_short	ARTICLES - Semiconductors II: Surfaces, interfaces, microstructures, and related topics - Electronic density of empty states of Ge-Si(111) epitaxial layers: Theory and experiment
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author2	Gunnella, R. Crescenzi, M.De Sacchi, M. Dufour, G. Rochet, F.
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