Effects of phosphorous beam equivalent pressure on GaInAsP-GaAs grown by solid source molecular beam epitaxy with a valve phosphorous cracker cell

Gespeichert in:

Autor*in:	Wang, X.Z. [verfasserIn] Zhang, D.H. Zheng, H.Q. Yoon, S.F. Kam, C.H. Shi, W. Raman, A.

Format:	Artikel

Erschienen:	2000

Umfang:	5

Übergeordnetes Werk:	Enthalten in: Journal of crystal growth - Amsterdam [u.a.] : Elsevier, 1967, 210(2000), 4, Seite 458-462
Übergeordnetes Werk:	volume:210 ; year:2000 ; number:4 ; pages:458-462 ; extent:5

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Effects of phosphorous beam equivalent pressure on GaInAsP-GaAs grown by solid source molecular beam epitaxy with a valve phosphorous cracker cell

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