Condensed Matter: Electronic Properties, etc - Density of States of Amorphous GdxSi1-x at the Metal-Insulator Transition

Gespeichert in:

Autor*in:	Teizer, W. [verfasserIn] Hellman, F. Dynes, R.C.

Format:	Artikel

Erschienen:	2000

Systematik:	UA 1000

Umfang:	4

Übergeordnetes Werk:	Enthalten in: Physical review letters - Ridge, NY : American Physical Society, 1958, 85(2000), 4, Seite 848-851
Übergeordnetes Werk:	volume:85 ; year:2000 ; number:4 ; pages:848-851 ; extent:4

Katalog-ID:	OLC1576104214

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title_sort	condensed matter: electronic properties, etc - density of states of amorphous gdxsi1-x at the metal-insulator transition
title_auth	Condensed Matter: Electronic Properties, etc - Density of States of Amorphous GdxSi1-x at the Metal-Insulator Transition
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container_issue	4
title_short	Condensed Matter: Electronic Properties, etc - Density of States of Amorphous GdxSi1-x at the Metal-Insulator Transition
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author2	Hellman, F. Dynes, R.C.
author2Str	Hellman, F. Dynes, R.C.
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up_date	2024-07-03T19:33:48.513Z
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