ELECTRONIC TRANSPORT AND SEMICONDUCTORS - Effect of oxidation method and post-oxidation annealing on interface properties of metal-oxide-semiconductor structures formed on n-type 4H-SiC C(0001) face

Gespeichert in:

Autor*in:	Fukuda, K. [verfasserIn] Cho, W.J. Arai, K. Suzuki, S. Senzaki, J. Tanaka, T.

Format:	Artikel

Erschienen:	2000

Umfang:	3

Übergeordnetes Werk:	Enthalten in: Applied physics letters - Melville, NY : AIP, 1962, 77(2000), 6, Seite 866-868
Übergeordnetes Werk:	volume:77 ; year:2000 ; number:6 ; pages:866-868 ; extent:3

Katalog-ID:	OLC1576657213

Internformat


LEADER	01000caa a22002652 4500
001	OLC1576657213
003	DE-627
005	20210630181822.0
007	tu
008	000821s2000 xx \|\|\|\|\| 00\| \|\|und c
028	5	2	\|a SW000821
035			\|a (DE-627)OLC1576657213
035			\|a (DE-599)GBVOLC1576657213
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
082	0	4	\|a 530
100	1		\|a Fukuda, K. \|e verfasserin \|4 aut
245	1	0	\|a ELECTRONIC TRANSPORT AND SEMICONDUCTORS - Effect of oxidation method and post-oxidation annealing on interface properties of metal-oxide-semiconductor structures formed on n-type 4H-SiC C(0001) face
264		1	\|c 2000
300			\|a 3
336			\|a Text \|b txt \|2 rdacontent
337			\|a ohne Hilfsmittel zu benutzen \|b n \|2 rdamedia
338			\|a Band \|b nc \|2 rdacarrier
700	1		\|a Cho, W.J. \|4 oth
700	1		\|a Arai, K. \|4 oth
700	1		\|a Suzuki, S. \|4 oth
700	1		\|a Senzaki, J. \|4 oth
700	1		\|a Tanaka, T. \|4 oth
773	0	8	\|i Enthalten in \|t Applied physics letters \|d Melville, NY : AIP, 1962 \|g 77(2000), 6, Seite 866-868 \|w (DE-627)12951568X \|w (DE-600)211245-0 \|w (DE-576)014926210 \|x 0003-6951 \|7 nnns
773	1	8	\|g volume:77 \|g year:2000 \|g number:6 \|g pages:866-868 \|g extent:3
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_OLC
912			\|a SSG-OLC-PHY
912			\|a GBV_ILN_11
912			\|a GBV_ILN_20
912			\|a GBV_ILN_21
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_30
912			\|a GBV_ILN_31
912			\|a GBV_ILN_32
912			\|a GBV_ILN_40
912			\|a GBV_ILN_55
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_70
912			\|a GBV_ILN_130
912			\|a GBV_ILN_150
912			\|a GBV_ILN_170
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2006
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2192
912			\|a GBV_ILN_2279
912			\|a GBV_ILN_2409
912			\|a GBV_ILN_4036
912			\|a GBV_ILN_4082
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
912			\|a GBV_ILN_4310
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4315
912			\|a GBV_ILN_4319
912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4700
951			\|a AR
952			\|d 77 \|j 2000 \|e 6 \|h 866-868 \|g 3

Indexfelder

author_variant	k f kf
matchkey_str	article:00036951:2000----::lcrncrnpradeiodcosfetfxdtomtoadotxdtoanaignnefcpoeteomtlxdsmc
hierarchy_sort_str	2000
publishDate	2000
allfields	SW000821 (DE-627)OLC1576657213 (DE-599)GBVOLC1576657213 DE-627 ger DE-627 rakwb 530 Fukuda, K. verfasserin aut ELECTRONIC TRANSPORT AND SEMICONDUCTORS - Effect of oxidation method and post-oxidation annealing on interface properties of metal-oxide-semiconductor structures formed on n-type 4H-SiC C(0001) face 2000 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Cho, W.J. oth Arai, K. oth Suzuki, S. oth Senzaki, J. oth Tanaka, T. oth Enthalten in Applied physics letters Melville, NY : AIP, 1962 77(2000), 6, Seite 866-868 (DE-627)12951568X (DE-600)211245-0 (DE-576)014926210 0003-6951 nnns volume:77 year:2000 number:6 pages:866-868 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_55 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2192 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4036 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 77 2000 6 866-868 3
spelling	SW000821 (DE-627)OLC1576657213 (DE-599)GBVOLC1576657213 DE-627 ger DE-627 rakwb 530 Fukuda, K. verfasserin aut ELECTRONIC TRANSPORT AND SEMICONDUCTORS - Effect of oxidation method and post-oxidation annealing on interface properties of metal-oxide-semiconductor structures formed on n-type 4H-SiC C(0001) face 2000 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Cho, W.J. oth Arai, K. oth Suzuki, S. oth Senzaki, J. oth Tanaka, T. oth Enthalten in Applied physics letters Melville, NY : AIP, 1962 77(2000), 6, Seite 866-868 (DE-627)12951568X (DE-600)211245-0 (DE-576)014926210 0003-6951 nnns volume:77 year:2000 number:6 pages:866-868 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_55 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2192 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4036 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 77 2000 6 866-868 3
allfields_unstemmed	SW000821 (DE-627)OLC1576657213 (DE-599)GBVOLC1576657213 DE-627 ger DE-627 rakwb 530 Fukuda, K. verfasserin aut ELECTRONIC TRANSPORT AND SEMICONDUCTORS - Effect of oxidation method and post-oxidation annealing on interface properties of metal-oxide-semiconductor structures formed on n-type 4H-SiC C(0001) face 2000 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Cho, W.J. oth Arai, K. oth Suzuki, S. oth Senzaki, J. oth Tanaka, T. oth Enthalten in Applied physics letters Melville, NY : AIP, 1962 77(2000), 6, Seite 866-868 (DE-627)12951568X (DE-600)211245-0 (DE-576)014926210 0003-6951 nnns volume:77 year:2000 number:6 pages:866-868 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_55 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2192 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4036 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 77 2000 6 866-868 3
allfieldsGer	SW000821 (DE-627)OLC1576657213 (DE-599)GBVOLC1576657213 DE-627 ger DE-627 rakwb 530 Fukuda, K. verfasserin aut ELECTRONIC TRANSPORT AND SEMICONDUCTORS - Effect of oxidation method and post-oxidation annealing on interface properties of metal-oxide-semiconductor structures formed on n-type 4H-SiC C(0001) face 2000 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Cho, W.J. oth Arai, K. oth Suzuki, S. oth Senzaki, J. oth Tanaka, T. oth Enthalten in Applied physics letters Melville, NY : AIP, 1962 77(2000), 6, Seite 866-868 (DE-627)12951568X (DE-600)211245-0 (DE-576)014926210 0003-6951 nnns volume:77 year:2000 number:6 pages:866-868 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_55 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2192 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4036 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 77 2000 6 866-868 3
allfieldsSound	SW000821 (DE-627)OLC1576657213 (DE-599)GBVOLC1576657213 DE-627 ger DE-627 rakwb 530 Fukuda, K. verfasserin aut ELECTRONIC TRANSPORT AND SEMICONDUCTORS - Effect of oxidation method and post-oxidation annealing on interface properties of metal-oxide-semiconductor structures formed on n-type 4H-SiC C(0001) face 2000 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Cho, W.J. oth Arai, K. oth Suzuki, S. oth Senzaki, J. oth Tanaka, T. oth Enthalten in Applied physics letters Melville, NY : AIP, 1962 77(2000), 6, Seite 866-868 (DE-627)12951568X (DE-600)211245-0 (DE-576)014926210 0003-6951 nnns volume:77 year:2000 number:6 pages:866-868 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_55 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2192 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4036 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 77 2000 6 866-868 3
source	Enthalten in Applied physics letters 77(2000), 6, Seite 866-868 volume:77 year:2000 number:6 pages:866-868 extent:3
sourceStr	Enthalten in Applied physics letters 77(2000), 6, Seite 866-868 volume:77 year:2000 number:6 pages:866-868 extent:3
format_phy_str_mv	Article
institution	findex.gbv.de
dewey-raw	530
isfreeaccess_bool	false
container_title	Applied physics letters
authorswithroles_txt_mv	Fukuda, K. @@aut@@ Cho, W.J. @@oth@@ Arai, K. @@oth@@ Suzuki, S. @@oth@@ Senzaki, J. @@oth@@ Tanaka, T. @@oth@@
publishDateDaySort_date	2000-01-01T00:00:00Z
hierarchy_top_id	12951568X
dewey-sort	3530
id	OLC1576657213
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC1576657213</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20210630181822.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">000821s2000 xx \|\|\|\|\| 00\| \|\|und c</controlfield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">SW000821</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1576657213</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1576657213</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Fukuda, K.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">ELECTRONIC TRANSPORT AND SEMICONDUCTORS - Effect of oxidation method and post-oxidation annealing on interface properties of metal-oxide-semiconductor structures formed on n-type 4H-SiC C(0001) face</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2000</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">3</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Cho, W.J.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Arai, K.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Suzuki, S.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Senzaki, J.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Tanaka, T.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Applied physics letters</subfield><subfield code="d">Melville, NY : AIP, 1962</subfield><subfield code="g">77(2000), 6, Seite 866-868</subfield><subfield code="w">(DE-627)12951568X</subfield><subfield code="w">(DE-600)211245-0</subfield><subfield code="w">(DE-576)014926210</subfield><subfield code="x">0003-6951</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:77</subfield><subfield code="g">year:2000</subfield><subfield code="g">number:6</subfield><subfield code="g">pages:866-868</subfield><subfield code="g">extent:3</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_11</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_21</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_30</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_55</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_130</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2192</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2279</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2409</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4036</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4082</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4310</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4315</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4319</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">77</subfield><subfield code="j">2000</subfield><subfield code="e">6</subfield><subfield code="h">866-868</subfield><subfield code="g">3</subfield></datafield></record></collection>
author	Fukuda, K.
spellingShingle	Fukuda, K. ddc 530 ELECTRONIC TRANSPORT AND SEMICONDUCTORS - Effect of oxidation method and post-oxidation annealing on interface properties of metal-oxide-semiconductor structures formed on n-type 4H-SiC C(0001) face
authorStr	Fukuda, K.
ppnlink_with_tag_str_mv	@@773@@(DE-627)12951568X
format	Article
dewey-ones	530 - Physics
delete_txt_mv	keep
author_role	aut
collection	OLC
remote_str	false
illustrated	Not Illustrated
issn	0003-6951
topic_title	530 ELECTRONIC TRANSPORT AND SEMICONDUCTORS - Effect of oxidation method and post-oxidation annealing on interface properties of metal-oxide-semiconductor structures formed on n-type 4H-SiC C(0001) face
topic	ddc 530
topic_unstemmed	ddc 530
topic_browse	ddc 530
format_facet	Aufsätze Gedruckte Aufsätze
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	nc
author2_variant	w c wc k a ka s s ss j s js t t tt
hierarchy_parent_title	Applied physics letters
hierarchy_parent_id	12951568X
dewey-tens	530 - Physics
hierarchy_top_title	Applied physics letters
isfreeaccess_txt	false
familylinks_str_mv	(DE-627)12951568X (DE-600)211245-0 (DE-576)014926210
title	ELECTRONIC TRANSPORT AND SEMICONDUCTORS - Effect of oxidation method and post-oxidation annealing on interface properties of metal-oxide-semiconductor structures formed on n-type 4H-SiC C(0001) face
ctrlnum	(DE-627)OLC1576657213 (DE-599)GBVOLC1576657213
title_full	ELECTRONIC TRANSPORT AND SEMICONDUCTORS - Effect of oxidation method and post-oxidation annealing on interface properties of metal-oxide-semiconductor structures formed on n-type 4H-SiC C(0001) face
author_sort	Fukuda, K.
journal	Applied physics letters
journalStr	Applied physics letters
isOA_bool	false
dewey-hundreds	500 - Science
recordtype	marc
publishDateSort	2000
contenttype_str_mv	txt
container_start_page	866
author_browse	Fukuda, K.
container_volume	77
physical	3
class	530
format_se	Aufsätze
author-letter	Fukuda, K.
dewey-full	530
title_sort	electronic transport and semiconductors - effect of oxidation method and post-oxidation annealing on interface properties of metal-oxide-semiconductor structures formed on n-type 4h-sic c(0001) face
title_auth	ELECTRONIC TRANSPORT AND SEMICONDUCTORS - Effect of oxidation method and post-oxidation annealing on interface properties of metal-oxide-semiconductor structures formed on n-type 4H-SiC C(0001) face
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_55 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2192 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4036 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700
container_issue	6
title_short	ELECTRONIC TRANSPORT AND SEMICONDUCTORS - Effect of oxidation method and post-oxidation annealing on interface properties of metal-oxide-semiconductor structures formed on n-type 4H-SiC C(0001) face
remote_bool	false
author2	Cho, W.J. Arai, K. Suzuki, S. Senzaki, J. Tanaka, T.
author2Str	Cho, W.J. Arai, K. Suzuki, S. Senzaki, J. Tanaka, T.
ppnlink	12951568X
mediatype_str_mv	n
isOA_txt	false
hochschulschrift_bool	false
author2_role	oth oth oth oth oth
up_date	2024-07-03T20:49:53.479Z
_version_	1803592446488084480
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC1576657213</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20210630181822.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">000821s2000 xx \|\|\|\|\| 00\| \|\|und c</controlfield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">SW000821</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1576657213</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1576657213</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Fukuda, K.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">ELECTRONIC TRANSPORT AND SEMICONDUCTORS - Effect of oxidation method and post-oxidation annealing on interface properties of metal-oxide-semiconductor structures formed on n-type 4H-SiC C(0001) face</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2000</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">3</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Cho, W.J.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Arai, K.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Suzuki, S.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Senzaki, J.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Tanaka, T.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Applied physics letters</subfield><subfield code="d">Melville, NY : AIP, 1962</subfield><subfield code="g">77(2000), 6, Seite 866-868</subfield><subfield code="w">(DE-627)12951568X</subfield><subfield code="w">(DE-600)211245-0</subfield><subfield code="w">(DE-576)014926210</subfield><subfield code="x">0003-6951</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:77</subfield><subfield code="g">year:2000</subfield><subfield code="g">number:6</subfield><subfield code="g">pages:866-868</subfield><subfield code="g">extent:3</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_11</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_21</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_30</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_55</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_130</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2192</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2279</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2409</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4036</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4082</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4310</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4315</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4319</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">77</subfield><subfield code="j">2000</subfield><subfield code="e">6</subfield><subfield code="h">866-868</subfield><subfield code="g">3</subfield></datafield></record></collection>
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ELECTRONIC TRANSPORT AND SEMICONDUCTORS - Effect of oxidation method and post-oxidation annealing on interface properties of metal-oxide-semiconductor structures formed on n-type 4H-SiC C(0001) face

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