Effect of the transient enhanced diffusion of boron on the characteristics of sub-0.1 mm n-MOSFETS

Gespeichert in:

Autor*in:	Kumashiro, S. [verfasserIn]

Format:	Artikel

Erschienen:	2000

Systematik:	VA 5950.

Umfang:	7

Übergeordnetes Werk:	Enthalten in: Materials science and engineering / B - Amsterdam [u.a.] : Elsevier, 1988, 71(2000), Seite 148-154
Übergeordnetes Werk:	volume:71 ; year:2000 ; pages:148-154 ; extent:7

Katalog-ID:	OLC1568286910

Internformat


LEADER	01000caa a22002652 4500
001	OLC1568286910
003	DE-627
005	20230705140158.0
007	tu
008	000301s2000 xx \|\|\|\|\| 00\| \|\|und c
028	5	2	\|a SW000229
035			\|a (DE-627)OLC1568286910
035			\|a (DE-599)GBVOLC1568286910
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
082	0	4	\|a 600 \|a 670
084			\|a VA 5950. \|q AVZ \|2 rvk
100	1		\|a Kumashiro, S. \|e verfasserin \|4 aut
245	1	0	\|a Effect of the transient enhanced diffusion of boron on the characteristics of sub-0.1 mm n-MOSFETS
264		1	\|c 2000
300			\|a 7
336			\|a Text \|b txt \|2 rdacontent
337			\|a ohne Hilfsmittel zu benutzen \|b n \|2 rdamedia
338			\|a Band \|b nc \|2 rdacarrier
773	0	8	\|i Enthalten in \|t Materials science and engineering / B \|d Amsterdam [u.a.] : Elsevier, 1988 \|g 71(2000), Seite 148-154 \|w (DE-627)129622400 \|w (DE-600)246774-4 \|w (DE-576)01814151X \|x 0921-5107 \|7 nnns
773	1	8	\|g volume:71 \|g year:2000 \|g pages:148-154 \|g extent:7
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_OLC
912			\|a SSG-OLC-TEC
912			\|a GBV_ILN_11
912			\|a GBV_ILN_20
912			\|a GBV_ILN_21
912			\|a GBV_ILN_30
912			\|a GBV_ILN_31
912			\|a GBV_ILN_32
912			\|a GBV_ILN_40
912			\|a GBV_ILN_65
912			\|a GBV_ILN_70
912			\|a GBV_ILN_100
912			\|a GBV_ILN_602
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2007
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_4036
912			\|a GBV_ILN_4046
912			\|a GBV_ILN_4307
912			\|a GBV_ILN_4314
912			\|a GBV_ILN_4319
912			\|a GBV_ILN_4700
936	r	v	\|a VA 5950.
951			\|a AR
952			\|d 71 \|j 2000 \|h 148-154 \|g 7

Indexfelder

author_variant	s k sk
matchkey_str	article:09215107:2000----::fetfhtasetnacdifsoobrnnhcaatrs
hierarchy_sort_str	2000
publishDate	2000
allfields	SW000229 (DE-627)OLC1568286910 (DE-599)GBVOLC1568286910 DE-627 ger DE-627 rakwb 600 670 VA 5950. AVZ rvk Kumashiro, S. verfasserin aut Effect of the transient enhanced diffusion of boron on the characteristics of sub-0.1 mm n-MOSFETS 2000 7 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Enthalten in Materials science and engineering / B Amsterdam [u.a.] : Elsevier, 1988 71(2000), Seite 148-154 (DE-627)129622400 (DE-600)246774-4 (DE-576)01814151X 0921-5107 nnns volume:71 year:2000 pages:148-154 extent:7 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_65 GBV_ILN_70 GBV_ILN_100 GBV_ILN_602 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_4036 GBV_ILN_4046 GBV_ILN_4307 GBV_ILN_4314 GBV_ILN_4319 GBV_ILN_4700 VA 5950. AR 71 2000 148-154 7
spelling	SW000229 (DE-627)OLC1568286910 (DE-599)GBVOLC1568286910 DE-627 ger DE-627 rakwb 600 670 VA 5950. AVZ rvk Kumashiro, S. verfasserin aut Effect of the transient enhanced diffusion of boron on the characteristics of sub-0.1 mm n-MOSFETS 2000 7 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Enthalten in Materials science and engineering / B Amsterdam [u.a.] : Elsevier, 1988 71(2000), Seite 148-154 (DE-627)129622400 (DE-600)246774-4 (DE-576)01814151X 0921-5107 nnns volume:71 year:2000 pages:148-154 extent:7 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_65 GBV_ILN_70 GBV_ILN_100 GBV_ILN_602 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_4036 GBV_ILN_4046 GBV_ILN_4307 GBV_ILN_4314 GBV_ILN_4319 GBV_ILN_4700 VA 5950. AR 71 2000 148-154 7
allfields_unstemmed	SW000229 (DE-627)OLC1568286910 (DE-599)GBVOLC1568286910 DE-627 ger DE-627 rakwb 600 670 VA 5950. AVZ rvk Kumashiro, S. verfasserin aut Effect of the transient enhanced diffusion of boron on the characteristics of sub-0.1 mm n-MOSFETS 2000 7 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Enthalten in Materials science and engineering / B Amsterdam [u.a.] : Elsevier, 1988 71(2000), Seite 148-154 (DE-627)129622400 (DE-600)246774-4 (DE-576)01814151X 0921-5107 nnns volume:71 year:2000 pages:148-154 extent:7 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_65 GBV_ILN_70 GBV_ILN_100 GBV_ILN_602 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_4036 GBV_ILN_4046 GBV_ILN_4307 GBV_ILN_4314 GBV_ILN_4319 GBV_ILN_4700 VA 5950. AR 71 2000 148-154 7
allfieldsGer	SW000229 (DE-627)OLC1568286910 (DE-599)GBVOLC1568286910 DE-627 ger DE-627 rakwb 600 670 VA 5950. AVZ rvk Kumashiro, S. verfasserin aut Effect of the transient enhanced diffusion of boron on the characteristics of sub-0.1 mm n-MOSFETS 2000 7 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Enthalten in Materials science and engineering / B Amsterdam [u.a.] : Elsevier, 1988 71(2000), Seite 148-154 (DE-627)129622400 (DE-600)246774-4 (DE-576)01814151X 0921-5107 nnns volume:71 year:2000 pages:148-154 extent:7 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_65 GBV_ILN_70 GBV_ILN_100 GBV_ILN_602 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_4036 GBV_ILN_4046 GBV_ILN_4307 GBV_ILN_4314 GBV_ILN_4319 GBV_ILN_4700 VA 5950. AR 71 2000 148-154 7
allfieldsSound	SW000229 (DE-627)OLC1568286910 (DE-599)GBVOLC1568286910 DE-627 ger DE-627 rakwb 600 670 VA 5950. AVZ rvk Kumashiro, S. verfasserin aut Effect of the transient enhanced diffusion of boron on the characteristics of sub-0.1 mm n-MOSFETS 2000 7 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Enthalten in Materials science and engineering / B Amsterdam [u.a.] : Elsevier, 1988 71(2000), Seite 148-154 (DE-627)129622400 (DE-600)246774-4 (DE-576)01814151X 0921-5107 nnns volume:71 year:2000 pages:148-154 extent:7 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_65 GBV_ILN_70 GBV_ILN_100 GBV_ILN_602 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_4036 GBV_ILN_4046 GBV_ILN_4307 GBV_ILN_4314 GBV_ILN_4319 GBV_ILN_4700 VA 5950. AR 71 2000 148-154 7
source	Enthalten in Materials science and engineering / B 71(2000), Seite 148-154 volume:71 year:2000 pages:148-154 extent:7
sourceStr	Enthalten in Materials science and engineering / B 71(2000), Seite 148-154 volume:71 year:2000 pages:148-154 extent:7
format_phy_str_mv	Article
institution	findex.gbv.de
dewey-raw	600
isfreeaccess_bool	false
container_title	Materials science and engineering / B
authorswithroles_txt_mv	Kumashiro, S. @@aut@@
publishDateDaySort_date	2000-01-01T00:00:00Z
hierarchy_top_id	129622400
dewey-sort	3600
id	OLC1568286910
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC1568286910</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230705140158.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">000301s2000 xx \|\|\|\|\| 00\| \|\|und c</controlfield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">SW000229</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1568286910</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1568286910</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">600</subfield><subfield code="a">670</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">VA 5950.</subfield><subfield code="q">AVZ</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Kumashiro, S.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Effect of the transient enhanced diffusion of boron on the characteristics of sub-0.1 mm n-MOSFETS</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2000</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">7</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Materials science and engineering / B</subfield><subfield code="d">Amsterdam [u.a.] : Elsevier, 1988</subfield><subfield code="g">71(2000), Seite 148-154</subfield><subfield code="w">(DE-627)129622400</subfield><subfield code="w">(DE-600)246774-4</subfield><subfield code="w">(DE-576)01814151X</subfield><subfield code="x">0921-5107</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:71</subfield><subfield code="g">year:2000</subfield><subfield code="g">pages:148-154</subfield><subfield code="g">extent:7</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_11</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_21</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_30</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2007</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4036</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4046</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4314</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4319</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="936" ind1="r" ind2="v"><subfield code="a">VA 5950.</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">71</subfield><subfield code="j">2000</subfield><subfield code="h">148-154</subfield><subfield code="g">7</subfield></datafield></record></collection>
author	Kumashiro, S.
spellingShingle	Kumashiro, S. ddc 600 rvk VA 5950. Effect of the transient enhanced diffusion of boron on the characteristics of sub-0.1 mm n-MOSFETS
authorStr	Kumashiro, S.
ppnlink_with_tag_str_mv	@@773@@(DE-627)129622400
format	Article
dewey-ones	600 - Technology 670 - Manufacturing
delete_txt_mv	keep
author_role	aut
collection	OLC
remote_str	false
illustrated	Not Illustrated
issn	0921-5107
topic_title	600 670 VA 5950. AVZ rvk Effect of the transient enhanced diffusion of boron on the characteristics of sub-0.1 mm n-MOSFETS
topic	ddc 600 rvk VA 5950.
topic_unstemmed	ddc 600 rvk VA 5950.
topic_browse	ddc 600 rvk VA 5950.
format_facet	Aufsätze Gedruckte Aufsätze
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	nc
hierarchy_parent_title	Materials science and engineering / B
hierarchy_parent_id	129622400
dewey-tens	600 - Technology 670 - Manufacturing
hierarchy_top_title	Materials science and engineering / B
isfreeaccess_txt	false
familylinks_str_mv	(DE-627)129622400 (DE-600)246774-4 (DE-576)01814151X
title	Effect of the transient enhanced diffusion of boron on the characteristics of sub-0.1 mm n-MOSFETS
ctrlnum	(DE-627)OLC1568286910 (DE-599)GBVOLC1568286910
title_full	Effect of the transient enhanced diffusion of boron on the characteristics of sub-0.1 mm n-MOSFETS
author_sort	Kumashiro, S.
journal	Materials science and engineering / B
journalStr	Materials science and engineering / B
isOA_bool	false
dewey-hundreds	600 - Technology
recordtype	marc
publishDateSort	2000
contenttype_str_mv	txt
container_start_page	148
author_browse	Kumashiro, S.
container_volume	71
physical	7
class	600 670 VA 5950. AVZ rvk
format_se	Aufsätze
author-letter	Kumashiro, S.
dewey-full	600 670
title_sort	effect of the transient enhanced diffusion of boron on the characteristics of sub-0.1 mm n-mosfets
title_auth	Effect of the transient enhanced diffusion of boron on the characteristics of sub-0.1 mm n-MOSFETS
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_65 GBV_ILN_70 GBV_ILN_100 GBV_ILN_602 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_4036 GBV_ILN_4046 GBV_ILN_4307 GBV_ILN_4314 GBV_ILN_4319 GBV_ILN_4700
title_short	Effect of the transient enhanced diffusion of boron on the characteristics of sub-0.1 mm n-MOSFETS
remote_bool	false
ppnlink	129622400
mediatype_str_mv	n
isOA_txt	false
hochschulschrift_bool	false
up_date	2024-07-03T13:45:20.718Z
_version_	1803565736362246144
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC1568286910</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230705140158.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">000301s2000 xx \|\|\|\|\| 00\| \|\|und c</controlfield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">SW000229</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1568286910</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1568286910</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">600</subfield><subfield code="a">670</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">VA 5950.</subfield><subfield code="q">AVZ</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Kumashiro, S.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Effect of the transient enhanced diffusion of boron on the characteristics of sub-0.1 mm n-MOSFETS</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2000</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">7</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Materials science and engineering / B</subfield><subfield code="d">Amsterdam [u.a.] : Elsevier, 1988</subfield><subfield code="g">71(2000), Seite 148-154</subfield><subfield code="w">(DE-627)129622400</subfield><subfield code="w">(DE-600)246774-4</subfield><subfield code="w">(DE-576)01814151X</subfield><subfield code="x">0921-5107</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:71</subfield><subfield code="g">year:2000</subfield><subfield code="g">pages:148-154</subfield><subfield code="g">extent:7</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_11</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_21</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_30</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2007</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4036</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4046</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4314</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4319</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="936" ind1="r" ind2="v"><subfield code="a">VA 5950.</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">71</subfield><subfield code="j">2000</subfield><subfield code="h">148-154</subfield><subfield code="g">7</subfield></datafield></record></collection>
score	7.400174

Nicht das Richtige dabei?

Schreiben Sie uns!

Effect of the transient enhanced diffusion of boron on the characteristics of sub-0.1 mm n-MOSFETS

Nicht das Richtige dabei?

Zugang & Verfügbarkeit

Vorhandene Bände

Nicht das Richtige dabei?