Effect of traps in the transition Si-SiO2 layer on input characteristics of SOI transistors

Gespeichert in:

Autor*in:	Lysenko, V.S. [verfasserIn] Tyagulski, I.P. Gomeniuk, Y.V. Osiyuk, I.N.

Format:	Artikel

Erschienen:	2000

Umfang:	4

Übergeordnetes Werk:	Enthalten in: Microelectronics reliability - Amsterdam [u.a.] : Elsevier, 1964, 40(2000), 4, Seite 799-802
Übergeordnetes Werk:	volume:40 ; year:2000 ; number:4 ; pages:799-802 ; extent:4

Katalog-ID:	OLC1572343540

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allfields	SW000523 (DE-627)OLC1572343540 (DE-599)GBVOLC1572343540 DE-627 ger DE-627 rakwb 620 53.55 bkl 53.52 bkl 50.16 bkl Lysenko, V.S. verfasserin aut Effect of traps in the transition Si-SiO2 layer on input characteristics of SOI transistors 2000 4 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Tyagulski, I.P. oth Gomeniuk, Y.V. oth Osiyuk, I.N. oth Enthalten in Microelectronics reliability Amsterdam [u.a.] : Elsevier, 1964 40(2000), 4, Seite 799-802 (DE-627)129596949 (DE-600)240853-3 (DE-576)015090116 0026-2714 nnns volume:40 year:2000 number:4 pages:799-802 extent:4 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_136 GBV_ILN_2006 GBV_ILN_2021 GBV_ILN_4046 GBV_ILN_4309 GBV_ILN_4700 53.55 AVZ 53.52 AVZ 50.16 AVZ AR 40 2000 4 799-802 4
spelling	SW000523 (DE-627)OLC1572343540 (DE-599)GBVOLC1572343540 DE-627 ger DE-627 rakwb 620 53.55 bkl 53.52 bkl 50.16 bkl Lysenko, V.S. verfasserin aut Effect of traps in the transition Si-SiO2 layer on input characteristics of SOI transistors 2000 4 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Tyagulski, I.P. oth Gomeniuk, Y.V. oth Osiyuk, I.N. oth Enthalten in Microelectronics reliability Amsterdam [u.a.] : Elsevier, 1964 40(2000), 4, Seite 799-802 (DE-627)129596949 (DE-600)240853-3 (DE-576)015090116 0026-2714 nnns volume:40 year:2000 number:4 pages:799-802 extent:4 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_136 GBV_ILN_2006 GBV_ILN_2021 GBV_ILN_4046 GBV_ILN_4309 GBV_ILN_4700 53.55 AVZ 53.52 AVZ 50.16 AVZ AR 40 2000 4 799-802 4
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allfieldsGer	SW000523 (DE-627)OLC1572343540 (DE-599)GBVOLC1572343540 DE-627 ger DE-627 rakwb 620 53.55 bkl 53.52 bkl 50.16 bkl Lysenko, V.S. verfasserin aut Effect of traps in the transition Si-SiO2 layer on input characteristics of SOI transistors 2000 4 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Tyagulski, I.P. oth Gomeniuk, Y.V. oth Osiyuk, I.N. oth Enthalten in Microelectronics reliability Amsterdam [u.a.] : Elsevier, 1964 40(2000), 4, Seite 799-802 (DE-627)129596949 (DE-600)240853-3 (DE-576)015090116 0026-2714 nnns volume:40 year:2000 number:4 pages:799-802 extent:4 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_136 GBV_ILN_2006 GBV_ILN_2021 GBV_ILN_4046 GBV_ILN_4309 GBV_ILN_4700 53.55 AVZ 53.52 AVZ 50.16 AVZ AR 40 2000 4 799-802 4
allfieldsSound	SW000523 (DE-627)OLC1572343540 (DE-599)GBVOLC1572343540 DE-627 ger DE-627 rakwb 620 53.55 bkl 53.52 bkl 50.16 bkl Lysenko, V.S. verfasserin aut Effect of traps in the transition Si-SiO2 layer on input characteristics of SOI transistors 2000 4 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Tyagulski, I.P. oth Gomeniuk, Y.V. oth Osiyuk, I.N. oth Enthalten in Microelectronics reliability Amsterdam [u.a.] : Elsevier, 1964 40(2000), 4, Seite 799-802 (DE-627)129596949 (DE-600)240853-3 (DE-576)015090116 0026-2714 nnns volume:40 year:2000 number:4 pages:799-802 extent:4 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_136 GBV_ILN_2006 GBV_ILN_2021 GBV_ILN_4046 GBV_ILN_4309 GBV_ILN_4700 53.55 AVZ 53.52 AVZ 50.16 AVZ AR 40 2000 4 799-802 4
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title_short	Effect of traps in the transition Si-SiO2 layer on input characteristics of SOI transistors
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