Effect of traps in the transition Si-SiO2 layer on input characteristics of SOI transistors
Autor*in: |
Lysenko, V.S. [verfasserIn] |
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Format: |
Artikel |
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Erschienen: |
2000 |
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Umfang: |
4 |
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Übergeordnetes Werk: |
Enthalten in: Microelectronics reliability - Amsterdam [u.a.] : Elsevier, 1964, 40(2000), 4, Seite 799-802 |
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Übergeordnetes Werk: |
volume:40 ; year:2000 ; number:4 ; pages:799-802 ; extent:4 |
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SW000523 (DE-627)OLC1572343540 (DE-599)GBVOLC1572343540 DE-627 ger DE-627 rakwb 620 53.55 bkl 53.52 bkl 50.16 bkl Lysenko, V.S. verfasserin aut Effect of traps in the transition Si-SiO2 layer on input characteristics of SOI transistors 2000 4 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Tyagulski, I.P. oth Gomeniuk, Y.V. oth Osiyuk, I.N. oth Enthalten in Microelectronics reliability Amsterdam [u.a.] : Elsevier, 1964 40(2000), 4, Seite 799-802 (DE-627)129596949 (DE-600)240853-3 (DE-576)015090116 0026-2714 nnns volume:40 year:2000 number:4 pages:799-802 extent:4 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_136 GBV_ILN_2006 GBV_ILN_2021 GBV_ILN_4046 GBV_ILN_4309 GBV_ILN_4700 53.55 AVZ 53.52 AVZ 50.16 AVZ AR 40 2000 4 799-802 4 |
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SW000523 (DE-627)OLC1572343540 (DE-599)GBVOLC1572343540 DE-627 ger DE-627 rakwb 620 53.55 bkl 53.52 bkl 50.16 bkl Lysenko, V.S. verfasserin aut Effect of traps in the transition Si-SiO2 layer on input characteristics of SOI transistors 2000 4 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Tyagulski, I.P. oth Gomeniuk, Y.V. oth Osiyuk, I.N. oth Enthalten in Microelectronics reliability Amsterdam [u.a.] : Elsevier, 1964 40(2000), 4, Seite 799-802 (DE-627)129596949 (DE-600)240853-3 (DE-576)015090116 0026-2714 nnns volume:40 year:2000 number:4 pages:799-802 extent:4 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_136 GBV_ILN_2006 GBV_ILN_2021 GBV_ILN_4046 GBV_ILN_4309 GBV_ILN_4700 53.55 AVZ 53.52 AVZ 50.16 AVZ AR 40 2000 4 799-802 4 |
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allfieldsSound |
SW000523 (DE-627)OLC1572343540 (DE-599)GBVOLC1572343540 DE-627 ger DE-627 rakwb 620 53.55 bkl 53.52 bkl 50.16 bkl Lysenko, V.S. verfasserin aut Effect of traps in the transition Si-SiO2 layer on input characteristics of SOI transistors 2000 4 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Tyagulski, I.P. oth Gomeniuk, Y.V. oth Osiyuk, I.N. oth Enthalten in Microelectronics reliability Amsterdam [u.a.] : Elsevier, 1964 40(2000), 4, Seite 799-802 (DE-627)129596949 (DE-600)240853-3 (DE-576)015090116 0026-2714 nnns volume:40 year:2000 number:4 pages:799-802 extent:4 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_21 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_136 GBV_ILN_2006 GBV_ILN_2021 GBV_ILN_4046 GBV_ILN_4309 GBV_ILN_4700 53.55 AVZ 53.52 AVZ 50.16 AVZ AR 40 2000 4 799-802 4 |
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