Epitaxial Growth of Single-Crystal Ultrathin Films of Bismuth on Si(111)

Gespeichert in:

Autor*in:	Nagao, Tadaaki [verfasserIn] Doi, Takumi Sekiguchi, Takeharu Hasegawa, Shuji

Format:	Artikel

Erschienen:	2000

Systematik:	UA 4210.

Umfang:	4

Übergeordnetes Werk:	Enthalten in: Japanese journal of applied physics. Part 1, Regular papers, brief communications & review papers - Tokyo : Ōyō Butsuri Gakkai, 1982, 39(2000), 7, B, Seite 4567-4570
Übergeordnetes Werk:	volume:39 ; year:2000 ; number:7 ; supplement:B ; pages:4567-4570 ; extent:4

Katalog-ID:	OLC157882494X

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Epitaxial Growth of Single-Crystal Ultrathin Films of Bismuth on Si(111)

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