ARTICLES - Semiconductors II: Surfaces, interfaces, microstructures, and related topics - Tellurium desorption kinetics from (112) Si: Si-Te binding energy

Gespeichert in:

Autor*in:	Dhar, N.K. [verfasserIn] Goldsman, N. Wood, C.E.C.

Format:	Artikel

Erschienen:	2000

Systematik:	UA 6500.

Umfang:	6

Übergeordnetes Werk:	Enthalten in: Physical review / B - Ridge, NY : APS, 1970, 61(2000), 12, Seite 8256-8261
Übergeordnetes Werk:	volume:61 ; year:2000 ; number:12 ; pages:8256-8261 ; extent:6

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title_sort	articles - semiconductors ii: surfaces, interfaces, microstructures, and related topics - tellurium desorption kinetics from (112) si: si-te binding energy
title_auth	ARTICLES - Semiconductors II: Surfaces, interfaces, microstructures, and related topics - Tellurium desorption kinetics from (112) Si: Si-Te binding energy
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title_short	ARTICLES - Semiconductors II: Surfaces, interfaces, microstructures, and related topics - Tellurium desorption kinetics from (112) Si: Si-Te binding energy
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author2	Goldsman, N. Wood, C.E.C.
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